JPWO2013080550A1 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
- Publication number
- JPWO2013080550A1 JPWO2013080550A1 JP2013546999A JP2013546999A JPWO2013080550A1 JP WO2013080550 A1 JPWO2013080550 A1 JP WO2013080550A1 JP 2013546999 A JP2013546999 A JP 2013546999A JP 2013546999 A JP2013546999 A JP 2013546999A JP WO2013080550 A1 JPWO2013080550 A1 JP WO2013080550A1
- Authority
- JP
- Japan
- Prior art keywords
- glass plate
- solar cell
- front glass
- cell module
- back glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 198
- 239000000945 filler Substances 0.000 claims abstract description 39
- 230000002093 peripheral effect Effects 0.000 claims abstract description 38
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005042 ethylene-ethyl acrylate Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10165—Functional features of the laminated safety glass or glazing
- B32B17/10293—Edge features, e.g. inserts or holes
- B32B17/10302—Edge sealing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
Description
図1は、第1の実施の形態に係る太陽電池モジュールを受光面側から見た平面図である。図2は、図1に示す端子ボックス近傍のA−A断面図である。
次に、表面ガラス板12と裏面ガラス板14とを溶融接合する方法について説明する。
はじめに、光起電力装置16、第1集電配線22、第2集電配線24および絶縁被覆材28などが設けられている表面ガラス板12を準備する。その状態で、光起電力装置16を覆うように充填材30を配置する。ここで、充填材30が例えばシート状のエチレン酢酸ビニル(EVA)の場合、その大きさは、太陽電池モジュール10の完成時に、充填材30と接合領域R1との間に空隙38が形成される程度に設定されている。換言すれば、シート状の充填材30の場合、表面ガラス板12または裏面ガラス板14の周縁部R2よりも4辺が小さい四角形である。
図6は、第2の実施の形態に係る太陽電池モジュールの構造を示す断面図である。
受光側に配置された表面ガラス板と、
前記表面ガラス板と対向するように設けられた裏面ガラス板と、
前記表面ガラス板と前記裏面ガラス板との間に設けられている光起電力装置と、
前記表面ガラス板と前記裏面ガラス板との間に充填されている充填材と、を備え、
前記表面ガラス板および前記裏面ガラス板は、周縁部において溶融接合された接合部を有し、
前記充填材の外周部と前記接合部との間に空隙が形成されている。
Claims (5)
- 受光側に配置された表面ガラス板と、
前記表面ガラス板と対向するように設けられた裏面ガラス板と、
前記表面ガラス板と前記裏面ガラス板との間に設けられている光起電力装置と、
前記表面ガラス板と前記裏面ガラス板との間に充填されている充填材と、を備え、
前記表面ガラス板および前記裏面ガラス板は、周縁部において溶融接合された接合部を有し、
前記充填材の外周部と前記接合部との間に空隙が形成されている、
ことを特徴とする太陽電池モジュール。 - 前記接合部は、前記表面ガラス板および裏面ガラス板の外縁の全周にわたって形成されていることを特徴とする請求項1に記載の太陽電池モジュール。
- 前記接合部は、前記裏面ガラス板と前記表面ガラス板とが直接溶融接合されて形成されていることを特徴とする請求項1または2に記載の太陽電池モジュール。
- 前記表面ガラス板または前記裏面ガラス板の少なくとも一方は、撓んだ状態で前記接合部において溶融接合されていることを特徴とする請求項1乃至3のいずれか1項に記載の太陽電池モジュール。
- 前記表面ガラス板の周縁部に、前記裏面ガラス板と対向するように配置されたスペーサ部材を更に備え、
前記接合部は、前記表面ガラス板または前記裏面ガラス板の少なくとも一方の周縁部と前記スペーサ部材とが溶融接合されて形成されていることを特徴とする請求項1または2に記載の太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011262359 | 2011-11-30 | ||
JP2011262359 | 2011-11-30 | ||
PCT/JP2012/007666 WO2013080550A1 (ja) | 2011-11-30 | 2012-11-29 | 太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013080550A1 true JPWO2013080550A1 (ja) | 2015-04-27 |
JP6025123B2 JP6025123B2 (ja) | 2016-11-16 |
Family
ID=48535039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013546999A Expired - Fee Related JP6025123B2 (ja) | 2011-11-30 | 2012-11-29 | 太陽電池モジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US20140261684A1 (ja) |
JP (1) | JP6025123B2 (ja) |
WO (1) | WO2013080550A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012012745A2 (en) * | 2010-07-22 | 2012-01-26 | Ferro Corporation | Hermetically sealed electronic device using solder bonding |
