JPWO2008139981A1 - 発光装置および発光装置用パッケージ集合体 - Google Patents
発光装置および発光装置用パッケージ集合体 Download PDFInfo
- Publication number
- JPWO2008139981A1 JPWO2008139981A1 JP2009514124A JP2009514124A JPWO2008139981A1 JP WO2008139981 A1 JPWO2008139981 A1 JP WO2008139981A1 JP 2009514124 A JP2009514124 A JP 2009514124A JP 2009514124 A JP2009514124 A JP 2009514124A JP WO2008139981 A1 JPWO2008139981 A1 JP WO2008139981A1
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- lower electrode
- substrate
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 207
- 229910052751 metal Inorganic materials 0.000 claims abstract description 107
- 239000002184 metal Substances 0.000 claims abstract description 107
- 239000000919 ceramic Substances 0.000 claims abstract description 84
- 229910000679 solder Inorganic materials 0.000 claims description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 abstract description 13
- 230000001070 adhesive effect Effects 0.000 abstract description 13
- 229920005989 resin Polymers 0.000 abstract description 13
- 239000011347 resin Substances 0.000 abstract description 13
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 37
- 239000003566 sealing material Substances 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000000806 elastomer Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QLTBJHSQPNVBLW-UHFFFAOYSA-N [Bi].[In].[Ag].[Sn] Chemical compound [Bi].[In].[Ag].[Sn] QLTBJHSQPNVBLW-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- VRUVRQYVUDCDMT-UHFFFAOYSA-N [Sn].[Ni].[Cu] Chemical compound [Sn].[Ni].[Cu] VRUVRQYVUDCDMT-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007124551 | 2007-05-09 | ||
JP2007124551 | 2007-05-09 | ||
PCT/JP2008/058443 WO2008139981A1 (ja) | 2007-05-09 | 2008-04-24 | 発光装置および発光装置用パッケージ集合体 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2008139981A1 true JPWO2008139981A1 (ja) | 2010-08-05 |
Family
ID=40002185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009514124A Pending JPWO2008139981A1 (ja) | 2007-05-09 | 2008-04-24 | 発光装置および発光装置用パッケージ集合体 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2008139981A1 (zh) |
KR (1) | KR20100028033A (zh) |
CN (1) | CN101681960B (zh) |
TW (1) | TW200921945A (zh) |
WO (1) | WO2008139981A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102412346A (zh) * | 2010-09-23 | 2012-04-11 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
KR20120045880A (ko) * | 2010-11-01 | 2012-05-09 | 삼성엘이디 주식회사 | Led 패키지의 광특성 측정 장치 |
JP5896302B2 (ja) | 2010-11-02 | 2016-03-30 | 大日本印刷株式会社 | Led素子搭載用リードフレーム、樹脂付リードフレーム、半導体装置の製造方法、および半導体素子搭載用リードフレーム |
CN102544325B (zh) * | 2012-02-14 | 2013-06-12 | 张家港市金港镇东南电子厂 | 一种led集成模组及其制作方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2006066409A (ja) * | 2004-07-28 | 2006-03-09 | Kyocera Corp | 発光素子用配線基板および発光装置ならびに発光素子用配線基板の製造方法 |
JP2006156704A (ja) * | 2004-11-30 | 2006-06-15 | Nichia Chem Ind Ltd | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
JP2006303397A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置 |
JP2006339559A (ja) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Led部品およびその製造方法 |
JP2006351895A (ja) * | 2005-06-17 | 2006-12-28 | Koito Mfg Co Ltd | 発光デバイス及びこれを用いた光源装置 |
JP2007005722A (ja) * | 2005-06-27 | 2007-01-11 | Toshiba Corp | 光半導体素子用外囲器およびそれを用いた光半導体装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070200133A1 (en) * | 2005-04-01 | 2007-08-30 | Akira Hashimoto | Led assembly and manufacturing method |
-
2008
- 2008-04-24 WO PCT/JP2008/058443 patent/WO2008139981A1/ja active Application Filing
- 2008-04-24 CN CN200880015205XA patent/CN101681960B/zh not_active Expired - Fee Related
- 2008-04-24 JP JP2009514124A patent/JPWO2008139981A1/ja active Pending
- 2008-04-24 KR KR1020097025641A patent/KR20100028033A/ko not_active Application Discontinuation
- 2008-05-01 TW TW097116055A patent/TW200921945A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2006066409A (ja) * | 2004-07-28 | 2006-03-09 | Kyocera Corp | 発光素子用配線基板および発光装置ならびに発光素子用配線基板の製造方法 |
JP2006156704A (ja) * | 2004-11-30 | 2006-06-15 | Nichia Chem Ind Ltd | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
JP2006303397A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置 |
JP2006339559A (ja) * | 2005-06-06 | 2006-12-14 | Matsushita Electric Ind Co Ltd | Led部品およびその製造方法 |
JP2006351895A (ja) * | 2005-06-17 | 2006-12-28 | Koito Mfg Co Ltd | 発光デバイス及びこれを用いた光源装置 |
JP2007005722A (ja) * | 2005-06-27 | 2007-01-11 | Toshiba Corp | 光半導体素子用外囲器およびそれを用いた光半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101681960A (zh) | 2010-03-24 |
TW200921945A (en) | 2009-05-16 |
KR20100028033A (ko) | 2010-03-11 |
CN101681960B (zh) | 2011-09-07 |
WO2008139981A1 (ja) | 2008-11-20 |
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Legal Events
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A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121120 |
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A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130312 |