JPWO2008117431A1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JPWO2008117431A1 JPWO2008117431A1 JP2009506144A JP2009506144A JPWO2008117431A1 JP WO2008117431 A1 JPWO2008117431 A1 JP WO2008117431A1 JP 2009506144 A JP2009506144 A JP 2009506144A JP 2009506144 A JP2009506144 A JP 2009506144A JP WO2008117431 A1 JPWO2008117431 A1 JP WO2008117431A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 67
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Abstract
Description
現在、チャネル領域に引っ張りストレスを与える応力膜は、シリコン窒化物等を堆積させた後に、例えば紫外線(UV)照射を行うことによって得られる。このような処理によって堆積させた膜を収縮させた場合に、以下のような問題が生じることがある。
上記の課題を解決するために、本発明では、以下の手段を採用する。
このような構成にすることにより、本発明によれば、チャネル領域に引っ張りストレスを与える応力膜が分断することを抑制し、信頼性の高い半導体装及びその製造方法を形成することが可能となる。
2…STI
3…素子形成領域
4…不連続面
8…クラック
19、29…チャネル領域
10a、10b、10c、10d…nチャネル型MOSトランジスタ
11,21…ウェル領域
12a、12b、22a、22b…ゲート絶縁膜
13a、13b、13c、13d…ゲート電極
14a、14b、14c、14d…サイドウォール
15a、15b、15c、15d…ゲート電極部(nチャネルMOSトランジスタのゲート電極部)
16、26…エクステンション領域
17、27…ソース・ドレイン領域
18、28…シリサイド層
30〜34、40…応力膜
31a、32a、60a…シリコン窒化膜
37…レジスト
39、49…絶縁膜
50…層間絶縁膜
60…膜
−半導体装置の構造−
図1は、実施例1における半導体装置の概略構造を説明する図である。図1に示されるように、シリコン基板1は、STI2によって複数の素子形成領域3に分離される。分離された各素子形成領域3には、ウェル領域11と、nチャネル型MOS(Metal Oxide Semiconductor)トランジスタ10a〜10dとがそれぞれ形成されている。また、nチャネル型MOSトランジスタ10a〜10dを覆うように応力膜30が形成される。応力膜30の上には、CVDやスパッタリング等によって形成された層間絶縁膜50が形成されている。層間絶縁膜50は、例えば酸化シリコン(SiO2)等の材料から構成される。なお、応力膜30と層間絶縁膜50との間には、エッチングストッパ膜としての絶縁膜39が形成される。絶縁膜39は、例えば膜厚が25nmのプラズマTEOS(TetraEthOxySilane)膜である。
次に、図1に示した半導体装置を実際に製造する工程を以下に説明する。図2〜図11は、実施例1における半導体装置を製造する工程を、主な工程毎に示す図である。
本工程では、図2に示すように、シリコン基板1に、素子形成領域3を分離するSTI(Shallow Trench Isolation)2を形成する。なお、シリコン基板1としては、例えば、ホウ素(B)等のp型の不純物元素が微量にドープされたP型のシリコン基板が使用される。次に、STI2が形成されたシリコン基板1内に、ウェル領域11、21を形成する。ウェル領域11には、例えば、ホウ素(B)等のp型の不純物元素を注入し、ウェル領域21には、例えば、りん(P)又は砒素(As)等のn型の不純物元素を注入する。このようにしてp型のウェル領域11が形成された素子形成領域3には、nチャネル型のMOSトランジスタが形成され、n型のウェル領域21が形成された素子形成領域3には、pチャネル型のMOSトランジスタが、それぞれ形成される。
本工程では、図3に示すように、シリコン基板1の素子形成領域3に、nチャネル型MOSトランジスタ10a,10b及びpチャネル型MOSトランジスタ20a,20bをそれぞれ分離して形成する。これらnチャネル型MOSトランジスタ10a,10b及びpチャネル型MOSトランジスタ20a,20bは、例えば、以下に示すような通常のプロセスに従って形成される。このような隣り合ったnチャネル型MOSトランジスタ10a,10b及びpチャネル型MOSトランジスタ20a,20bを形成することによって、例えば、基本的なCMOS(Complementary Metal Oxide Semiconductor)構造が形成される。
本工程では、図4に示すように、ゲート電極13a,13b,23a,23bの表層およびソース・ドレイン領域17,27の表層に、シリサイド層18,28を形成する。
