JPWO2012124057A1 - Semiconductor light emitting device inspection equipment - Google Patents

Abstract

An object of the present invention is to provide a semiconductor light emitting element inspection apparatus capable of measuring the light emission state of a semiconductor light emitting element at high speed and inspecting the semiconductor light emitting element based on the measurement result. The semiconductor light-emitting element inspection apparatus 3 is an LED 101 inspection apparatus 3 that inspects the light emission state emitted from the LED 101, is disposed on the light emission central axis of the LED 101, faces the LED 101, and is emitted from the LED 101. CCD 105 that can receive light and measure the received light reception status at each of a plurality of points, a reflection unit 123 that reflects light emitted from LED 101 and guides it to CCD 105, and a light reception status at each of the plurality of points obtained by CCD 105 In order to compare with the received light information, a storage unit 161 that stores reference information serving as a reference for comparison, and a tester 151 that performs a comparison inspection between the reference information and the received light information are provided.

Description

  The present invention relates to a semiconductor light-emitting element inspection apparatus that receives light from a semiconductor light-emitting element such as an LED and inspects the semiconductor light-emitting element from the light emission state.

Patent Document 1 and Patent Document 2 disclose a technique of measuring one place at a time in order to measure a distribution of light distribution intensity (light distribution intensity distribution), which is an intensity of light according to an angle from a light emission central axis. Has been.
Patent Document 3 discloses a technique for simultaneously measuring a plurality of locations in order to measure the light distribution intensity distribution.

JP-A-5-107107 JP-A-8-114498 Japanese Patent Laid-Open No. 2005-172665

  However, in any of the methods disclosed in Patent Document 1, Patent Document 2 and Patent Document 3, the state of light emission of the semiconductor light emitting element (hereinafter simply referred to as “light emission state”) is measured three-dimensionally in spherical coordinates, Accordingly, in order to inspect the semiconductor light emitting device, there is a disadvantage that a very large number of measurements must be performed.

  The present invention has been made in view of the above problems, and an example of the object thereof is to measure the light emission state of a semiconductor light emitting element at high speed and to inspect the semiconductor light emitting element based on the measurement result. An object of the present invention is to provide a semiconductor light emitting device inspection apparatus.

  The semiconductor light-emitting element inspection apparatus of the present invention is a semiconductor light-emitting element inspection apparatus that receives light emitted from a semiconductor light-emitting element and inspects the light emission state, on the light emission central axis of the semiconductor light-emitting element, and A light receiving means that is disposed opposite to the semiconductor light emitting element, receives light emitted from the semiconductor light emitting element, and can measure the received light reception status at a plurality of points, and reflects light emitted from the semiconductor light emitting element. And a storage unit for storing reference information as a reference for comparison in order to compare the reflection unit that guides light to the light receiving unit, and the received light information regarding the light intensity at each of the plurality of points obtained by the light receiving unit, Inspection means for performing a comparison inspection between the reference information and the light reception information.

It is explanatory drawing of the light emission condition of LED101 in the 1st Embodiment of this invention. It is explanatory drawing about light distribution intensity distribution. It is explanatory drawing of planar light distribution intensity distribution about cos-type LED. It is explanatory drawing of planar light distribution intensity distribution about donut type LED. It is explanatory drawing of the 1st state of the light reception module 1 for light emitting elements for test | inspecting LED101 in 1st Embodiment. It is explanatory drawing from the side surface of FIG.5 (b). It is explanatory drawing of the outline | summary of a semiconductor light-emitting device inspection apparatus. It is explanatory drawing of the condition of the light which injects into CCD. It is explanatory drawing which supplements FIG. 8 further. It is explanatory drawing of the light reception information (image information) obtained when CCD receives the light of cos-type LED. It is explanatory drawing of the light reception information (image information) obtained when CCD receives the light of donut type LED. It is explanatory drawing explaining 2nd Embodiment.

<First Embodiment>
Hereinafter, the first embodiment of the present invention will be described in detail with reference to FIG.
FIG. 1 is an explanatory diagram of a light emission state of the LED 101 according to the first embodiment of the present invention.

As described in FIG. 1A, an LED (Light Emitting Diode) 101 emits light from a light emitting surface 101a. The normal line of the light emitting surface 101a of the LED 101 is referred to as a light emission central axis (LCA). Further, when one direction on the plane including the light emitting surface 101a is taken as a reference axis (X axis), the counterclockwise angle from the X axis on this plane is φ.
Further, the angle formed with the light emission central axis when φ is fixed is defined as θ.
The intensity of the light emitted from the light emitting surface 101a of the LED 101 varies depending on the angle θ from the light emission central axis, etc. (see also FIG. 2).

By the way, it is expected that the necessity of measuring the light emission state of the LED 101 more accurately and sorting the LED 101 at a higher speed will be further increased. A semiconductor light emitting device inspection apparatus for satisfying such demand will be described below.
The inspection process is established on the premise that the LED 101 normally exhibits the same light intensity when θ is the same.
However, depending on the LED 101, even if θ is the same, if φ is different, the light intensity may be different.
In order to visually express such light intensity, a diagram as shown in FIG. 1B is used.
In FIG. 1B, the intersection of the X axis and the Y axis represents θ = 0 °.
Each point on the circle represents the position of each φ at θ = 90 °.
In such a figure, the light intensity is represented by adding light and shade according to the light intensity. Based on this shading, it is possible to visually know the intensity of light (see FIGS. 3 and 4).
FIG. 1C is a cross-sectional view at a position where the value of φ is constant.
In FIG. 1, the light intensity at the same distance from the LED 101 is defined as the light distribution intensity.
By measuring this light distribution intensity of the manufactured LED 101, it is possible to determine the characteristics of the LED 101.
The determination of this characteristic is, for example, a determination that the light distribution intensity as a whole does not satisfy a certain degree, or that the light distribution intensity at a certain θ position does not satisfy a certain degree.
Furthermore, even if the light distribution intensity as a whole satisfies a certain level and the light distribution intensity at a certain position of θ satisfies a certain level, judgment such as ranking is made according to the degree or the like. .
In addition, according to this determination, a non-defective product is classified, a rank is classified among the non-defective products, and the like.