JP7311010B2 (ja) | 2018-09-07 | 2023-07-19 | 株式会社プロテリアル | フェライト磁心 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007048674A (ja) * | 2005-08-11 | 2007-02-22 | Ngk Spark Plug Co Ltd | 色素増感型太陽電池及びその封止方法 |
JP2010228998A (ja) * | 2009-03-27 | 2010-10-14 | Asahi Glass Co Ltd | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 |
JP2012084658A (ja) * | 2010-10-08 | 2012-04-26 | Asahi Glass Co Ltd | 太陽電池モジュールの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4076742B2 (ja) * | 2001-07-13 | 2008-04-16 | シャープ株式会社 | 太陽電池モジュール |
TWI482745B (zh) * | 2008-11-26 | 2015-05-01 | Asahi Glass Co Ltd | A glass member having a sealing material layer, and an electronic device using the same, and a method of manufacturing the same |
KR101097252B1 (ko) * | 2009-11-17 | 2011-12-21 | 삼성에스디아이 주식회사 | 광전변환소자 |
US20130048055A1 (en) * | 2011-08-25 | 2013-02-28 | Primestar Solar, Inc. | Sealing layer for thin film photovoltaic devices and their methods of manufacture |
-
2012
- 2012-11-29 JP JP2013546999A patent/JP6025123B2/ja not_active Expired - Fee Related
- 2012-11-29 WO PCT/JP2012/007666 patent/WO2013080550A1/ja active Application Filing
-
2014
- 2014-05-28 US US14/289,287 patent/US20140261684A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007048674A (ja) * | 2005-08-11 | 2007-02-22 | Ngk Spark Plug Co Ltd | 色素増感型太陽電池及びその封止方法 |
JP2010228998A (ja) * | 2009-03-27 | 2010-10-14 | Asahi Glass Co Ltd | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 |
JP2012084658A (ja) * | 2010-10-08 | 2012-04-26 | Asahi Glass Co Ltd | 太陽電池モジュールの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6025123B2 (ja) | 2016-11-16 |
WO2013080550A1 (ja) | 2013-06-06 |
US20140261684A1 (en) | 2014-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4294048B2 (ja) | 太陽電池モジュール | |
US20150194552A1 (en) | Solar cell module and method for manufacturing the solar cell module | |
JP5879513B2 (ja) | 太陽電池モジュール | |
JP2017055117A (ja) | 太陽電池モジュール及びその製造方法 | |
JP2010041012A (ja) | 太陽電池モジュール | |
JP5642355B2 (ja) | 太陽電池モジュール | |
JP2013048272A (ja) | 光電変換装置及びその製造方法 | |
JP2010251667A (ja) | 太陽電池 | |
US20170373210A1 (en) | Solar cell module | |
JPWO2020054130A1 (ja) | 太陽電池モジュール | |
JP6656225B2 (ja) | 太陽電池およびその製造方法、ならびに太陽電池モジュール | |
JP2008010857A (ja) | 太陽電池モジュール | |
JPH07142756A (ja) | 太陽電池モジュール及びその製造方法 | |
US20170194525A1 (en) | High power solar cell module | |
WO2010150675A1 (ja) | 太陽電池モジュールおよび太陽電池モジュールの製造方法 | |
WO2013179530A1 (ja) | 光電変換装置 | |
JP6025123B2 (ja) | 太陽電池モジュール | |
JP5153279B2 (ja) | 太陽電池モジュール | |
JP2006278695A (ja) | 太陽電池モジュール | |
WO2013031199A1 (ja) | 太陽電池モジュール | |
JPWO2015194146A1 (ja) | 太陽電池モジュール | |
JP4969337B2 (ja) | 光電変換装置 | |
JP2010182851A (ja) | 太陽電池モジュール | |
WO2011114781A1 (ja) | 光電変換装置およびその製造方法 | |
WO2012023260A1 (ja) | 光電変換装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151021 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160818 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160913 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161003 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6025123 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |