JPWO2008018399A1 - Method for modifying surface of polyimide resin layer and method for producing metal-clad laminate - Google Patents
Method for modifying surface of polyimide resin layer and method for producing metal-clad laminate Download PDFInfo
- Publication number
- JPWO2008018399A1 JPWO2008018399A1 JP2008528805A JP2008528805A JPWO2008018399A1 JP WO2008018399 A1 JPWO2008018399 A1 JP WO2008018399A1 JP 2008528805 A JP2008528805 A JP 2008528805A JP 2008528805 A JP2008528805 A JP 2008528805A JP WO2008018399 A1 JPWO2008018399 A1 JP WO2008018399A1
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- Prior art keywords
- layer
- polyimide resin
- amino
- resin layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 158
- 239000009719 polyimide resin Substances 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- -1 amino compound Chemical class 0.000 claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000001035 drying Methods 0.000 claims abstract description 20
- 239000002798 polar solvent Substances 0.000 claims abstract description 18
- 230000004048 modification Effects 0.000 claims abstract description 11
- 238000012986 modification Methods 0.000 claims abstract description 11
- 238000007740 vapor deposition Methods 0.000 claims abstract description 8
- 239000011888 foil Substances 0.000 claims description 36
- 238000009832 plasma treatment Methods 0.000 claims description 31
- 150000004982 aromatic amines Chemical class 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 12
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 10
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 260
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 70
- 239000000853 adhesive Substances 0.000 abstract description 37
- 230000001070 adhesive effect Effects 0.000 abstract description 37
- 239000011889 copper foil Substances 0.000 abstract description 33
- 238000004381 surface treatment Methods 0.000 abstract description 11
- 239000002344 surface layer Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000000725 suspension Substances 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 description 37
- 239000010949 copper Substances 0.000 description 37
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 36
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 26
- 239000000758 substrate Substances 0.000 description 26
- 239000010408 film Substances 0.000 description 22
- 239000011347 resin Substances 0.000 description 22
- 229920005989 resin Polymers 0.000 description 22
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- 239000010935 stainless steel Substances 0.000 description 15
- 229910001220 stainless steel Inorganic materials 0.000 description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 13
- 125000003277 amino group Chemical group 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000006087 Silane Coupling Agent Substances 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 125000003118 aryl group Chemical group 0.000 description 10
- 150000004985 diamines Chemical class 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- QQLZTRHXUSFZOM-UHFFFAOYSA-N 6-amino-1h-1,3,5-triazine-2,4-dithione Chemical compound NC1=NC(=S)NC(=S)N1 QQLZTRHXUSFZOM-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000007664 blowing Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920005575 poly(amic acid) Polymers 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 4
- DVNYTAVYBRSTGK-UHFFFAOYSA-N 5-aminoimidazole-4-carboxamide Chemical compound NC(=O)C=1N=CNC=1N DVNYTAVYBRSTGK-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000010953 base metal Substances 0.000 description 4
- ZVSKZLHKADLHSD-UHFFFAOYSA-N benzanilide Chemical compound C=1C=CC=CC=1C(=O)NC1=CC=CC=C1 ZVSKZLHKADLHSD-UHFFFAOYSA-N 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 125000005462 imide group Chemical group 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000002715 modification method Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 3
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 238000006358 imidation reaction Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000003495 polar organic solvent Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- WYWHKKSPHMUBEB-UHFFFAOYSA-N tioguanine Chemical compound N1C(N)=NC(=S)C2=C1N=CN2 WYWHKKSPHMUBEB-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- YTCGLFCOUJIOQH-UHFFFAOYSA-N 1,3,4-oxadiazole-2,5-diamine Chemical compound NC1=NN=C(N)O1 YTCGLFCOUJIOQH-UHFFFAOYSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 2
- YZVWKHVRBDQPMQ-UHFFFAOYSA-N 1-aminopyrene Chemical compound C1=C2C(N)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 YZVWKHVRBDQPMQ-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 description 2
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 2
- BWAPJIHJXDYDPW-UHFFFAOYSA-N 2,5-dimethyl-p-phenylenediamine Chemical compound CC1=CC(N)=C(C)C=C1N BWAPJIHJXDYDPW-UHFFFAOYSA-N 0.000 description 2
- MJAVQHPPPBDYAN-UHFFFAOYSA-N 2,6-dimethylbenzene-1,4-diamine Chemical compound CC1=CC(N)=CC(C)=C1N MJAVQHPPPBDYAN-UHFFFAOYSA-N 0.000 description 2
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 2
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 2
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 2
- CEPWHUGCPFOBHV-UHFFFAOYSA-N 3-(1-phenylcyclohexa-2,4-dien-1-yl)oxyaniline Chemical group NC=1C=C(OC2(CC=CC=C2)C2=CC=CC=C2)C=CC=1 CEPWHUGCPFOBHV-UHFFFAOYSA-N 0.000 description 2
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 2
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 2
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 2
- POXPSTWTPRGRDO-UHFFFAOYSA-N 3-[4-(3-aminophenyl)phenyl]aniline Chemical group NC1=CC=CC(C=2C=CC(=CC=2)C=2C=C(N)C=CC=2)=C1 POXPSTWTPRGRDO-UHFFFAOYSA-N 0.000 description 2
- MFTFTIALAXXIMU-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C(C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MFTFTIALAXXIMU-UHFFFAOYSA-N 0.000 description 2
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 2
- NQZOFDAHZVLQJO-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=CC(OC=4C=C(N)C=CC=4)=CC=3)=CC=2)=C1 NQZOFDAHZVLQJO-UHFFFAOYSA-N 0.000 description 2
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 2
- FYLGFBUSMXTESP-UHFFFAOYSA-N 3-[4-[9-[4-(3-aminophenoxy)phenyl]fluoren-9-yl]phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 FYLGFBUSMXTESP-UHFFFAOYSA-N 0.000 description 2
- CUYKNJBYIJFRCU-UHFFFAOYSA-N 3-aminopyridine Chemical compound NC1=CC=CN=C1 CUYKNJBYIJFRCU-UHFFFAOYSA-N 0.000 description 2
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 2
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- IBWPRENZRPOZQN-UHFFFAOYSA-N 4-(1-phenylcyclohexa-2,4-dien-1-yl)oxyaniline Chemical group NC1=CC=C(OC2(CC=CC=C2)C2=CC=CC=C2)C=C1 IBWPRENZRPOZQN-UHFFFAOYSA-N 0.000 description 2
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 2
- JSKKUFIMCFTTRV-UHFFFAOYSA-N 4-(4-phenylphenoxy)aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC=CC=2)C=C1 JSKKUFIMCFTTRV-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical group CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 2
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 2
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 2
- KWOIWTRRPFHBSI-UHFFFAOYSA-N 4-[2-[3-[2-(4-aminophenyl)propan-2-yl]phenyl]propan-2-yl]aniline Chemical compound C=1C=CC(C(C)(C)C=2C=CC(N)=CC=2)=CC=1C(C)(C)C1=CC=C(N)C=C1 KWOIWTRRPFHBSI-UHFFFAOYSA-N 0.000 description 2
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- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 1
- AVRVTTKGSFYCDX-UHFFFAOYSA-N perylene-1,2,7,8-tetracarboxylic acid Chemical compound C1=CC(C2=C(C(C(=O)O)=CC=3C2=C2C=CC=3)C(O)=O)=C3C2=C(C(O)=O)C(C(O)=O)=CC3=C1 AVRVTTKGSFYCDX-UHFFFAOYSA-N 0.000 description 1