In addition, the above description has described that LED101 can be considered as a point substantially by measuring in the position far enough from LED101.
In the following description, unless otherwise stated, the LED 101 is assumed to be almost a dot. This is because the LED 101 is extremely small as compared with the normal CCD 105 or the like (see FIG. 5), and can be assumed in this way.

  FIG. 2 is an explanatory diagram of the light distribution intensity distribution.

FIG. 2A is the same diagram as FIG. As shown in FIG. 2A, at a position where the distance r from the LED 101 is constant, the light intensity at a constant angle of θ is the light distribution intensity.
Then, this light distribution intensity is measured for each angle of θ, and a graph of this is the light distribution intensity distribution. Further, the light distribution intensity distribution measured at each θ angle and φ angle and expressed in spherical coordinates is also referred to as a light distribution intensity distribution (hereinafter, such a light distribution intensity distribution in the spherical coordinates is referred to as a spherical light distribution intensity distribution).
If the spherical light distribution intensity distribution can be obtained, the characteristics of the LED 101 can be accurately grasped and sorted.
However, since the spherical light distribution intensity distribution is expressed in spherical coordinates, it is difficult to directly measure it.
Furthermore, what is required in the present embodiment is not a measurement of the spherical light distribution intensity distribution, but an inspection that allows the LED 101 to satisfy a certain performance, or to classify the LED 101 according to the degree when the LED 101 satisfies the certain performance. Is to do.
Therefore, it is not necessary to obtain a precise spherical light distribution intensity distribution.
Instead, light reception information (image information) output by a CCD 105 (Charge Coupled Device) that receives light emitted from the LED 101 satisfying a certain performance is stored in advance by measurement or calculation (this stored information is used as reference information). The reference information is compared with the light reception information (image information) actually output from the CCD 105 that has received the light emitted from the LED 101 to be inspected.
Then, as a result of comparison, the LEDs 101 whose difference from the reference information is within a certain range are classified as satisfying the same performance.
Note that the reference information is stored not only for the LED 101 that satisfies a certain performance but also for each classification target so that the classification can be performed after the certain performance is satisfied.
Here, it is normal to simply arrange the CCD 105 that receives the light of the LED 101 and receive the output of light reception information (image information), but if this is simply done, the range of light that is directly incident on the CCD 105 It is impossible to acquire information in a wider range of the received light information (image information).
Therefore, in the present embodiment, by using the reflection unit 123, θ has acquired a wide range of received light information (image information). Note that the reference information is measured or calculated in a state where the reflection unit 123 is present.

As described above, the purpose of this embodiment, finally, is to inspect the LED 101.
However, it is assumed that the LED 101 having various characteristics exists in the LED 101 to be inspected.
Therefore, as an example of the various LEDs 101, the present embodiment will be described using the cos-type LED 101 of FIG. 2B and the donut-type LED 101 of FIG.
The cos-type and donut-type LEDs 101 are merely examples, and are not intended to limit the LEDs 101 having these two characteristics to the measurement target. However, the normal LED 101 often has characteristics between a cos-type LED 101 having a light peak and a donut-type LED 101 having a light intensity peak at θ = 30 °. That is, the normal LED 101 to be inspected often has a light intensity peak in the range of θ from 0 ° to 30 °. Therefore, as an example of both extremes, a cos-type LED 101 and a donut-type LED 101 of θ = 30 ° shown in FIG.

Hereinafter, in order to understand this embodiment, the characteristic of the light which LED101 emits is demonstrated first.
Since the spherical light distribution intensity distribution indicating the original characteristics of the LED 101 is indicated by spherical coordinates, it is difficult to illustrate.
Therefore, it is visualized by using what is represented by a plane as shown in FIGS. 3B and 4B, which will be described later (this is hereinafter referred to as a planar light distribution intensity distribution), and is perceived by human senses. Making it possible. Note that this planar light distribution intensity distribution is used for convenience to explain the characteristics of the LED 101, and is not calculated (detected or measured) in this embodiment.
In FIGS. 8A, 10C, and 11C, similar figures to the planar light distribution intensity distribution are used, but FIGS. 8A and 10C are used. FIG. 11C is different from the planar light distribution intensity distribution.
FIG. 8A, FIG. 10C, and FIG. 11C are diagrams of received light information (image information) that the CCD 105 actually receives and outputs in this embodiment.
In order to obtain FIG. 8A, FIG. 10C, and FIG. 11C, the semiconductor light-emitting element inspection device 3 (light-receiving module 1 for optical elements) of FIGS. 5 to 7 is used.
Then, the LED 101 is inspected and sorted by the semiconductor light emitting element inspection device 3 (light receiving module 1 for optical elements).