本工程では、図5に示すように、シリコン窒化膜(第1の絶縁膜)31aを成膜した後、シリコン窒化膜31aを収縮させて、第1の応力膜31を形成する。具体的には、先ず、ゲート15a,15b,25a,25bが形成されたシリコン基板1の全面に亘って、窒化シリコン(SiNやSi3N4)等のシリコン窒化物を堆積させ、シリコン窒化膜31a(as-deposited膜)を成膜する。ここで、シリコン窒化膜31aの膜厚が、例えば5〜60nmになるように、より具体的には、例えば23nmになるように、シリコン窒化物を堆積する。このように、シリコン窒化膜31aは、シリコン窒化物を主とした材料により構成される絶縁膜である。
・シラン系ガス流量 5〜50sccm
・アンモニアガス流量 500〜10000sccm
・キャリアガスの流量 500〜10000sccm
・成膜する際の圧力 0.1〜400Toorの
・成膜温度 200℃〜450℃(200℃以上450℃以下の範囲)
ここで、シリコン窒化膜31aは、不連続面が形成されない膜厚に調整されることが望ましい。
・チャンバ圧力 0.1Torrから400Torr
・UVランプの強度 50〜1000MW/cm2
・UVランプの照射温度 200〜500℃(200℃以上500℃以下の範囲)
・UVランプの照射時間 1〜30分
本工程では、工程4と同様の処理を行う。図6に示すように、第1の応力膜31上にシリコン窒化膜(第2の絶縁膜)32aを成膜した後、シリコン窒化膜32aを収縮させて、第2の応力膜32を形成する。なお、シリコン窒化膜32aを構成する材料及びシリコン窒化膜32aの膜厚についても、シリコン窒化膜31aと同様とする。
本工程では、図7及び図8に示すように、工程5と同様の処理を2回繰り返し、第3の応力膜33及び第4の応力膜34を形成する。第3の応力膜33及び第4の応力膜34には、それぞれ、第1の応力膜と同様、1500〜2000MPa程度の収縮力が生じる。そして、第1の応力膜31〜第4の応力膜32に生じた収縮力が合わさり、シリコン基板1に形成されたMOSトランジスタのチャネル領域19,29のシリコン結晶に対して、強い引っ張りストレスFt3或いはFt4を生じさせる。ここで、シリコン基板1のシリコン結晶を歪ませるための引っ張りストレスは、応力膜が厚くなるほど大きな値になるから、Ft1<Ft2<Ft3<Ft4の関係となる。なお、第3の応力膜33及び第4の応力膜34の膜厚は、紫外線照射により、それぞれ、紫外線照射前と比較して5〜20%程度収縮する。
更には、トランジスタに近い側に形成される応力膜の膜厚が、トランジスタから遠い側に形成される応力膜よりも薄い方が望ましい。より望ましくは、トランジスタに最も近い側に配置される応力膜の膜厚が、他の応力膜よりも薄い方が望ましい。具体的には、例えば、第1の応力膜31の膜厚が最も薄い場合である。このような条件で応力膜を形成した場合、シリコン窒化物が堆積された直後、すなわち、シリコン窒化膜が成膜された時点で、当該シリコン窒化膜に不連続面が生じ難い傾向になる。そのため、収縮時に発生する応力膜の分断がより確実に抑制される
本工程では、図9に示すように、pチャネル型MOSトランジスタ20a,20bが形成された領域の応力膜30を除去する。具体的には、先ず、応力膜30上に、エッチングストッパ膜としての絶縁膜39を形成する。絶縁膜39は、例えば膜厚が25nmのプラズマTEOS(TetraEthOxySilane)膜である。次に、絶縁膜30の上にレジスト37を形成した後、レジスト37をパターニングし、nチャネル型MOSトランジスタ10a,10bが形成された領域のレジスト37を残す。次に、エッチング等の処理により、pチャネル型MOSトランジスタ20a,20bが形成された領域の応力膜30を除去する。
本工程では、図10に示すように、絶縁膜39が形成されたシリコン基板1上に応力膜(第5の応力膜)40と、エッチングストッパ膜としての絶縁膜49とを成膜する。具体的には、例えばプラズマCVDを用いて、絶縁膜39上に炭素(C)が混入されたシリコン窒化物を堆積させ、応力膜40を成膜する。プラズマCVDを行う際に使用するガスとしては、例えば、シランガス(SiH4)、アンモニアガス(NH3)、及び、炭素を混合させたガスを用いる。このように、応力膜40は、例えば炭素が混入されたシリコン窒化物を主とする材料からなるシリコン窒化膜である。炭素が混入されたシリコン窒化膜は、成膜された時点で、MOSトランジスタのチャネル領域29のシリコン結晶に対して、圧縮ストレスFt8を生じさせる。次に、応力膜40上に、エッチングストッパ膜としての絶縁膜49を形成する。絶縁膜49は、例えば膜厚が25nmのプラズマTEOS膜である。
本工程では、図11に示すように、nチャネル型MOSトランジスタ10a,10bが形成された領域の応力膜40及び絶縁膜49を除去した後、層間絶縁膜50を形成する。具体的には、先ず、pチャネル型MOSトランジスタ20a,20bが形成された領域に、図示しないレジストを形成する。次に、当該レジストをパターニングし、当該レジストのうち、pチャネル型MOSトランジスタ20a,20bが形成された領域の部分を残す。除去する。その後、エッチング等の処理を行い、nチャネル型MOSトランジスタ10a,10bが形成された領域の応力膜40及び絶縁膜49を除去する。次に、応力膜30,絶縁膜39,応力膜40,絶縁膜49等が形成された基板1上に、例えばCVDにより層間絶縁膜50を形成する。なお、層間絶縁膜50は、例えばSiO2等の材料から構成される。
(1)nチャネル型MOSトランジスタ10a,10bが形成された領域において、応力膜30の分断が抑制されるとともに、nチャネル型MOSトランジスタ10a,10bのチャネル領域に強い引っ張りストレスを加えることが可能になる。