- RVRYJZTZEUPARA-UHFFFAOYSA-N phenanthrene-1,2,9,10-tetracarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C3=C(C(O)=O)C(C(=O)O)=CC=C3C2=C1 RVRYJZTZEUPARA-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- RHPBLLCTOLJFPH-UHFFFAOYSA-N piperidin-2-ylmethanamine Chemical compound NCC1CCCCN1 RHPBLLCTOLJFPH-UHFFFAOYSA-N 0.000 description 1
- IPOVLZSJBYKHHU-UHFFFAOYSA-N piperidin-3-ylmethanamine Chemical compound NCC1CCCNC1 IPOVLZSJBYKHHU-UHFFFAOYSA-N 0.000 description 1
- LTEKQAPRXFBRNN-UHFFFAOYSA-N piperidin-4-ylmethanamine Chemical compound NCC1CCNCC1 LTEKQAPRXFBRNN-UHFFFAOYSA-N 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XFTQRUTUGRCSGO-UHFFFAOYSA-N pyrazin-2-amine Chemical compound NC1=CN=CC=N1 XFTQRUTUGRCSGO-UHFFFAOYSA-N 0.000 description 1
- MFUFBSLEAGDECJ-UHFFFAOYSA-N pyren-2-ylamine Natural products C1=CC=C2C=CC3=CC(N)=CC4=CC=C1C2=C43 MFUFBSLEAGDECJ-UHFFFAOYSA-N 0.000 description 1
- HDOUGSFASVGDCS-UHFFFAOYSA-N pyridin-3-ylmethanamine Chemical compound NCC1=CC=CN=C1 HDOUGSFASVGDCS-UHFFFAOYSA-N 0.000 description 1
- TXQWFIVRZNOPCK-UHFFFAOYSA-N pyridin-4-ylmethanamine Chemical compound NCC1=CC=NC=C1 TXQWFIVRZNOPCK-UHFFFAOYSA-N 0.000 description 1
- LJXQPZWIHJMPQQ-UHFFFAOYSA-N pyrimidin-2-amine Chemical compound NC1=NC=CC=N1 LJXQPZWIHJMPQQ-UHFFFAOYSA-N 0.000 description 1
- OYRRZWATULMEPF-UHFFFAOYSA-N pyrimidin-4-amine Chemical compound NC1=CC=NC=N1 OYRRZWATULMEPF-UHFFFAOYSA-N 0.000 description 1
- NGXSWUFDCSEIOO-UHFFFAOYSA-N pyrrolidin-3-amine Chemical compound NC1CCNC1 NGXSWUFDCSEIOO-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006798 ring closing metathesis reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- YLJREFDVOIBQDA-UHFFFAOYSA-N tacrine Chemical compound C1=CC=C2C(N)=C(CCCC3)C3=NC2=C1 YLJREFDVOIBQDA-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229960003087 tioguanine Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/095—Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
- H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
ポリイミド樹脂層の接着力を簡便な表面処理により飛躍的に向上させる表面処理方法に関する。この表面処理方法によれば、ファインピッチ形成に適した低粗度銅箔においても接着力を向上させることができるため、高密度のプリント配線板及びHDDサスペンション用基板に用いられる金属張積層板を得ることができる。この表面処理は、a)ポリイミド樹脂層の表面側の層をプラズマ処理してプラズマ処理層面を形成する工程と、b)該プラズマ処理層面にアミノ化合物を含む極性溶媒溶液を塗布後、乾燥及び熱処理して表面改質層を形成する工程とを備える。この表面処理で得られる表面に改質層を有するポリイミド樹脂層は、この表面に熱圧着又は蒸着により金属層を形成することにより配線基板用の金属張積層板を得るために適する。The present invention relates to a surface treatment method for dramatically improving the adhesion of a polyimide resin layer by a simple surface treatment. According to this surface treatment method, since the adhesive force can be improved even in a low-roughness copper foil suitable for fine pitch formation, a metal-clad laminate used for high-density printed wiring boards and HDD suspension boards can be obtained. Obtainable. The surface treatment includes a) a step of plasma-treating a surface layer of the polyimide resin layer to form a plasma-treated layer surface, and b) drying and heat treatment after applying a polar solvent solution containing an amino compound to the plasma-treated layer surface. And forming a surface modification layer. The polyimide resin layer having a modified layer on the surface obtained by this surface treatment is suitable for obtaining a metal-clad laminate for a wiring board by forming a metal layer on this surface by thermocompression bonding or vapor deposition.
Description
本発明は、ポリイミド樹脂層の表面改質方法及び金属箔上にポリイミド樹脂層が積層する金属張積層板の製造方法に関し、より詳しくは、プリント配線板用に適したポリイミド樹脂層の表面改質方法及び金属張積層板の製造方法に関する。 The present invention relates to a surface modification method for a polyimide resin layer and a method for producing a metal-clad laminate in which a polyimide resin layer is laminated on a metal foil, and more particularly, a surface modification for a polyimide resin layer suitable for a printed wiring board. The present invention relates to a method and a method for producing a metal-clad laminate.
電子機器の電子回路には、絶縁材と導電材からなる積層板を回路加工したプリント配線板が使用されている。プリント配線板は、絶縁基板の表面(及び内部)に、電気設計に基づく導体パターンを、導電性材料で形成固着したものであり、基材となる絶縁樹脂の種類によって、板状のリジットプリント配線板と、柔軟性に富んだフレキシブルプリント配線板とに大別される。フレキシブルプリント配線板は、可撓性を持つことが特徴であり、常時屈曲を繰り返すような可動部では接続用必需部品となっている。また、フレキシブルプリント配線板は、電子機器内で折り曲げた状態で収納することも可能であるために、省スペース配線材料としても用いられる。フレキシブルプリント配線板の材料となるフレキシブル基板は、基材となる絶縁樹脂にはポリイミドエステルやポリイミド樹脂が多く用いられているが、使用量としては耐熱性のあるポリイミド樹脂が圧倒的に多い。一方、導電材には導電性の点から一般に銅箔が用いられている。 In an electronic circuit of an electronic device, a printed wiring board obtained by processing a laminated board made of an insulating material and a conductive material is used. A printed wiring board is formed by fixing a conductive pattern based on electrical design on the surface (and inside) of an insulating substrate with a conductive material. Depending on the type of insulating resin used as the base material, a plate-shaped rigid printed wiring is used. It is roughly divided into a board and a flexible printed wiring board which is rich in flexibility. The flexible printed wiring board is characterized by having flexibility, and is a necessary part for connection in a movable part that constantly bends. In addition, since the flexible printed wiring board can be stored in a bent state in an electronic device, it is also used as a space-saving wiring material. In a flexible substrate as a material for a flexible printed wiring board, polyimide ester or polyimide resin is often used as an insulating resin as a base material, but the amount of heat-resistant polyimide resin is overwhelmingly large. On the other hand, copper foil is generally used as the conductive material from the viewpoint of conductivity.
フレキシブル基板は、その構造から3層フレキシブル基板と、2層フレキシブル基板がある。3層フレキシブル基板は、ポリイミドなどのベースフィルムと銅箔をエポキシ樹脂やアクリル樹脂などの接着剤で貼り合わせて、ベースフィルム層(絶縁樹脂層の主層)、接着剤層、銅箔層の3層で構成される積層板である。一方、2層フレキシブル基板は、接着剤を使用せずに、ベースフィルム層、銅箔層の2層で構成される積層板である。2層フレキシブル基板は、エポキシ樹脂やアクリル樹脂などの耐熱性の低い接着剤層を含まないので、信頼性が高く、回路全体の薄膜化が可能でありその使用量が増加している。一方、別の観点からすると、フレキシブル基板のベースフィルム層は、熱膨張係数が低いことがカールの発生を防止するために望まれているが、熱膨張係数が低いポリイミド樹脂は接着性が劣るため、接着剤を使用せずに全部をポリイミド樹脂とする場合は、良接着性のポリイミド樹脂層を接着面側に接着性付与層として設けることが必要であった。また、両面に銅箔層を有するフレキシブル基板も知られており、片面に銅箔層を有する片面フレキシブル基板を製造したのち、2枚の片面フレキシブル基板を重ね合わせて積層する方法又は片面フレキシブル基板に銅箔を重ね合わせて積層する方法などが知られている。この場合も、接着剤層又は接着性付与層を含まないフレキシブル基板が望まれている。 The flexible substrate includes a three-layer flexible substrate and a two-layer flexible substrate because of its structure. A three-layer flexible substrate is made by bonding a base film such as polyimide and a copper foil with an adhesive such as an epoxy resin or an acrylic resin to form a base film layer (main layer of an insulating resin layer), an adhesive layer, and a copper foil layer. It is a laminated board composed of layers. On the other hand, the two-layer flexible substrate is a laminated plate composed of two layers of a base film layer and a copper foil layer without using an adhesive. Since the two-layer flexible substrate does not include an adhesive layer with low heat resistance such as an epoxy resin or an acrylic resin, the two-layer flexible substrate has high reliability, and the entire circuit can be thinned, and the amount of use is increasing. On the other hand, from a different viewpoint, the base film layer of the flexible substrate is desired to have a low thermal expansion coefficient in order to prevent curling, but a polyimide resin having a low thermal expansion coefficient is inferior in adhesiveness. When using all the polyimide resin without using an adhesive, it was necessary to provide a good adhesion polyimide resin layer as an adhesion-imparting layer on the adhesive surface side. In addition, a flexible substrate having a copper foil layer on both sides is also known, and after manufacturing a single-sided flexible substrate having a copper foil layer on one side, a method of laminating two single-sided flexible substrates on each other or a single-sided flexible substrate A method of laminating copper foils is known. Also in this case, a flexible substrate that does not include an adhesive layer or an adhesion-imparting layer is desired.