2 to 4 are diagrams for explaining the characteristics of the light emitted from the LED 101. Hereinafter, FIGS. 2 to 4 will be described. FIG. 2B shows the light distribution intensity when θ is 0 °. 2 is an example of the LED 101 (cos type), and FIG. 2C is an example of the LED 101 (doughnut type) having the highest light distribution intensity when θ is in the vicinity of 30 °.
Normally, the light distribution intensity becomes zero at θ = 90 °.
In FIG. 2, the maximum value of θ angle is θ = 90 °, but the light distribution intensity may be measured by setting the angle of θ to 90 ° or more. For example, the angle θ may be measured in the range of 0 ° to 135 °. Of course, the maximum value of the measurement range of the angle of θ is 180 °.

As described above, for example, even if an attempt is made to manufacture a cos-type LED 101 as shown in FIG. 2B, a donut-type LED 101 as shown in FIG. 2C is inevitably manufactured due to a manufacturing error or the like.
Even if it has a cos-type light distribution intensity distribution as shown in FIG. 2B at a certain angle of φ, the donut-shaped distribution as shown in FIG. There is also a possibility of light distribution intensity distribution.
Furthermore, since there may be an LED 101 having a more complicated (non-uniform) light distribution intensity distribution, it is necessary to inspect the LED 101 having such a light distribution intensity distribution at a high speed.

  FIG. 3 is an explanatory diagram of the planar light distribution intensity distribution for the cos-type LED 101.

In FIG. 3B, the light distribution intensity distribution of the cos-type LED 101 as shown in FIG. 3A is measured for all the angles of φ, and this is visualized by the method as shown in FIG. Is.
As shown in FIG. 3B, the LED 101 having a cos-type light distribution intensity distribution as shown in FIG. 3A has the highest light distribution intensity when the angle of θ is 0 ° (the density is expressed as light). As the angle of θ increases, the light distribution intensity decreases (the density is expressed deeper).

  FIG. 4 is an explanatory diagram of the planar light distribution intensity distribution for the donut-shaped LED 101.

In FIG. 4B, the light distribution intensity distribution of the donut-shaped LED 101 as shown in FIG. 4A is measured for all the angles of φ, and this is visualized by the method as shown in FIG. It is a planar light distribution intensity distribution.
As shown in FIG. 4B, the LED 101 having the cos-type light distribution intensity distribution as shown in FIG. 3A has an angle of θ of 30 ° rather than the light distribution intensity when the angle of θ is 0 °. The light distribution intensity is highest in the vicinity (the density is expressed lightly).
Then, as the angle of θ increases further from the vicinity of the angle of θ of 30 °, the light distribution intensity decreases (the density is expressed deeply).

  FIG. 5 is an explanatory diagram of a first state of the light-receiving element light-receiving module 1 for inspecting the LED 101 in the first embodiment.

The light receiving module 1 for light emitting element in FIG. 5 is used to obtain data for inspecting the LED 101.
Hereinafter, the configuration of the light-receiving element-use light receiving module 1 of FIG. 5 will be described.
As shown in FIG. 5A, in the present embodiment, the light-receiving element light-receiving module 1 includes a work 102 (sample mounting table), a CCD 105, a holder 107, a signal line 111, an image processing unit 113, a communication line 115, and a spacer 117. The probe needle 109 and the reflecting portion 123 are provided. However, all of these are not essential components of the light receiving module 1 for light emitting elements, and at least the CCD 105 is sufficient.

LED101 is arrange | positioned on the workpiece | work 102 installed horizontally.
A holder 107 is disposed at a position facing the workpiece 102 with a space therebetween.
A CCD 105 is arranged inside the holder 107.
The LED 101, the workpiece 102, and the CCD 105 are arranged in parallel to each other.
The probe needle 109 is in contact with the electrode of the LED 101 and applies a voltage to the LED 101 when measuring the light reception state and measuring the electrical characteristics.
The probe needle 109 may move while the workpiece 102 and the LED 101 are fixed, and the probe needle 109 and the LED 101 may contact each other. Conversely, the workpiece 102 and the LED 101 may move while the probe needle 109 is fixed, and the probe needle 109 and the LED 101 may come into contact with each other.
Further, the probe needle 109 is connected to the electrical characteristic measuring unit 119.
The probe needles 109 extend radially in a direction perpendicular to the normal line of the LED 101 substantially parallel to the light emitting surface 101 a of the LED 101.

The holder 107 has a cylindrical side surface portion 107b.
The side surface portion 107b has a cylindrical shape and has a shape extending in the direction of θ = 0 °.
The centers of the shielding part 107 a and the side part 107 b have a direction of θ = 0 °, and are the same as the light emission central axis of the light emitting surface 101 a of the LED 101.
The CCD 105 is disposed in a hollow space formed by the inner peripheral surface of the side surface portion 107b.
A circular opening 107c is formed in the central part of the shielding part 107a to form an upside-down inverted frustoconical hollow part. Due to the circular opening 107c, the CCD 105 can receive light emitted from the LED 101.
The hollow space formed by the inner peripheral surface of the shielding part 107a is formed by an inclined surface 107d.
The hollow space formed by the inclined surface 107d has a substantially truncated cone shape that is upside down. It has a shape in which the diameter increases from the LED 101 side toward the CCD 105 side.
In addition, the reason why the substantially truncated cone shape is upside down is that the parabolic reflector 123 is inserted into the hollow space, and strictly, the parabolic shape has a curvature.