(2)pチャネル型MOSトランジスタ20a,20bが形成された領域において、シリコン基板表面へのダメージが抑制される。
次に、実施例1の変形例を説明する。この変形例は、シリコン窒化膜を収縮させる工程において、紫外線照射を行う代わりにプラズマ照射を行った例であり、更には、紫外線照射に加えてプラズマ照射を行った例である。紫外線照射に加えてプラズマ照射を行なう場合、どちらを先に行っても良い。どちらの順序で行っても、シリコン窒化膜を収縮させる効果が得られる。プラズマ照射は窒化膜中に含まれる水素(H)を放出させる効果があると考えられており、本実施例では、プラズマ照射を紫外線照射による膜のシュリンクをアシストするものとして用いている。実施例2は、実施例1の工程4〜工程7において、紫外線照射を行なう前にプラズマ照射を行った例である。なお、それ以外は、実施例1と同様である。
・窒素或いはアンモニア等のキャリアガスの流量 500〜10000sccm
・成膜する際の圧力 0.1〜400Toor
次に、プラズマに晒したシリコン窒化膜の上から、紫外線(UV)を照射する。
以下に、実施例1、実施例2、比較例の方法で半導体装置を形成し、クラックが生じる程度を検証した結果を示す。比較例としては、図12〜図15に示したような方法で、応力膜60を有する半導体装置を形成した。
Claims (12)
- シリコン基板にnチャネル型電界効果トランジスタを形成する工程と、
前記電界効果トランジスタを覆う絶縁膜を成膜する第1の工程と、
前記絶縁膜を収縮させる第2の工程とを有し、
前記第1の工程と前記第2の工程とを複数回繰り返す
ことを特徴とする半導体装置の製造方法。 - 前記絶縁膜は、5〜60nmの膜厚である
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第1の工程において、
化学的気相成長法を用いてシリコン窒化物を堆積させることにより、前記絶縁膜を成膜する
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記化学的気相成長法は、シラン系ガスとアンモニアガスを混合させたガスを用いて行われる
ことを特徴とする請求項3に記載の半導体装置の製造方法。 - 前記化学的気相成長法は、200〜450℃の成膜温度で行われる
ことを特徴とする請求項3に記載の半導体装置の製造方法。 - 前記第2の工程において、
前記絶縁膜に紫外線を照射することにより前記絶縁膜を収縮させる
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第2の工程において、
前記絶縁膜に対して、更にプラズマ照射を行なう
ことを特徴とする請求項6に記載の半導体装置の製造方法。 - 前記プラズマは、窒素プラズマ、水素プラズマ、アンモニアプラズマの何れかである
ことを特徴とする請求項7記載の半導体装置の製造方法。 - シリコン基板にnチャネル型電界効果トランジスタを形成する工程と、
前記電界効果トランジスタを覆う第1の絶縁膜を成膜した後に、前記第1の絶縁膜を収縮させる工程と、
前記第1の絶縁膜上に第2の絶縁膜を成膜し、前記第2の絶縁膜を収縮させる工程とを備えることを特徴とする半導体装置の製造方法。 - 前記第1の絶縁膜は、前記第2の絶縁膜より薄い
ことを特徴とする請求項9に記載の半導体装置の製造方法。 - シリコン基板にnチャネル型電界効果トランジスタが形成された半導体装置において、
前記電界効果トランジスタを覆うように形成され、前記電界効果トランジスタのチャネル領域に歪みを与える第1の応力膜と、
前記第1の応力膜上に積層され、前記電界効果トランジスタのチャネル領域に歪みを与える第2の応力膜と
を有することを特徴とする半導体装置。 - 前記第1の応力膜は前記第2の応力膜より薄い
ことを特徴とする請求項11に記載半導体装置。
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2007
- 2007-03-27 WO PCT/JP2007/056369 patent/WO2008117431A1/ja active Application Filing
- 2007-03-27 JP JP2009506144A patent/JP5310543B2/ja not_active Expired - Fee Related
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2009
- 2009-09-28 US US12/567,972 patent/US8604552B2/en not_active Expired - Fee Related
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US20120322272A1 (en) | 2012-12-20 |
WO2008117431A1 (ja) | 2008-10-02 |
US20100012991A1 (en) | 2010-01-21 |
JP5310543B2 (ja) | 2013-10-09 |
US8604552B2 (en) | 2013-12-10 |
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