近年、電子機器における高性能化、高機能化の要求が高まっており、それに伴って電子デバイスに使用される回路基板材料であるプリント配線版の高密度化が望まれている。プリント配線版を高密度化するためには、回路配線の幅と間隔を小さくする、すなわちファインピッチ化する必要がある。プリント配線板を高密度化、ファインピッチ化するためには、表面粗度の低い銅箔を使用することが望まれてきた。しかしながら、表面粗度の低い銅箔は、アンカー効果、すなわち絶縁樹脂層の銅箔表面の凸凹への食い込みが小さいため、機械的な接着強度が得られず、そのため絶縁樹脂に対する接着力が低くなるという問題があった。そこで、表面粗度の低い銅箔と絶縁樹脂との接着力を高めることが課題となっている。 In recent years, there has been an increasing demand for higher performance and higher functionality in electronic devices, and accordingly, higher density of printed wiring plates, which are circuit board materials used in electronic devices, is desired. In order to increase the density of the printed wiring board, it is necessary to reduce the width and interval of the circuit wiring, that is, to achieve a fine pitch. In order to increase the density and fine pitch of a printed wiring board, it has been desired to use a copper foil having a low surface roughness. However, a copper foil having a low surface roughness has a small anchoring effect, that is, the biting of the insulating resin layer into the irregularities on the surface of the copper foil, so that the mechanical adhesive strength cannot be obtained, and therefore the adhesive strength to the insulating resin is low. There was a problem. Therefore, it is an issue to increase the adhesive force between the copper foil having a low surface roughness and the insulating resin.
ポリイミド樹脂は一般に接着性が劣ることが知られている。また、プリント配線板に使用される積層板のベースフィルム層はカールの発生防止のため、熱膨張係数の低いポリイミド樹脂層であることが望まれるが、低熱膨張性と接着性との間には相反する関係がある。そこで、接着強度を向上させるため、従来、様々なポリイミドフィルムの表面改質技術が報告されている。その一例として、プラズマ処理による表面改質は、生産性、安定性、コストの面だけでなく、環境保全性の面でも有利な技術である。プラズマ処理によるポリイミドフィルムの表面改質方法としては、例えば、特開平5−222219号公報、特開平8−12779号公報、特開平11−209488号公報、特開2004−51712号公報、特開2006−7518号公報などで具体例が開示されている。しかしながら、これらの従来技術では、表面粗度の低い銅箔とポリイミド樹脂層との接着力は満足しうるものは得られない。 Polyimide resins are generally known to have poor adhesion. In addition, the base film layer of the laminate used for the printed wiring board is desired to be a polyimide resin layer having a low thermal expansion coefficient in order to prevent the occurrence of curling. There are conflicting relationships. In order to improve the adhesive strength, various surface modification techniques for polyimide films have been reported. As an example, surface modification by plasma treatment is an advantageous technique not only in terms of productivity, stability and cost, but also in terms of environmental conservation. Examples of the method for modifying the surface of a polyimide film by plasma treatment include, for example, JP-A-5-222219, JP-A-8-12779, JP-A-11-209488, JP-A-2004-51712, JP-A-2006. Specific examples are disclosed in Japanese Patent Publication No. 7518. However, these conventional techniques cannot obtain a satisfactory adhesive force between the copper foil having a low surface roughness and the polyimide resin layer.
また、コスト面で有利な湿式エッチングによる表面改質方法も注目されつつあるが、一般に、プラズマ処理のような乾式エッチングによる表面改質方法に比べて接着性が十分ではないため、この点の更なる改良が必要とされていた。このような湿式エッチングによる表面改質方法としては、例えば、特開平11−49880号公報が挙げられる。これには、脂肪族第一級アミンを含む極性溶媒中で処理したポリイミドと金属との間にポリイミド接着剤を介して熱圧着する方法が開示されている。しかしながら、この方法は、ポリイミド接着剤層を設ける必要があり、絶縁樹脂層が厚くなるという問題があった。 In addition, a surface modification method by wet etching, which is advantageous in terms of cost, is attracting attention, but in general, adhesion is not sufficient as compared with a surface modification method by dry etching such as plasma treatment, so this point is further improved. There was a need for improvement. As such a surface modification method by wet etching, for example, JP-A-11-49880 can be cited. This discloses a method of thermocompression bonding between a polyimide treated in a polar solvent containing an aliphatic primary amine and a metal via a polyimide adhesive. However, this method has a problem that it is necessary to provide a polyimide adhesive layer, and the insulating resin layer becomes thick.
本発明は、ポリイミド樹脂層の表面を改質して接着性を向上させることを目的とする。また、ベースフィルム層として適する低熱膨張性のポリイミド樹脂層の表面を改質して接着性を向上させ、接着性付与層となる接着性ポリイミド樹脂層又は接着剤層の省略を可能とすることを目的とする。他の目的は、極薄の接着性層を有する銅張積層板の製造方法を提供すると共に、プリント基板のファインピッチ化にも応える十分な接着強度を担保しつつ、絶縁樹脂層の極薄化にも対応できる銅張積層板の製造方法を提供することを目的とする。 An object of the present invention is to improve the adhesion by modifying the surface of a polyimide resin layer. In addition, the surface of a low thermal expansion polyimide resin layer suitable as a base film layer is modified to improve adhesiveness, and the adhesive polyimide resin layer or adhesive layer that becomes an adhesion-imparting layer can be omitted. Objective. Another object is to provide a method for producing a copper clad laminate having an extremely thin adhesive layer, and to ensure that the insulating resin layer is extremely thin while ensuring sufficient adhesive strength to meet the fine pitch of printed circuit boards. It aims at providing the manufacturing method of the copper clad laminated board which can respond also to this.
上記目的を達成するため、本発明者等が検討を行ったところ、プラズマ処理による表面改質と湿式表面処理方法を適切に組み合わせることにより、これを用いたポリイミド樹脂層は、ポリイミド樹脂層の厚みを殆ど変化させることもなく、銅箔との接着強度の高い、優れた銅張積層板を提供できることを見出した。 In order to achieve the above-mentioned object, the present inventors have studied, and by appropriately combining surface modification by plasma treatment and a wet surface treatment method, the polyimide resin layer using this has the thickness of the polyimide resin layer. It was found that an excellent copper-clad laminate having high adhesive strength with the copper foil can be provided without substantially changing the thickness.
本発明は、a)ポリイミド樹脂層の表面側の層をプラズマ処理してプラズマ処理層面を形成する工程と、b)該プラズマ処理層面にアミノ化合物を含む極性溶媒溶液を塗布後、乾燥及び熱処理して表面改質を形成する工程とを備えたことを特徴とするポリイミド樹脂層の表面に改質層を形成する方法に関する。 The present invention includes: a) a step of plasma-treating a surface layer of a polyimide resin layer to form a plasma-treated layer surface; and b) applying a polar solvent solution containing an amino compound to the plasma-treated layer surface, followed by drying and heat treatment. And forming a modified layer on the surface of the polyimide resin layer.
また、本発明は、I)ポリイミド樹脂層の表面に改質層を形成する工程Iと、II)該改質層の表面に金属層を形成する工程IIとを備えた金属張積層板の製造方法において、工程Iが、a)ポリイミド樹脂層の表面側の層をプラズマ処理してプラズマ処理層面を形成する工程と、b)該プラズマ処理層面にアミノ化合物を含む極性溶媒溶液を塗布後、乾燥及び熱処理して表面改質層を形成する工程とを備えたことを特徴とする金属張積層板の製造方法に関する。 The present invention also provides a metal-clad laminate comprising: I) a step I for forming a modified layer on the surface of the polyimide resin layer; and II) a step II for forming a metal layer on the surface of the modified layer. In the method, Step I includes a) a step of plasma-treating a surface layer of the polyimide resin layer to form a plasma-treated layer surface, and b) drying after applying a polar solvent solution containing an amino compound to the plasma-treated layer surface. And a step of forming a surface-modified layer by heat treatment, and a method for producing a metal-clad laminate.
上記アミノ化合物としては、芳香族アミン又は脂肪族アミン、好ましくは第1級又は第2級のアミノ基を有する芳香族アミン又は脂肪族アミンが挙げられる。芳香族アミンとしては、アミノ基置換の含窒素複素環化合物が挙げられる。 Examples of the amino compound include aromatic amines or aliphatic amines, preferably aromatic amines or aliphatic amines having a primary or secondary amino group. Aromatic amines include amino-substituted nitrogen-containing heterocyclic compounds.
上記工程I)は、d)ポリイミド樹脂層の表面改質層に金属箔を重ね合わせ、熱圧着する工程、又はe)ポリイミド樹脂層の表面改質層に蒸着により金属薄膜層を形成する工程から選ばれることがよい。 Step I) includes d) a step of superimposing a metal foil on the surface modification layer of the polyimide resin layer and thermocompression bonding, or e) a step of forming a metal thin film layer by vapor deposition on the surface modification layer of the polyimide resin layer. It should be chosen.
以下、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.