The reflecting surface 123a that forms the reflecting portion 123 has a shape of a rotating body obtained by rotating a parabola 360 ° around the light emission central axis. That is, the reflecting portion 123 has a parabolic shape in cross section.
The parabola is formed so that the LED 101 is at the focal position (or near the focal position). That is, it has such a shape that the diameter increases from the LED 101 side toward the CCD 105 side.
Thus, since the reflecting part 123 has a parabolic shape and the LED 101 is arranged at the focal position of the parabola (or in the vicinity of the focal position), all the light reflected by the reflecting part 123 is centered on the emission center axis. Go straight in parallel.

  In addition, the reflection part 123 may be comprised from metal materials, such as stainless steel, aluminum, and silver, and may reflect itself. Further, a reflective material such as aluminum or silver may be coated on the surface of the material that reflects or does not reflect.

Moreover, FIG.5 (b) is an enlarged view of the vicinity of LED101 of Fig.5 (a).
The workpiece 102 has a truncated cone shape, and the LED 101 is disposed on the upper surface of the truncated cone.
As shown in FIG. 5B, the reflection portion 123 is formed to extend to a position on the opposite side of the LED 101 from the CCD 105 side.
As described above, since the reflecting portion 123 is formed to extend to a position opposite to the CCD 105 side of the LED 101, the light emitted to the range where the angle θ is 90 ° or more is also reflected on the reflecting surface of the reflecting portion 123. It can be reflected by 123a.
Then, the light that is emitted in the direction in which the angle θ is 90 ° or more and is reflected by the reflection surface 123a on the opposite side to the CCD 105 side of the LED 101 is emitted in the direction in which the angle θ is 90 ° or less and is reflected by the reflection surface 123a. Similar to the reflected light, the light travels parallel to the emission center axis.

  Since it is configured as described above, in addition to the light emitted from the LED 101 and reflected by the reflecting surface 123a, the light emitted from the LED 101 and not reflected by the reflecting surface 123a also enters the CCD 105.

  FIG. 6 is an explanatory view from the side of FIG.

As shown in FIG. 6, the reflecting portion 123 has a slit portion 123b. The probe needle 109 is inserted into the slit portion 123b, and a voltage or the like is applied to the surface of the LED 101.
Since the slit portion 123b and the probe needle 109 are formed to be relatively small, the light from the LED 101 disposed on the workpiece 102 is only slightly inhibited.

  FIG. 7 is an explanatory diagram of an outline of the semiconductor light emitting element inspection apparatus 3.

In addition to the light receiving element light receiving module 1, the semiconductor light emitting element inspection apparatus 3 includes an electrical characteristic measurement unit 119, a storage unit 161, a display unit 163, and a tester 151 (comparison unit 165).
In the present embodiment, the light receiving module 1 for the light emitting element includes a work 102 (sample mounting table), a CCD 105, a holder 107, a signal line 111, an image processing unit 113, a communication line 115, and a spacer 117.
However, all of these are not essential components of the light receiving module 1 for light emitting elements, and at least the CCD 105 is sufficient.
The electrical characteristic measurement unit 119 includes an HV unit 153, an ESD unit 155, a switching unit 157, and a positioning unit 159.

Each light receiving element of the CCD 105 receives light emitted from the LED 101.
Then, the light receiving element outputs an electrical signal of the intensity (information) of the received light as an analog signal to the image processing unit 113.
The light information output from the CCD 105 is information in which the positions in the X direction (horizontal direction) and the Y direction (vertical direction) are specified, and can therefore be referred to as light reception information as a surface.
That is, since the information output from the CCD 105 is light reception information as a surface, it can also be called image information. Therefore, the CCD 105 can be said to be a light receiving means, and more specifically, it can be said to be an imaging means.
The image processing unit 113 converts the received light information (image information) from an analog signal to a digital signal. Further, the image processing unit 113 converts (image processing) into information suitable for comparison by the comparison unit 165 of the tester 151.
Specifically, the light reception information (image information) may be binarized into white and black according to the intensity of light with respect to a threshold value. Moreover, you may binarize with another reference | standard.
Further, the image processing unit 113 may change the light reception information (image information) to 256 gradations.

In the case of binarization, since the processing amount processed by the comparison unit 165 can be extremely reduced, there is an advantage that high-speed processing is possible.
On the other hand, in the case of 256 gradations, the light emission status of the LED 101 can be grasped with higher resolution, and therefore there is an advantage that a finer comparison can be performed by the comparison unit 165. Further, gradation may be made by subdivided gradation.
Note that this conversion method is merely an example, and image processing may be performed by other methods.
Image information converted into digital signals by the image processing unit 113 and converted (image processing) into information suitable for comparison by the comparison unit 165 of the tester 151 is output to the tester 151 via the communication line 115.

The probe needle 109 has a function of applying a voltage for causing the LED 101 to emit light by physically contacting the surface of the LED 101.
The probe needle 109 is positioned and fixed by a positioning unit 159.
If the positioning unit 159 is of a type in which the workpiece 102 moves, the positioning unit 159 has a function of holding the tip position of the probe needle 109 at a fixed position. Conversely, if the positioning unit 159 is of a type in which the probe needle 109 moves, the tip position of the probe needle 109 is moved to a predetermined position on the workpiece 102 on which the LED 101 is placed, and then the position is reached. Has the function of holding.

The HV unit 153 has a role of detecting various characteristics of the LED 101 with respect to the rated voltage by applying the rated voltage.
Normally, the CCD 105 measures the light emitted from the LED 101 in a state where the voltage from the HV unit 153 is applied.
Various characteristic information detected by the HV unit 153 is output to the tester 151.

