JPWO2012117601A1 - 炭素含有率取得装置および炭素含有率取得方法 - Google Patents

炭素含有率取得装置および炭素含有率取得方法 Download PDF

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JPWO2012117601A1
JPWO2012117601A1 JP2013502142A JP2013502142A JPWO2012117601A1 JP WO2012117601 A1 JPWO2012117601 A1 JP WO2012117601A1 JP 2013502142 A JP2013502142 A JP 2013502142A JP 2013502142 A JP2013502142 A JP 2013502142A JP WO2012117601 A1 JPWO2012117601 A1 JP WO2012117601A1
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carbon content
value
sic film
peak value
peak
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JP2013502142A
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English (en)
Japanese (ja)
Inventor
裕之 藤原
裕之 藤原
真二 山口
真二 山口
克雄 杉本
克雄 杉本
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Publication of JPWO2012117601A1 publication Critical patent/JPWO2012117601A1/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2013502142A 2011-03-01 2011-09-28 炭素含有率取得装置および炭素含有率取得方法 Abandoned JPWO2012117601A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011043939 2011-03-01
JP2011043939 2011-03-01
PCT/JP2011/072218 WO2012117601A1 (ja) 2011-03-01 2011-09-28 炭素含有率取得装置および炭素含有率取得方法

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JPWO2012117601A1 true JPWO2012117601A1 (ja) 2014-07-07

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JP2013502142A Abandoned JPWO2012117601A1 (ja) 2011-03-01 2011-09-28 炭素含有率取得装置および炭素含有率取得方法

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JP (1) JPWO2012117601A1 (zh)
TW (1) TWI473986B (zh)
WO (1) WO2012117601A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6919625B2 (ja) * 2018-05-10 2021-08-18 信越半導体株式会社 不純物濃度の測定方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61204544A (ja) * 1985-03-08 1986-09-10 Showa Denko Kk 炭化珪素中の遊離炭素定量法
JPH08264815A (ja) * 1995-03-23 1996-10-11 Sanyo Electric Co Ltd 非晶質シリコンカーバイド膜及びこれを用いた光起電力素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191487A (ja) * 1982-05-04 1983-11-08 イビデン株式会社 炭化珪素質基板およびその製造方法
JPH06201590A (ja) * 1992-12-28 1994-07-19 Kanegafuchi Chem Ind Co Ltd ケミカルセンサーデバイス
JPH0712714A (ja) * 1993-06-29 1995-01-17 Fuji Electric Co Ltd 磁気記録媒体のカーボン保護膜の評価方法
JPH09251004A (ja) * 1996-03-15 1997-09-22 Sumitomo Osaka Cement Co Ltd 光音響分析方法およびその装置
JPH09330966A (ja) * 1996-06-07 1997-12-22 Sumitomo Metal Ind Ltd シリコン基板中炭素の検出方法
AU764635B2 (en) * 1999-02-10 2003-08-28 Schunk Kohlenstofftechnik Gmbh Method of regulating a high temperature gaseous phase process and use of said method
US7369233B2 (en) * 2002-11-26 2008-05-06 Kla-Tencor Technologies Corporation Optical system for measuring samples using short wavelength radiation
JP4733589B2 (ja) * 2006-08-07 2011-07-27 株式会社堀場製作所 定量分析方法、定量分析装置及びプログラム
JP5397693B2 (ja) * 2010-02-25 2014-01-22 大日本スクリーン製造株式会社 水素含有率取得装置および水素含有率取得方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61204544A (ja) * 1985-03-08 1986-09-10 Showa Denko Kk 炭化珪素中の遊離炭素定量法
JPH08264815A (ja) * 1995-03-23 1996-10-11 Sanyo Electric Co Ltd 非晶質シリコンカーバイド膜及びこれを用いた光起電力素子

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JPN6015023380; Ｓ．Ｇｕｐｔａ ｅｔ ａｌ．: 'Ｉｎｔｅｒｐｌａｙ ｏｆ ｈｙｄｒｏｇｅｎ ａｎｄ ｄｅｐｏｓｉｔｉｏｎ ｔｅｍｐｅｒａｔｕｒｅ ｉｎ ｏｐｔｉｃａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆ ｈｏｔ-ｗｉｒｅ ｄｅｐｏｓｉｔｅｄ ａ-Ｓｉ：Ｈ' Ｊｏｕｒｎａｌ ｏｆ Ｖａｃｕｕｍ Ｓｃｉｅｎｃｅ ＆ Ｔｅｃｈｎｏｌｏｇｙ Ａ Ｖｏｌ．２３ Ｎｏ．６, 2005, ｐｐ．１６６８-１６７５ *
JPN7015001614; Ｄ．Ｋ．Ｂａｓａ ｅｔ ａｌ．: 'Ｓｐｅｃｔｒｏｓｃｏｐｉｃ ｅｌｌｉｐｓｏｍｅｔｒｙ ｓｔｕｄｙ ｏｆ ｈｙｄｒｏｇｅｎａｔｅｄ ａｍｏｒｐｈｏｕｓ ｓｉｌｉｃｏｎ ｃａｒｂｏｎ ａｌｌｏｙ ｆｉｌｍｓ ｄｅｐｏｓｉｔｅｄ ｂｙ ｐ' Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｖｏｌ．１０７, 2010, ｐｐ．０２３５０２-１〜０２３５０２-６ *
JPN7015001615; Ｓｙｏｚｏ Ｔａｋａｄａ ｅｔ ａｌ．: 'Ｄｅｐｅｎｄｅｎｃｅｓ ｏｆ Ｙｏｕｎｇ'ｓ ｍｏｄｕｌｕｓ ｏｆ ｐｏｒｏｕｓ ｓｉｌｉｃａ ｌｏｗ ｄｉｅｌｅｃｔｒｉｃ ｃｏｎｓｔａｎｔ ｆｉｌｍｓ ｏｎ ｓｋｅｌｅｔａｌ ｓｔｒｕｃｔｕｒｅ' Ｊｏｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｖｏｌ．１００, 2006, ｐｐ．１２３５１２-１〜１２３５１２-５ *

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WO2012117601A1 (ja) 2012-09-07
TWI473986B (zh) 2015-02-21
TW201237392A (en) 2012-09-16

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