本発明で用いられるポリイミド樹脂層は特に限定されるものではなく、ポリイミド樹脂からなるフィルム(シート)であってもよく、銅箔、ガラス板、樹脂フィルム等の基材に積層された状態のポリイミド樹脂層であってもよい。なお、ここでいう基材はポリイミド樹脂層が積層されるシート状の樹脂又は金属箔等をいう。しかし、ポリイミド樹脂層の少なくとも片面は表面層として存在する。また、ポリイミド樹脂層の厚みは、3〜100μm、好ましくは3〜50μmの範囲にある。上記ポリイミド樹脂層は、表面改質されることにより、当初のポリイミド樹脂層(未改質のポリイミド樹脂層)と改質層の少なくとも2層を有するものとなる。なお、改質層はポリイミド樹脂層の表面に形成され、アミノ化合物の溶液をコートする操作を含む処理をすることにより形成されるので、コート層又はアミノ化合物のコート層ともいう。 The polyimide resin layer used in the present invention is not particularly limited, and may be a film (sheet) made of polyimide resin, and is a polyimide laminated on a substrate such as a copper foil, a glass plate, or a resin film. It may be a resin layer. The base material here refers to a sheet-like resin or metal foil on which a polyimide resin layer is laminated. However, at least one surface of the polyimide resin layer exists as a surface layer. The thickness of the polyimide resin layer is in the range of 3 to 100 μm, preferably 3 to 50 μm. The polyimide resin layer has at least two layers of an initial polyimide resin layer (unmodified polyimide resin layer) and a modified layer by being surface-modified. The modified layer is formed on the surface of the polyimide resin layer and is formed by a treatment including an operation of coating an amino compound solution, and is also referred to as a coat layer or an amino compound coat layer.
ポリイミド樹脂層を形成するポリイミド樹脂としては、いわゆるポリイミド樹脂を含めて、ポリアミドイミド、ポリベンズイミダゾール、ポリイミドエステル、ポリエーテルイミド、ポリシロキサンイミド等の構造中にイミド基を有する耐熱性樹脂をいう。また、市販のポリイミド樹脂又はポリイミドフィルムも利用可能である。 The polyimide resin that forms the polyimide resin layer refers to a heat-resistant resin having an imide group in the structure such as polyamideimide, polybenzimidazole, polyimide ester, polyetherimide, polysiloxaneimide, including so-called polyimide resin. A commercially available polyimide resin or polyimide film can also be used.
ポリイミド樹脂層の中でも、低接着性であって、低熱膨張性のポリイミド樹脂層に対し、本発明の方法は好適である。具体的には、熱線膨張係数が1×10−6 〜30×10−6(1/K)、好ましくは1×10−6 〜25×10−6(1/K)、より好ましくは15×10−6 〜25×10−6(1/K)である低熱膨張性のポリイミド樹脂層に適用すると大きな効果が得られる。しかし、上記熱線膨張係数を超えるポリイミド樹脂層にも適用可能であり、接着性を向上させる。Among the polyimide resin layers, the method of the present invention is suitable for a polyimide resin layer having low adhesion and low thermal expansion. Specifically, the coefficient of thermal expansion is 1 × 10 −6 to 30 × 10 −6 (1 / K), preferably 1 × 10 −6 to 25 × 10 −6 (1 / K), and more preferably 15 ×. When applied to a low thermal expansion polyimide resin layer of 10 −6 to 25 × 10 −6 (1 / K), a great effect is obtained. However, it can also be applied to a polyimide resin layer that exceeds the thermal linear expansion coefficient, and improves adhesion.
ポリイミド樹脂層に使用されるポリイミド樹脂としては、一般式(1)で現される構造単位を有するポリイミド樹脂が好ましい。
但し、Ar1は式(2)又は式(3)で表される4価の芳香族基を示し、Ar3は式(4)又は式(5)で表される2価の芳香族基を示し、R1は独立に炭素数1〜6の1価の炭化水素基又はアルコキシ基を示し、X及びYは独立に単結合又は炭素数1〜15の2価の炭化水素基、O、S、CO、SO、SO2若しくはCONHから選ばれる2価の基を示し、nは独立に0〜4の整数を示し、qは構成単位の存在モル比を示し、0.1〜1.0の範囲である。As a polyimide resin used for a polyimide resin layer, the polyimide resin which has a structural unit represented by General formula (1) is preferable.
However, Ar 1 represents a tetravalent aromatic group represented by formula (2) or formula (3), and Ar 3 represents a divalent aromatic group represented by formula (4) or formula (5). R 1 independently represents a monovalent hydrocarbon group or alkoxy group having 1 to 6 carbon atoms, X and Y independently represent a single bond or a divalent hydrocarbon group having 1 to 15 carbon atoms, O, S , CO, SO, SO 2 or CONH represents a divalent group, n independently represents an integer of 0 to 4, q represents an abundance ratio of structural units, and ranges from 0.1 to 1.0.
上記構造単位は、単独重合体中に存在しても、共重合体の構造単位として存在してもよい。構造単位を複数有する共重合体である場合は、ブロックとして存在しても、ランダムに存在してもよい。このような構造単位を有するポリイミド樹脂の中で、好適に利用できるポリイミド樹脂は非熱可塑性のポリイミド樹脂である。 The structural unit may be present in the homopolymer or may be present as a structural unit of the copolymer. In the case of a copolymer having a plurality of structural units, it may exist as a block or may exist randomly. Among the polyimide resins having such a structural unit, a polyimide resin that can be suitably used is a non-thermoplastic polyimide resin.
ポリイミド樹脂は、一般に、ジアミンと酸二無水物とを反応させて製造されるので、ジアミンと酸二無水物を説明することにより、ポリイミド樹脂の具体例が理解される。上記一般式(1)において、Ar3はジアミンの残基ということができ、Ar1は酸無水物の残基ということができるので、好ましいポリイミド樹脂をジアミンと酸無水物により説明する。しかし、この方法によって得られるポリイミド樹脂に限定されない。Since a polyimide resin is generally produced by reacting a diamine and an acid dianhydride, a specific example of the polyimide resin can be understood by explaining the diamine and the acid dianhydride. In the above general formula (1), Ar 3 can be referred to as a diamine residue, and Ar 1 can be referred to as an acid anhydride residue. Therefore, a preferred polyimide resin will be described using a diamine and an acid anhydride. However, it is not limited to the polyimide resin obtained by this method.
ジアミンとしては、例えば、4,4’-ジアミノジフェニルエーテル、2’-メトキシ-4,4’-ジアミノベンズアニリド、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、2,2’-ビス[4-(4-アミノフェノキシ)フェニル]プロパン、2,2’-ジメチル-4,4’-ジアミノビフェニル、3,3’-ジヒドロキシ-4,4’-ジアミノビフェニル、4,4’-ジアミノベンズアニリド等が好ましく挙げられる。 Examples of the diamine include 4,4′-diaminodiphenyl ether, 2′-methoxy-4,4′-diaminobenzanilide, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-amino). Phenoxy) benzene, 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxy-4,4'- Preferred examples include diaminobiphenyl and 4,4′-diaminobenzanilide.
また、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]プロパン、ビス[4-(4-アミノフェノキシ)フェニル]スルホン、ビス[4-(3−アミノフェノキシ)フェニル]スルホン、ビス[4-(4-アミノフェノキシ)]ビフェニル、ビス[4-(3-アミノフェノキシ)ビフェニル、ビス[1-(4-アミノフェノキシ)]ビフェニル、ビス[1-(3-アミノフェノキシ)]ビフェニル、ビス[4-(4-アミノフェノキシ)フェニル]メタン、ビス[4-(3-アミノフェノキシ)フェニル]メタン、ビス[4-(4-アミノフェノキシ)フェニル]エーテル、ビス[4-(3-アミノフェノキシ)フェニル]エーテル、ビス[4-(4-アミノフェノキシ)]ベンゾフェノン、ビス[4-(3-アミノフェノキシ)]ベンゾフェノン、ビス[4,4'-(4-アミノフェノキシ)]ベンズアニリド、ビス[4,4'-(3-アミノフェノキシ)]ベンズアニリド、9,9-ビス[4-(4-アミノフェノキシ)フェニル]フルオレン、9,9-ビス[4-(3-アミノフェノキシ)フェニル]フルオレン等が好ましく挙げられる。 Also, 2,2-bis- [4- (3-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (4-aminophenoxy)] biphenyl, bis [4- (3-aminophenoxy) biphenyl, bis [1- (4-aminophenoxy)] biphenyl, bis [1- (3-aminophenoxy)] biphenyl, Bis [4- (4-aminophenoxy) phenyl] methane, bis [4- (3-aminophenoxy) phenyl] methane, bis [4- (4-aminophenoxy) phenyl] ether, bis [4- (3-amino Phenoxy) phenyl] ether, bis [4- (4-aminophenoxy)] benzophenone, bis [4- (3-aminophenoxy)] benzophenone, bis [4,4 ′-(4-aminophenoxy)] benzanilide, bis [ Four, 4 ′-(3-aminophenoxy)] benzanilide, 9,9-bis [4- (4-aminophenoxy) phenyl] fluorene, 9,9-bis [4- (3-aminophenoxy) phenyl] fluorene and the like are preferable. Can be mentioned.