The ESD unit 155 is a unit that inspects whether or not the LED 101 is electrostatically discharged by applying a large voltage to the LED 101 for a moment to cause electrostatic discharge.
The electrostatic breakdown information detected by the ESD unit 155 is output to the tester 151.

The switching unit 157 switches between the HV unit 153 and the ESD unit 155.
That is, the voltage applied to the LED 101 via the probe needle 109 is changed by the switching unit 157. And by this change, the inspection item of LED101 is each changed to the detection of the various characteristics in a rated voltage, or the presence or absence of an electrostatic breakdown.

The storage unit 161 stores reference information serving as a reference for comparison.
This reference information is used for comparison with light reception information (image information) obtained by the CCD 105.
This reference information can be stored in advance or can be created and stored as necessary.
Specifically, for example, cos-type light reception information (image information), light reception information (image information) of a donut LED 101 in which a peak is formed at a position where θ is 5 °, and a peak at a position where θ is 10 °. Light reception information (image information) to be formed, light reception information (image information) in which a peak is formed at a position where θ is 15 °, light reception information (image information) in which a peak is formed at a position where θ is 20 °, θ is A plurality of reference information (reference image information) such as light reception information (image information) in which a peak is formed at a position of 25 ° and light reception information (image information) in which a peak is formed at a position of θ of 30 ° Measured and stored in the storage unit 161.

The display unit 163 displays light reception information (image information). Further, comparison / inspection result information by a tester 151 to be described later may be displayed.
In different embodiments, the inspector can determine whether the LED 101 is good or bad based on the information displayed by the display unit 163.

The tester 151 receives input of light reception information (image information), various electrical characteristic information detected by the HV unit 153, and electrostatic breakdown information detected by the ESD unit 155.
Then, the tester 151 analyzes and sorts the characteristics of the LED 101 from these inputs.
In particular, in the present embodiment, the tester 151 receives input of image information converted (image processing) by the image processing unit 113.
Then, the reference information (reference image information) stored in the storage unit 161 is compared with this image information in the comparison unit 165 in the tester 151.
For the comparison, various methods may be used. For example, the comparison is performed by comparison by pattern matching or the like.

More specifically, if a plurality of pieces of reference information (cos type and reference information of the donut type LED 101 having a peak at each θ value) exemplified in the description of the storage unit 161 is used, the light reception information is used. The (image information) is compared with the plurality of reference information (reference image information), and when the difference is within a certain range, an inspection is performed to determine that the image has the same characteristics as the reference information.
Note that it is not necessary to perform the inspection based on the light intensity, and the inspection may be performed at the wavelength of light using an optical filter or the like. In other words, what kind of inspection can be used as long as it can inspect the coincidence / inconsistency based on a difference from some reference information (reference image information), and can classify a non-defective product, a product based on the wavelength of light, etc. It may be a thing.

Based on the result of the inspection, the tester 151 performs classification for each individual LED 101.
Specifically, for example, the tester 151 performs sorting to determine that the LED 101 that does not have a certain performance should be discarded. Further, the separation is performed for each light quantity.
Note that the tester 151 performs similar classification from various electrical characteristic information detected by the HV unit 153 and electrostatic breakdown information detected by the ESD unit 155.
The physical separation is performed in a process after the inspection by the semiconductor light emitting element inspection apparatus 3.

  FIG. 8 is an explanatory diagram of the state of light incident on the CCD 105. FIG. 9 is an explanatory diagram further supplementing FIG.

As shown in FIG. 8B, the composite light in which both the direct light that is not reflected by the reflection portion 123 and the reflected light that is reflected by the reflection portion 123 is combined is incident on the CCD 105.
Here, the direct light to point A is represented as DLA, and the reflected light to point A is represented as RLA. The RLA to point A is a reflection of light emitted in the direction of θ within 90 °.
Moreover, the direct light to the point B is represented as DLB, and the reflected light to the point B is represented as RLB. Note that the RLB to the point B is a reflection of light emitted in a direction where θ is 90 ° or more.
For direct light, light in the range of θ within θ1 becomes direct light, and for reflected light, light in the range of θ in the range of θ1 to θ2 becomes reflected light.
Here, θ1 is a value of θ of a straight line drawn from the radiation surface of the LED 101 to the outermost peripheral portion of the CCD 105.
Θ2 is the angle of the side surface of the truncated cone-shaped workpiece 102. That is, at an angle θ greater than this, since the work 102 shields the light, the light does not enter the reflecting portion 123 and is not reflected, so that the light with an angle greater than θ2 is not received by the CCD 105. As a result, θ2 is the maximum measurable range.

In addition, since the reflection part 123 has a parabolic shape, all the light reflected by this reflection part 123 goes straight in parallel with the light emission central axis. As a result, light having a different angle of θ does not enter each light receiving element of the CCD 105 except that direct light and reflected light are superimposed.
For example, the light incident on the point A is only direct light having θ of θA1 and reflected light having θ of θA2, and other light having an angle of θ does not enter the point A.
In the present embodiment, received light information (image information) that the CCD 105 will receive at each θ angle is calculated from the intensity information of the light received by the CCD 105 using the property between the parabola and the focal point. It is possible.

Due to the presence of the reflecting portion 123, both direct light that is not reflected by the reflecting portion 123 and reflected light that is reflected by the reflecting portion 123 enter the CCD 105, and light having an intensity as shown in FIG. Is incident.
In FIG. 8A, a portion with a high density indicates that the light intensity is low, and a portion with a low density indicates that the light intensity is high. In addition, the figure of this Fig.8 (a) assumes the case where LED101 to measure is cos-type LED101.
FIG. 9A shows the light intensity from point C to point D in FIG. 8A.
As can be seen from FIG. 9 (a), the intensity of light decreases as it travels from point C to the outside. However, the intensity of light increases rapidly at point E. Then, the intensity of light suddenly decreases again as it goes from point E to point F. Thereafter, the light intensity gradually decreases from the F value point to the D point.
The intensity of the reflected light at the point F is zero because the LED 101 does not emit light in the direction of θ = 90 °.
In addition, the positions where the light at the points A, F, and E received by the CCD 105 are reflected by the reflecting portion 123 correspond to A ′, F ′, and E ′, respectively.
E ′ is the position of the portion of the reflecting portion 123 that contacts the workpiece 102 side.

Next, how the light emitted from the LED 101 is received by the CCD 105 will be described (refer to FIG. 9 in particular).
First, when [theta] increases from 0 [deg.] (Corresponding to point C) to [theta] 1 (corresponding to point D), the CCD 105 receives light at each angle as direct light accordingly. Further, when θ increases from θ1 (at point D) to θ2 (corresponds to point E), the CCD 105 receives light as reflected light at each angle.
That is, in the range of θ = 0 ° to θ1, as the angle of θ increases, the light trajectory of each angle moves from point C to point D1 via point E1.
Next, in the range of θ = θ1 to θ2, when the angle of θ further increases, the light trajectory of each angle turns around at the point D (D1, D2) and moves from the point D2 to the point E2.
Therefore, only direct light is received up to the point E (E1, E2), and both direct light and reflected light are received from the point E (E1, E2).
At point F, reflected light of θ = 90 ° should be incident, but since the LED 101 does not emit light in the θ = 90 ° direction, the amount of reflected light is zero.
As a result, for example, at the point A, the light intensity that is the sum of the direct light intensity Pad at θ = θA1 and the reflected light intensity Par at θ = θA2 is detected.

As described above, when the light reception state received by the CCD 105 is measured, the light reception information received by the CCD 105 includes all the light reception information in the range of θ from 0 ° to θ2. Further, since the CCD 105 has light reception information (image information) as a surface, all the light reception information in the range of φ of 0 ° to 360 ° is also included.
Therefore, by comparing this light reception information (image information) with reference information (reference image information), the LED 101 being measured can be inspected.
Hereinafter, what kind of received light information is described will be described with a specific example.

FIG. 10 is an explanatory diagram of light reception information (image information) obtained when the CCD 105 receives light from the cos-type LED 101.
FIG. 11 is an explanatory diagram of light reception information (image information) obtained when the CCD 105 receives light from the donut-shaped LED 101.

When the light from the cos-type LED 101 is measured by the light-receiving element light-receiving module 1 as shown in FIG. 5, light-receiving information (image information) as shown in FIG. 10C can be obtained.
In addition, this FIG.10 (c) is light reception information (image information) in case the intensity | strength of light becomes Fig.9 (a). FIG. 10B is the same diagram as FIG.
FIG. 10A shows the light distribution intensity of the cos-type LED 101. However, since it is possible to measure the range where θ is 90 ° or more (the range where θ is 90 ° to θ2), the range where θ is 90 ° to θ2 is also described.

When the light of the donut-shaped LED 101 is measured by the light-receiving element light-receiving module 1 as shown in FIG. 5, light-receiving information (image information) as shown in FIG. 11C can be obtained.
FIG. 11B is a diagram showing the intensity of light received by the CCD 105 in the donut-shaped LED 101. This FIG.11 (b) is described by the same method as FIG.10 (b).
FIG. 11A shows the light distribution intensity of the donut-shaped LED 101. However, since it is possible to measure the range where θ is 90 ° or more (the range where θ is 90 ° to θ2), the range where θ is 90 ° to θ2 is also described.

As can be seen by comparing FIG. 10C and FIG. 11C, the light reception information (image information) is completely different depending on the light emission state of the LED 101.
In the above example, the cosine type LED 101 and the donut type LED 101 are compared as an extreme example. However, the normal LED 101 is in the meantime, and they can also obtain different light reception information (image information). .
And it classify | categorizes compared with the some reference | standard information (reference | standard image information) obtained beforehand.
Therefore, by comparing with the reference information, defective products and ranks of the LED 101 can be obtained.

<Second Embodiment>
FIG. 12 is an explanatory diagram for explaining the second embodiment.

The point of 1st Embodiment is that the light reception information (image information) showing the light emission condition of LED101 can be acquired and processed in a short time (at high speed).
Therefore, it is suitable for processing a plurality of LEDs 101 continuously.
Therefore, a plurality of LEDs 101 are arranged on the wafer 102c as shown in FIG. 12, and these are continuously measured.
In the second embodiment, the reflecting portion 123 is formed so that θ is reflected by 60 °.
And in this 2nd Embodiment, when LED101 is test | inspected, it has a control means which moves the movement stage 102b so that LED101 may be arrange | positioned in the vicinity of the parabolic focus.

<Third Embodiment>
In the above embodiment, the reflecting portion 123 is a parabolic rotating body. However, for example, the reflecting portion 123 may have a truncated cone shape whose diameter increases toward the CCD 105 side. That is, it is not necessary to limit to the parabolic rotator of the reflecting portion 123.
Even in this case, it is possible to compare and inspect if there is only the reference information.
Therefore, the shape of the reflection part 123 does not need to be a rotating body shape in which a parabola is rotated.
Further, it is not always necessary to place the LED 101 at the focal position of the parabola. Similarly, if there is only the reference information, it is possible to compare and inspect.