更に、2,2−ビス-[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、4,4’-メチレンジ-o-トルイジン、4,4’-メチレンジ-2,6-キシリジン、4,4’-メチレン-2,6-ジエチルアニリン、4,4’-ジアミノジフェニルプロパン、3,3’-ジアミノジフェニルプロパン、4,4’-ジアミノジフェニルエタン、3,3’-ジアミノジフェニルエタン、4,4’-ジアミノジフェニルメタン、3,3’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルスルフィド、3,3’-ジアミノジフェニルスルフィド、4,4’-ジアミノジフェニルスルホン、3,3’-ジアミノジフェニルスルホン、4,4’-ジアミノジフェニルエーテル、3,3-ジアミノジフェニルエーテル、3,4'-ジアミノジフェニルエーテル、ベンジジン、3,3’-ジアミノビフェニル、3,3’-ジメチル-4,4’-ジアミノビフェニル、3,3’-ジメトキシベンジジン、4,4”-ジアミノ-p-テルフェニル、3,3”-ジアミノ-p-テルフェニル、m-フェニレンジアミン、p-フェニレンジアミン、2,6-ジアミノピリジン、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、4,4'-[1,4-フェニレンビス(1-メチルエチリデン)]ビスアニリン、4,4'-[1,3-フェニレンビス(1-メチルエチリデン)]ビスアニリン、ビス(p-アミノシクロヘキシル)メタン、ビス(p-β-アミノ-t-ブチルフェニル)エーテル、ビス(p-β-メチル-δ-アミノペンチル)ベンゼン、p-ビス(2-メチル-4-アミノペンチル)ベンゼン、p-ビス(1,1-ジメチル-5-アミノペンチル)ベンゼン、1,5-ジアミノナフタレン、2,6-ジアミノナフタレン、2,4-ビス(β-アミノ-t-ブチル)トルエン、2,4-ジアミノトルエン、m-キシレン-2,5-ジアミン、p-キシレン-2,5-ジアミン、m-キシリレンジアミン、p-キシリレンジアミン、2,6-ジアミノピリジン、2,5-ジアミノピリジン、2,5-ジアミノ-1,3,4-オキサジアゾール、ピペラジン等が挙げられる。 Further, 2,2-bis- [4- (4-aminophenoxy) phenyl] hexafluoropropane, 2,2-bis- [4- (3-aminophenoxy) phenyl] hexafluoropropane, 4,4′-methylenedi -o-toluidine, 4,4'-methylenedi-2,6-xylidine, 4,4'-methylene-2,6-diethylaniline, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylethane, 3,3'-diaminodiphenylethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl Sulfide, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, benzidine, 3,3'- Aminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 4,4 "-diamino-p-terphenyl, 3,3" -diamino-p-terphenyl, m-phenylenediamine, p-phenylenediamine, 2,6-diaminopyridine, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4 '-[1 , 4-phenylenebis (1-methylethylidene)] bisaniline, 4,4 '-[1,3-phenylenebis (1-methylethylidene)] bisaniline, bis (p-aminocyclohexyl) methane, bis (p-β- Amino-t-butylphenyl) ether, bis (p-β-methyl-δ-aminopentyl) benzene, p-bis (2-methyl-4-aminopentyl) benzene, p-bis (1,1-dimethyl-5 -Aminopentyl) benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis (β-amino-t-butyl) ) Toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-2,5-diamine, m-xylylenediamine, p-xylylenediamine, 2,6-diaminopyridine, 2 , 5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole, piperazine and the like.
酸二無水物としては、例えば、無水ピロメリット酸、3,3’,4,4’-ビフェニルテトラカルボン酸二無水物、3,3’,4,4’-ジフェニルスルフォンテトラカルボン酸二無水物、4,4’-オキシジフタル酸無水物が好ましく挙げられる。 Examples of the acid dianhydride include pyromellitic anhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-diphenylsulfone tetracarboxylic dianhydride 4,4′-oxydiphthalic anhydride is preferred.
また、2,2',3,3'-、2,3,3',4'-又は3,3',4,4'-ベンゾフェノンテトラカルボン酸二無水物、2,3',3,4’-ビフェニルテトラカルボン酸二無水物、2,2',3,3'-ビフェニルテトラカルボン酸二無水物、2,3',3,4'-ジフェニルエーテルテトラカルボン酸二無水物、ビス(2,3-ジカルボキシフェニル)エーテル二無水物等が好ましく挙げられる。また、3,3'',4,4''-、2,3,3'',4''-又は2,2'',3,3''-p-テルフェニルテトラカルボン酸二無水物、2,2-ビス(2,3-又は3,4-ジカルボキシフェニル)-プロパン二無水物、ビス(2,3-又は3.4-ジカルボキシフェニル)メタン二無水物、ビス(2,3-又は3,4-ジカルボキシフェニル)スルホン二無水物、1,1-ビス(2,3-又は3,4-ジカルボキシフェニル)エタン二無水物等が好ましく挙げられる。 Also, 2,2 ', 3,3'-, 2,3,3', 4'- or 3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride, 2,3', 3,4 '-Biphenyltetracarboxylic dianhydride, 2,2', 3,3'-biphenyltetracarboxylic dianhydride, 2,3 ', 3,4'-diphenyl ether tetracarboxylic dianhydride, bis (2, Preferable examples include 3-dicarboxyphenyl) ether dianhydride. Also 3,3``, 4,4 ''-, 2,3,3``, 4 ''-or 2,2 '', 3,3 ''-p-terphenyltetracarboxylic dianhydride 2,2-bis (2,3- or 3,4-dicarboxyphenyl) -propane dianhydride, bis (2,3- or 3.4-dicarboxyphenyl) methane dianhydride, bis (2,3- Alternatively, 3,4-dicarboxyphenyl) sulfone dianhydride, 1,1-bis (2,3- or 3,4-dicarboxyphenyl) ethane dianhydride and the like are preferable.
更に、1,2,7,8-、1,2,6,7-又は1,2,9,10-フェナンスレン-テトラカルボン酸二無水物、2,3,6,7−アントラセンテトラカルボン酸二無水物、2,2-ビス(3,4-ジカルボキシフェニル)テトラフルオロプロパン二無水物、2,3,5,6-シクロヘキサン二無水物、2,3,6,7-ナフタレンテトラカルボン酸二無水物、1,2,5,6-ナフタレンテトラカルボン酸二無水物、1,4,5,8-ナフタレンテトラカルボン酸二無水物、4,8-ジメチル-1,2,3,5,6,7-ヘキサヒドロナフタレン-1,2,5,6-テトラカルボン酸二無水物、2,6-又は2,7-ジクロロナフタレン-1,4,5,8-テトラカルボン酸二無水物、2,3,6,7-(又は1,4,5,8-)テトラクロロナフタレン-1,4,5,8-(又は2,3,6,7-)テトラカルボン酸二無水物、2,3,8,9-、3,4,9,10-、4,5,10,11-又は5,6,11,12-ペリレン-テトラカルボン酸二無水物、シクロペンタン-1,2,3,4-テトラカルボン酸二無水物、ピラジン-2,3,5,6-テトラカルボン酸二無水物、ピロリジン-2,3,4,5-テトラカルボン酸二無水物、チオフェン-2,3,4,5-テトラカルボン酸二無水物、4,4-ビス(2,3-ジカルボキシフェノキシ)ジフェニルメタン二無水物等が挙げられる。 In addition, 1,2,7,8-, 1,2,6,7- or 1,2,9,10-phenanthrene-tetracarboxylic dianhydride, 2,3,6,7-anthracene tetracarboxylic acid Anhydride, 2,2-bis (3,4-dicarboxyphenyl) tetrafluoropropane dianhydride, 2,3,5,6-cyclohexane dianhydride, 2,3,6,7-naphthalene tetracarboxylic acid Anhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6 , 7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 2,6- or 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2 , 3,6,7- (or 1,4,5,8-) tetrachloronaphthalene-1,4,5,8- (or 2,3,6,7-) tetracarboxylic dianhydride, 2, 3,8,9-, 3,4,9,10-, 4,5,10,11- or 5,6,11,12-perylene-tetracarboxylic dianhydride, cyclopentane-1,2,3 , 4-Tetracarboxylic dianhydride, Razine-2,3,5,6-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride 4,4-bis (2,3-dicarboxyphenoxy) diphenylmethane dianhydride and the like.