<Effect of embodiment>
The semiconductor light-emitting element inspection apparatus 3 according to this embodiment is a semiconductor light-emitting element inspection apparatus 3 that receives light emitted from the LED 101 and inspects the light emission state, and is on the light emission central axis of the LED 101 and faces the LED 101. And a CCD 105 that receives the light emitted from the LED 101 and can measure the received light reception status at each of a plurality of points.
In addition, the semiconductor light emitting device inspection apparatus 3 includes a reflection unit 123 that reflects light emitted from the LED 101 and guides it to the CCD 105.
Further, the semiconductor light emitting element inspection apparatus 3 includes a storage unit 161 for storing reference information serving as a reference for comparison in order to compare with the received light information regarding the light reception status at each of a plurality of points obtained by the CCD 105, the reference information, and the light reception. And a tester 151 for performing a comparison inspection on the information.
With such a configuration, the semiconductor light emitting element inspection apparatus 3 can measure the light emission state of the semiconductor light emitting element at a high speed and inspect the semiconductor light emitting element based on the measurement result.

The CCD 105 includes a CCD 105 that can acquire image information that is light reception information as a surface. The reference information stored in the storage unit 161 is reference image information. The tester 151 compares and inspects the reference image information and the image information. .
Since it has such a structure, it becomes possible to process received light information as an image, and to inspect a semiconductor light emitting element at a higher speed.

An image processing unit 113 that binarizes image information captured by the CCD 105 and provides the binarized image information to the tester 151 is provided.
Since it has such a configuration, since the value processed by the comparison unit 165 of the tester 151 is only binary, the semiconductor light emitting element can be inspected at a higher speed.

An image processing unit 113 that converts image information captured by the CCD 105 into 256 gradations and provides it to the tester 151 is provided.
With such a configuration, it is possible to inspect the semiconductor light emitting element with high accuracy while speeding up the processing in the comparison unit 165 of the tester 151.

The image information acquired by the CCD 105 is displayed on the display unit 163.
Since it has such a structure, it becomes possible for an inspector to add a visual check further as needed.

The LED 101 is disposed on the wafer 102c, the wafer 102c is held by the moving stage 102b, and has control means for moving the moving stage 102b when the LED 101 is inspected.
Since it comprised in this way, it becomes possible to test | inspect LED101 continuously.

The reflecting portion 123 is disposed between the LED 101 and the light receiving portion, and an inner surface thereof is a rotating body centered on the light emission central axis, and a cross-sectional shape cut on the light emission central axis is formed in a parabolic shape. .
By having such a configuration, the reference information can be obtained more easily.

The LED 101 is disposed on the wafer 102c, and the wafer 102c is held on the moving stage 102b. When the LED 101 is inspected, the LED 101 is disposed near the parabolic focus of the reflecting portion 123. Control means for moving the moving stage 102b is provided.
Since it comprised in this way, it becomes possible to test | inspect LED101 continuously.

Further, the present invention is not limited to the above embodiment, and various changed structures and configurations may be performed. Note that the present invention is not limited to a light emitting element inspection apparatus for inspecting a light emission state, and may be a method using this.
Furthermore, in this embodiment, the measurement of the wavelength of light is not performed, but the wavelength may be measured using an optical filter or the like, and may be naturally classified for each wavelength.
In addition, separation may be performed by measuring the intensity of light at each wavelength.

<Definition etc.>
In the present invention, the light reception status refers to all information contained in light such as the intensity of received light and the wavelength of light using an optical filter or the like.
In the present invention, light emission information refers to information on the state of light generated by a semiconductor light emitting element. Specifically, it is information on the state of light emitted from the semiconductor light emitting element at each θ angle, φ angle, and the like.
In the present invention, light reception information refers to information on the light reception status received by the light receiving means.
The CCD 105 according to the embodiment is an example of a light receiving unit in the present invention. In other words, the light receiving means in the present invention may be anything as long as it has a plurality of light receiving elements and can measure the light intensity. The CCD 105 according to the embodiment is an example of an imaging unit in the present invention. That is, the imaging means may be anything as long as it can acquire light reception information as a surface.
The LED 101 is an example of a semiconductor light emitting element in the present invention. That is, the semiconductor light emitting element may be any element that emits light. Here, the light is not limited to visible light, and may be, for example, infrared rays or ultraviolet rays.
Furthermore, the reflection part 123 is an example of the reflection part of this invention. That is, the reflecting portion 123 may be any material as long as it can reflect light, and may be any material as long as the constituent member itself can reflect, or the reflecting portion may be coated by vapor deposition or the like. It may be formed by.
In the present invention, the emission central axis is an axis that becomes the center of light when the semiconductor light emitting element emits light.
In the present invention, the storage means may be anything as long as it can be stored. For example, it may be ROM, RAM or the like.
An example of the inspection means in the present invention is the tester 151 of the embodiment. More specifically, in the present invention, an example of the inspection unit is the comparison unit 165 of the embodiment.

3 Semiconductor Light Emitting Element Inspection Device 101 LED (Semiconductor Light Emitting Element)
102c Wafer 105 CCD (light receiving means, imaging means)
109 Probe needle 113 Image processor 123 Reflector 151 Tester (inspection means)
161 storage unit 163 display unit 165 comparison unit (inspection means)

The semiconductor light-emitting element inspection apparatus of the present invention is a semiconductor light-emitting element inspection apparatus that receives light emitted from a semiconductor light-emitting element and inspects the light emission state, on the light emission central axis of the semiconductor light-emitting element, and A light-receiving means that is disposed opposite to the semiconductor light-emitting element, receives light emitted from the semiconductor light-emitting element, and can acquire image information that is light-receiving information as a surface; and radiates from the semiconductor light-emitting element In order to compare the reflected light to the light receiving means and the image information obtained by the light receiving means, reference image information indicating a light distribution intensity as a reference for comparison is stored. Storage means, and inspection means for inspecting light distribution intensity by comparing the reference image information and the image information .

The semiconductor light-emitting element inspection apparatus of the present invention is a semiconductor light-emitting element inspection apparatus that receives light emitted from a semiconductor light-emitting element and inspects the light emission state, on the light emission central axis of the semiconductor light-emitting element, and A light-receiving means that is disposed opposite to the semiconductor light-emitting element, receives light emitted from the semiconductor light-emitting element, and can acquire image information that is light-receiving information as a surface; and radiates from the semiconductor light-emitting element In order to compare with the image information obtained by the light receiving means, a reflecting portion that reflects the light according to the angle from the light emission central axis of the semiconductor light emitting element and guides it to the light receiving means Further, the storage means for storing the reference image information indicating the light distribution intensity indicating the light intensity according to the angle from the light emission central axis of the light emitting element as the reference for comparison, and the reference image information and the image information are compared. In Ri having a test means for performing an inspection regarding the light distribution intensity.

The semiconductor light-emitting element inspection apparatus of the present invention is a semiconductor light-emitting element inspection apparatus that receives light emitted from a semiconductor light-emitting element and inspects the light emission state, and the light emission state inspection is the semiconductor light emission to be inspected The semiconductor light-emitting element inspection apparatus determines the characteristics of the semiconductor light-emitting element by measuring light intensity according to an angle from the light-emission central axis indicating the light distribution intensity of the element. A light receiving means comprising an imaging means disposed on and opposite to the semiconductor light emitting element, receiving light emitted from the semiconductor light emitting element, and capable of acquiring image information as light reception information as a surface; A light radiated from the semiconductor light emitting element, reflecting a light according to an angle from a light emission central axis of the semiconductor light emitting element, and guiding the light to the light receiving means; and the light receiving means Wherein in order to compare with the image information, storing means for storing an angle by standards image information is the light intensity from the luminescent center axis indicating the light intensity of the semiconductor light emitting element as a reference for the comparison, the reference image information And inspection means for inspecting a characteristic indicating the light distribution intensity by comparing the image information with the image information, and the reflection portion is disposed between the semiconductor light emitting element and the light receiving means, An inner surface is formed in a shape of a rotating paraboloid obtained by rotating a parabola around the emission central axis of the semiconductor light emitting element, and the semiconductor light emitting element to be inspected is disposed in the vicinity of the focal point of the parabola, The light emitting element inspection apparatus causes the light receiving means to receive the light emitted from the semiconductor light emitting element without condensing the light, and the light receiving means causes the reflecting portion of the light emitted from the semiconductor light emitting element to react. And reflected light, the reflected portion is received and direct light directly enters the without reflection.

Claims (8)

A semiconductor light-emitting element inspection apparatus that receives light emitted from a semiconductor light-emitting element and inspects the light emission state,
A light receiving element arranged on the light emission central axis of the semiconductor light emitting element and facing the semiconductor light emitting element, receiving light emitted from the semiconductor light emitting element, and measuring the received light reception status at a plurality of points. Means,
A reflecting portion that reflects light emitted from the semiconductor light emitting element and guides the light to the light receiving means;
Storage means for storing reference information as a reference for comparison in order to compare with light reception information regarding the light reception status for each of a plurality of points obtained by the light receiving means;
A semiconductor light emitting element inspection apparatus comprising: inspection means for performing a comparative inspection between the reference information and the light reception information. The light receiving means comprises imaging means capable of acquiring image information which is light reception information as a surface,
The reference information stored by the storage means is reference image information,
The semiconductor light-emitting element inspection apparatus according to claim 1, wherein the inspection unit performs a comparative inspection between the reference image information and the image information. The semiconductor light-emitting element inspection apparatus according to claim 2, further comprising an image processing unit that binarizes image information captured by the imaging unit and provides the binarized image information to the inspection unit. The semiconductor light-emitting element inspection apparatus according to claim 2, further comprising an image processing unit that converts image information captured by the imaging unit into 256 gradations and provides the information to the inspection unit. The semiconductor light-emitting element inspection apparatus according to claim 2, wherein the image information acquired by the imaging unit is displayed on a display unit. The semiconductor light emitting device is disposed on a wafer,
The wafer is held on a moving stage;
The semiconductor light-emitting element inspection apparatus according to claim 1, further comprising a control unit that moves the moving stage when the semiconductor light-emitting element is inspected. The reflective portion is
Disposed between the semiconductor light emitting element and the light receiving portion;
The inner surface is a rotating body centered on the light emission central axis,
The semiconductor light-emitting element inspection apparatus according to claim 1, wherein a cross-sectional shape cut on the light emission central axis is formed in a parabolic shape. The semiconductor light emitting device is disposed on a wafer,
The wafer is held on a moving stage;
The semiconductor light-emitting element inspection apparatus according to claim 7, further comprising a control unit that moves the moving stage so that the semiconductor light-emitting element is disposed in the vicinity of the parabolic focus when the semiconductor light-emitting element is inspected.