ジアミン、酸二無水物はそれぞれ、その1種のみを使用してもよく2種以上を併用して使用することもできる。また、上記一般式(1)のAr3又はAr1を与えないその他のジアミン又は酸二無水物を使用する場合は、その他のジアミン又は酸二無水物の使用割合はそれぞれ全ジアミン又は全酸二無水物の90モル%以下、好ましくは50モル%以下、より好ましくは20モル%以下とすることがよい。ジアミン及び酸二無水物の種類や、2種以上のジアミン又は酸二無水物を使用する場合のそれぞれのモル比を選定することにより、熱膨張性、接着性、ガラス転移点(Tg)等を制御することができる。Each of diamine and acid dianhydride may be used alone or in combination of two or more. Similarly, the general formula (1) does not give the Ar 3 or Ar 1 when using other diamine or dianhydride, other diamine or diacid proportion each total diamine or total diacid anhydrides 90 mol% or less of the anhydride, preferably 50 mol% or less, more preferably 20 mol% or less. By selecting the type of diamine and acid dianhydride, or the molar ratios when using two or more diamines or acid dianhydrides, thermal expansion, adhesion, glass transition point (Tg), etc. Can be controlled.
ポリイミド樹脂層を製造する方法は特に限定されないが、例えば、ポリイミド樹脂の前駆体であるポリアミド酸の樹脂溶液を基材上に塗布した後に乾燥、イミド化して基材上にポリイミド樹脂層を形成せしめる方法が適する。ポリアミド酸の樹脂溶液を基材上に塗布する方法としては特に制限されず、コンマ、ダイ、ナイフ、リップ等のコーターにて塗布することが可能である。 The method for producing the polyimide resin layer is not particularly limited. For example, after applying a polyamic acid resin solution, which is a polyimide resin precursor, on the substrate, it is dried and imidized to form the polyimide resin layer on the substrate. The method is suitable. The method for applying the polyamic acid resin solution on the substrate is not particularly limited, and it can be applied by a coater such as a comma, a die, a knife, or a lip.
また、乾燥、熱処理の方法も特に制限されず、例えば、80〜400℃の温度条件で1〜60分間加熱するといった熱処理が好適に採用される。このような熱処理を行うことで、ポリアミック酸の脱水閉環が進行するため、基材上にポリイミド樹脂層を形成させることができる。基材上にポリイミド樹脂層を形成させたポリイミド樹脂層はそのまま使用してもよく、剥がすなどして使用してもよい。 Moreover, the method of drying and heat treatment is not particularly limited, and for example, heat treatment such as heating for 1 to 60 minutes at a temperature of 80 to 400 ° C. is suitably employed. By performing such heat treatment, dehydration and ring closure of the polyamic acid proceeds, so that a polyimide resin layer can be formed on the substrate. The polyimide resin layer in which the polyimide resin layer is formed on the substrate may be used as it is, or may be used after being peeled off.
ポリイミド樹脂層は、単層のみから形成されるものでも、複数層からなるものでもよい。ポリイミド樹脂層を複数層とする場合、異なる構成成分からなるポリイミド樹脂層の上に他のポリイミド樹脂を順次塗布して形成することができる。ポリイミド樹脂層が3層以上からなる場合、同一の構成のポリイミド樹脂を2回以上使用してもよい。層構造が簡単である2層又は単層、特に単層は、工業的に有利に得ることができる。また、ポリイミド樹脂層の厚みは3〜100μm、好ましくは3〜50μm、より好ましくは5〜30μmの範囲にあることがよい。 The polyimide resin layer may be formed of only a single layer or may be formed of a plurality of layers. In the case where a plurality of polyimide resin layers are used, other polyimide resins can be sequentially formed on a polyimide resin layer made of different components. When the polyimide resin layer is composed of three or more layers, the polyimide resin having the same configuration may be used twice or more. Two layers or a single layer, in particular a single layer, having a simple layer structure can be advantageously obtained industrially. The polyimide resin layer has a thickness of 3 to 100 μm, preferably 3 to 50 μm, more preferably 5 to 30 μm.
本発明のポリイミド樹脂層の表面に改質層(コート層)を形成する方法では、a)ポリイミド樹脂層の表面側の層をプラズマ処理してプラズマ処理層面を形成する工程(工程a)と、b)該プラズマ処理層面にアミノ化合物を含む極性溶媒溶液を塗布、乾燥及び熱処理して表面改質層を形成する工程(工程b)とを備える。 In the method of forming a modified layer (coat layer) on the surface of the polyimide resin layer of the present invention, a) a step of forming a plasma treatment layer surface by plasma treatment of the surface side of the polyimide resin layer (step a); b) A step of applying a polar solvent solution containing an amino compound to the surface of the plasma treatment layer, drying and heat treatment to form a surface modified layer (step b).
工程aにおいて、プラズマ処理の方法はグロー放電などの公知の方法が採用される。また、プラズマ処理の条件は任意に選択することが可能であるが、工程bで使用するアミノ化合物が、芳香族アミンである場合、放電出力は20〜10000W・min/m2が好ましく、より好ましくは1500〜8000W・min/m2、更に好ましくは3000〜6000W・min/m2がよい。また、工程bで使用するアミノ化合物が、脂肪族アミンである場合、放電出力は、300〜30000W・min/m2が好ましく、より好ましくは2000〜20000W・min/m2、更に好ましくは5000〜18000W・min/m2がよい。圧力はいずれの場合においても1Torr以下が好ましい。このような条件でプラズマ処理することにより、ポリイミド樹脂層の表面層樹脂のイミド環の開裂が起こり、改質されたプラズマ処理層面が形成される。処理層面ではイミド環の開裂等によりカルボキシル基などの反応性が高い官能基が生成し、これが工程bで使用するアミノ化合物のアミノ基とのカップリング効果を向上させると考えられる。In step a, a known method such as glow discharge is employed as the plasma treatment method. The plasma treatment conditions can be arbitrarily selected. When the amino compound used in step b is an aromatic amine, the discharge output is preferably 20 to 10,000 W · min / m 2 , more preferably. Is preferably 1500 to 8000 W · min / m 2 , more preferably 3000 to 6000 W · min / m 2 . Further, the amino compound used in step b is an aliphatic amine, the discharge output is preferably 300~30000W · min / m 2, more preferably 2000~20000W · min / m 2, more preferably 5000 to 18000W · min / m 2 is good. In any case, the pressure is preferably 1 Torr or less. By performing plasma treatment under such conditions, cleavage of the imide ring of the surface layer resin of the polyimide resin layer occurs, and a modified plasma treatment layer surface is formed. It is considered that a functional group having high reactivity such as a carboxyl group is generated by cleavage of the imide ring or the like on the treated layer surface, and this improves the coupling effect with the amino group of the amino compound used in step b.
プラズマ処理における雰囲気ガスは、酸素、アルゴン、ヘリウム、窒素及びこれらの混合気体から選ばれるガスであることが好ましいが、特に好ましくは、酸素、アルゴン、ヘリウム又はこれらの混合気体である。 The atmospheric gas in the plasma treatment is preferably a gas selected from oxygen, argon, helium, nitrogen, and a mixed gas thereof, and particularly preferably oxygen, argon, helium, or a mixed gas thereof.
工程bにおいて、上記プラズマ処理層面にアミノ化合物を含む極性溶媒溶液(アミノ化合物の溶液という)を塗布、乾燥及び熱処理してアミノ化合物のコート層を形成する。アミノ化合物としては、芳香族アミン、脂肪族アミンが好ましく挙げられる。ここで、塗布とはアミノ化合物の溶液の皮膜を形成させることをいう。 In step b, a polar solvent solution containing an amino compound (referred to as an amino compound solution) is applied to the surface of the plasma treatment layer, dried and heat-treated to form an amino compound coat layer. Preferred examples of the amino compound include aromatic amines and aliphatic amines. Here, coating means forming a film of an amino compound solution.
芳香族アミンとしては、第1級又は第2級のアミノ基を有する芳香族アミンであることがよく、特に、第1級のアミノ基が芳香族環に置換した芳香族アミンがよい。そして、分子内にケイ素元素を有しないことが好ましい。アミノ基の数は1〜5、好ましくは1〜3、より好ましくは1もしくは2である。芳香族アミンの分子量は40〜1000、好ましくは50〜600、より好ましくは60〜500であることがよい。また、芳香族アミンは、少なくとも1個の芳香族環に少なくとも1個のアミノ基を有する化合物であり、芳香族環はアミノ基以外の置換基で置換されていても、いなくてもよい。芳香族環としては、ベンゼン環、ナフタレン環等の縮合環がある。複数個の芳香族環を有する化合物としては、ビフェニル環等の他に、Ar-X-Ar、Ar-Y-Ar-X-Ar-Y-Ar(ただし、Arはベンゼン環等の芳香族環、X及びYは独立にCO、O、S、SO、SO2、CONH、CnH2n等の2価の基)にアミノ基が置換した化合物がある。アミノ基以外の置換基としては、例えば炭素数1〜18のアルキル基(例えば、メチル、エチル、プロピル等)、炭素数6〜13の芳香族基(例えば、フェニル)、炭素数7〜12のアリールアルキル基(例えば、ベンジル)等が挙げられる。ヒドロキシル基も芳香族環の置換基として利用できる。芳香族環をヒドロキシル基で置換した化合物の1例はアミノフェノールである。更に、炭素数10〜20の縮合環系も本発明の芳香族アミンとして利用できる。本発明に利用可能な縮合環系の1例はジアミノナフタレンである。The aromatic amine is preferably an aromatic amine having a primary or secondary amino group, particularly an aromatic amine in which the primary amino group is substituted with an aromatic ring. And it is preferable not to have a silicon element in a molecule | numerator. The number of amino groups is 1-5, preferably 1-3, more preferably 1 or 2. The molecular weight of the aromatic amine is 40 to 1000, preferably 50 to 600, and more preferably 60 to 500. An aromatic amine is a compound having at least one amino group in at least one aromatic ring, and the aromatic ring may or may not be substituted with a substituent other than an amino group. Examples of the aromatic ring include condensed rings such as a benzene ring and a naphthalene ring. Compounds having a plurality of aromatic rings include Ar-X-Ar, Ar-Y-Ar-X-Ar-Y-Ar (where Ar is an aromatic ring such as a benzene ring) in addition to a biphenyl ring, etc. , X and Y are independently compounds in which an amino group is substituted on a divalent group such as CO, O, S, SO, SO 2 , CONH and C n H 2n ). Examples of the substituent other than the amino group include an alkyl group having 1 to 18 carbon atoms (for example, methyl, ethyl, propyl, etc.), an aromatic group having 6 to 13 carbon atoms (for example, phenyl), and 7 to 12 carbon atoms. An arylalkyl group (for example, benzyl) etc. are mentioned. Hydroxyl groups can also be used as aromatic ring substituents. An example of a compound having an aromatic ring substituted with a hydroxyl group is aminophenol. Furthermore, a condensed ring system having 10 to 20 carbon atoms can be used as the aromatic amine of the present invention. One example of a fused ring system that can be used in the present invention is diaminonaphthalene.
芳香族アミンの具体例を次に示すが、これには限定されない。また、芳香族アミンは1種類以上を使用することができる。 Although the specific example of an aromatic amine is shown next, it is not limited to this. One or more aromatic amines can be used.
アニリン、トルイジン、アミノナフタレン、アミノビフェニル、2,2-ビス-[4-(4-アミノフェノキシ)フェニル]プロパン、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]プロパン、ビス[4-(4-アミノフェノキシ)フェニル]スルホン、ビス[4-(3−アミノフェノキシ)フェニル]スルホン、ビス[4-(4-アミノフェノキシ)]ビフェニル、ビス[4-(3-アミノフェノキシ)ビフェニル、ビス[1-(4-アミノフェノキシ)]ビフェニル、ビス[1-(3-アミノフェノキシ)]ビフェニル、ビス[4-(4-アミノフェノキシ)フェニル]メタン、ビス[4-(3-アミノフェノキシ)フェニル]メタン、ビス[4-(4-アミノフェノキシ)フェニル]エーテル、ビス[4-(3-アミノフェノキシ)フェニル]エーテル、ビス[4-(4-アミノフェノキシ)]ベンゾフェノン、ビス[4-(3-アミノフェノキシ)]ベンゾフェノン、ビス[4,4'-(4-アミノフェノキシ)]ベンズアニリド、ビス[4,4'-(3-アミノフェノキシ)]ベンズアニリド、9,9-ビス[4-(4-アミノフェノキシ)フェニル]フルオレン、9,9-ビス[4-(3-アミノフェノキシ)フェニル]フルオレン、2,2−ビス-[4-(4-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、2,2-ビス-[4-(3-アミノフェノキシ)フェニル]ヘキサフルオロプロパン、4,4’-メチレンジ-o-トルイジン、4,4’-メチレンジ-2,6-キシリジン、4,4’-メチレン-2,6-ジエチルアニリン、4,4’-ジアミノジフェニルプロパン、3,3’-ジアミノジフェニルプロパン、4,4’-ジアミノジフェニルエタン。 Aniline, toluidine, aminonaphthalene, aminobiphenyl, 2,2-bis- [4- (4-aminophenoxy) phenyl] propane, 2,2-bis- [4- (3-aminophenoxy) phenyl] propane, bis [ 4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (4-aminophenoxy)] biphenyl, bis [4- (3-aminophenoxy) biphenyl Bis [1- (4-aminophenoxy)] biphenyl, bis [1- (3-aminophenoxy)] biphenyl, bis [4- (4-aminophenoxy) phenyl] methane, bis [4- (3-aminophenoxy) ) Phenyl] methane, bis [4- (4-aminophenoxy) phenyl] ether, bis [4- (3-aminophenoxy) phenyl] ether, bis [4- (4-aminophenoxy)] benzophenone Bis [4- (3-aminophenoxy)] benzophenone, bis [4,4 '-(4-aminophenoxy)] benzanilide, bis [4,4'-(3-aminophenoxy)] benzanilide, 9,9-bis [4- (4-aminophenoxy) phenyl] fluorene, 9,9-bis [4- (3-aminophenoxy) phenyl] fluorene, 2,2-bis- [4- (4-aminophenoxy) phenyl] hexafluoro Propane, 2,2-bis- [4- (3-aminophenoxy) phenyl] hexafluoropropane, 4,4'-methylenedi-o-toluidine, 4,4'-methylenedi-2,6-xylidine, 4,4 '-Methylene-2,6-diethylaniline, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4,4'-diaminodiphenylethane.
3,3’-ジアミノジフェニルエタン、4,4’-ジアミノジフェニルメタン、3,3’-ジアミノジフェニルメタン、4,4’-ジアミノジフェニルスルフィド、3,3’-ジアミノジフェニルスルフィド、4,4’-ジアミノジフェニルスルホン、3,3’-ジアミノジフェニルスルホン、4,4’-ジアミノジフェニルエーテル、3,3-ジアミノジフェニルエーテル、3,4'-ジアミノジフェニルエーテル、ベンジジン、3,3’-ジアミノビフェニル、3,3’-ジメチル-4,4’-ジアミノビフェニル、3,3’-ジメトキシベンジジン、4,4”-ジアミノ-p-テルフェニル、3,3''-ジアミノ-p-テルフェニル、m-フェニレンジアミン、p-フェニレンジアミン、2,6-ジアミノピリジン、1,4-ビス(4-アミノフェノキシ)ベンゼン、1,3-ビス(4-アミノフェノキシ)ベンゼン、4,4'-[1,4-フェニレンビス(1-メチルエチリデン)]ビスアニリン、4,4'-[1,3-フェニレンビス(1-メチルエチリデン)]ビスアニリン、ビス(p-アミノシクロヘキシル)メタン、ビス(p-β-アミノ-t-ブチルフェニル)エーテル、ビス(p-β-メチル-δ-アミノペンチル)ベンゼン、p-ビス(2-メチル-4-アミノペンチル)ベンゼン、p-ビス(1,1-ジメチル-5-アミノペンチル)ベンゼン、1,5-ジアミノナフタレン、2,6-ジアミノナフタレン、2,4-ビス(β-アミノ-t-ブチル)トルエン、2,4-ジアミノトルエン、m-キシレン-2,5-ジアミン、p-キシレン-2,5-ジアミン、m-キシリレンジアミン、p-キシリレンジアミン。 3,3'-diaminodiphenylethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl Sulfone, 3,3'-diaminodiphenylsulfone, 4,4'-diaminodiphenyl ether, 3,3-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, benzidine, 3,3'-diaminobiphenyl, 3,3'-dimethyl -4,4'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 4,4 "-diamino-p-terphenyl, 3,3" -diamino-p-terphenyl, m-phenylenediamine, p-phenylene Diamine, 2,6-diaminopyridine, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 4,4 '-[1,4-phenylenebis (1- Methyl ethylidene)] bi Aniline, 4,4 '-[1,3-phenylenebis (1-methylethylidene)] bisaniline, bis (p-aminocyclohexyl) methane, bis (p-β-amino-t-butylphenyl) ether, bis (p -β-methyl-δ-aminopentyl) benzene, p-bis (2-methyl-4-aminopentyl) benzene, p-bis (1,1-dimethyl-5-aminopentyl) benzene, 1,5-diaminonaphthalene 2,6-diaminonaphthalene, 2,4-bis (β-amino-t-butyl) toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-2,5-diamine , M-xylylenediamine, p-xylylenediamine.
2,6-ジアミノピリジン、2,5-ジアミノピリジン、2,5-ジアミノ-1,3,4-オキサジアゾール、ピペラジン、5-アミノ-1H-テトラゾール、2-アミノ-1,3,5-トリアジン-4,6-ジチオール、3-アミノ-1,2,4-トリアジン、3-アミノ-1,2,4-トリアゾール、4-アミノ-1,2,4-トリアゾール、3-アミノ-1,2,4-トリアゾール-5-カルボン酸、3-アミノ-1,2,4-トリアゾール-5-チオール、2-アミノ-5-トリフルオロメチル-1,3,4-チアジアゾール、5-アミノインダゾール、4-アミノインドール、5-アミノインドール、3-アミノ-1H-イソインドール、1-アミノイソキノリン、5-アミノイソキノリン、3-アミノイソキサゾール、5-アミノ-2-メルカプトベンズイミダゾール、6-アミノ-2-メルカプトベンゾチアゾール、4-アミノ-6-メルカプトピラゾロ[3,4-d]ピリミジン、2-アミノ−4-メトキシベンゾチアゾール、3-アミノ-5-フェニルピラゾール、3-アミノ-1-フェニル-2-ピラゾリン-5-オン、2-アミノ-4-フェニル-5-テトラデシルチアゾール、2-アミノ-5-フェニル-1,3,4-チアジアゾール、2-アミノ-4-フェニルチアゾール、4-アミノ-5-フェニル-4H-1,2,4-トリアゾール-3-チオール、3-アミノフタルヒドラジン、2-アミノ-6-(メチルスルフォニル)ベンゾチアゾール、2-アミノ-4-メチルチアゾール、2-アミノ-5-(メチルチオ)-1,3,4-チアジアゾール、3-アミノ-5-メチルチオ-1H-1,2,4チアゾール、6-アミノ-1-メチルウラシル、3-アミノ-5-ニトロベンズイソチアゾール、9-アミノ-1,2,3,4-テトラヒドロアクリジン、9-アミノアクリジン、2-アミノ-1,3,4-チアジアゾール、5-アミノ-1,3,4-チアジアゾール-2-チオール、2-アミノチアゾール、2-アミノ-4-チアゾールアセチックアシッド、2-アミノ-2-チアゾリン、2-アミノ-6-チオシアネートベンゾチアゾール、DL-α-アミノ-2-チオフェンアセチックアシッド、3-アミノ-5-ヒドロキシピラゾール、2-アミノ-3-ヒドロキシピリジン、5-アミノ-8-ヒドロキシキノリン、2-アミノ-4-ヒドロキシ-6-トリフルオロメチルピリミジン、2-アミノイミダゾール、5-アミノイミダゾール-4-カルボキシアミド、4-アミノ-5-イミダゾールカルボキシアミド、2-アミノ-4,5-イミダゾールジカルボニトリル、4-アミノ-6-ヒドロキシ-2-メルカプトピリミジン、2-アミノ-4-ヒドロキシ-6-メチルピリミジン、2-アミノ-6-プリンチオール、アミノピラジン、3-アミノピラジン-2-カルボン酸、3-アミノピラゾール、3-アミノ-4-ピラゾールカルボニトリル、3-アミノ-4-ピラゾールカルボキシアミド、3-アミノ-4-ピラゾールカルボン酸、4-アミノピラゾロ[3,4−d]ピリミジン。 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole, piperazine, 5-amino-1H-tetrazole, 2-amino-1,3,5- Triazine-4,6-dithiol, 3-amino-1,2,4-triazine, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3-amino-1, 2,4-triazole-5-carboxylic acid, 3-amino-1,2,4-triazole-5-thiol, 2-amino-5-trifluoromethyl-1,3,4-thiadiazole, 5-aminoindazole, 4-aminoindole, 5-aminoindole, 3-amino-1H-isoindole, 1-aminoisoquinoline, 5-aminoisoquinoline, 3-aminoisoxazole, 5-amino-2-mercaptobenzimidazole, 6-amino- 2-mercaptobenzothiazole, 4-amino-6-mercaptopyrazolo [3,4-d] pyrimidine, 2-amino-4-methoxybenzothiazole, 3-amino -5-phenylpyrazole, 3-amino-1-phenyl-2-pyrazolin-5-one, 2-amino-4-phenyl-5-tetradecylthiazole, 2-amino-5-phenyl-1,3,4- Thiadiazole, 2-amino-4-phenylthiazole, 4-amino-5-phenyl-4H-1,2,4-triazole-3-thiol, 3-aminophthalhydrazine, 2-amino-6- (methylsulfonyl) benzo Thiazole, 2-amino-4-methylthiazole, 2-amino-5- (methylthio) -1,3,4-thiadiazole, 3-amino-5-methylthio-1H-1,2,4thiazole, 6-amino- 1-methyluracil, 3-amino-5-nitrobenzisothiazole, 9-amino-1,2,3,4-tetrahydroacridine, 9-aminoacridine, 2-amino-1,3,4-thiadiazole, 5- Amino-1,3,4-thiadiazole-2-thiol, 2-aminothiazole, 2-amino-4-thiazole acetic acid, 2-amino-2-thiazolyl 2-amino-6-thiocyanate benzothiazole, DL-α-amino-2-thiophene acetic acid, 3-amino-5-hydroxypyrazole, 2-amino-3-hydroxypyridine, 5-amino-8-hydroxyquinoline 2-amino-4-hydroxy-6-trifluoromethylpyrimidine, 2-aminoimidazole, 5-aminoimidazole-4-carboxamide, 4-amino-5-imidazolecarboxamide, 2-amino-4,5-imidazole Dicarbonitrile, 4-amino-6-hydroxy-2-mercaptopyrimidine, 2-amino-4-hydroxy-6-methylpyrimidine, 2-amino-6-purinethiol, aminopyrazine, 3-aminopyrazine-2-carboxylic acid Acid, 3-aminopyrazole, 3-amino-4-pyrazolecarbonitrile, 3-amino-4-pyrazolecarboxamide, 3-amino-4-pyrazolecarboxylic acid, 4-aminopyrazolo [3,4 d] pyrimidine.
1-アミノピレン、2-アミノピリジン、3-アミノピリジン、4-アミノピリジン、4-アミノ-5-(4-ピリジル)-4H-1,2,4-トリアゾール-3-チオール、2-アミノピリミジン、4-アミノピリミジン、N4-(2-アミノ-4-ピリミジニル)スルファニルアミド、3-アミノピロリジン、4-アミノキナリジン、3-アミノキノリン、3-アミノロダニン、1-(3-アミノプロピル)イミダゾール、2-アミノプリン、アデニン、4-(アミノメチル)ピペリジン、3-(アミノメチル)ピペリジン、2-(アミノメチル)ピペリジン、3-アミノ-5-メチルピラゾール、2-(アミノメチル)ピリジン、3-(アミノメチル)ピリジン、4-(アミノメチル)ピリジン、2-アミノ-4-メチルピリミジン、3-アミノ-2-メチル-4(3H)キナゾリノン、5-アミノ-2-メチルインドール、5-アミノ-3-メチルイソチアゾール、3-アミノ-5-メチルイソキサゾール、3-アミノ-2-メトキシジベンゾフラン、2-アミノ−α−(メトキシイミノ)-4-チアゾールアセチックアシッド、2-アミノ-4-メトキシ-6-メチルピリミジン、2-アミノ-4-メトキシ-6-メチル-1,3,5-トリアジン、3-アミノ-5-(4-メトキシフェニル)ピラゾール、5-アミノ-2-メトキシピリジン、4-アミノ-6-メトキシピリミジン、8-アミノ-6-メトキシキノリン、2-(アミノメチル)ベンズイミダゾール、2-アミノ-1-メチルベンズイミダゾール、アザアデニン、チオグアニン。これらを、芳香族アミンとして挙げることができる。1-aminopyrene, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 4-amino-5- (4-pyridyl) -4H-1,2,4-triazole-3-thiol, 2-aminopyrimidine, 4-aminopyrimidine, N 4 - (2-amino-4-pyrimidinyl) sulfanilamide, 3-aminopyrrolidine, 4-amino Kinari Jin, 3-aminoquinoline, 3-Aminorodanin, 1- (3-aminopropyl) imidazole, 2-aminopurine, adenine, 4- (aminomethyl) piperidine, 3- (aminomethyl) piperidine, 2- (aminomethyl) piperidine, 3-amino-5-methylpyrazole, 2- (aminomethyl) pyridine, 3- (Aminomethyl) pyridine, 4- (aminomethyl) pyridine, 2-amino-4-methylpyrimidine, 3-amino-2-methyl-4 (3H) quinazolinone, 5-amino-2-methylindole, 5-amino- 3-methylisothiazole, 3-a No-5-methylisoxazole, 3-amino-2-methoxydibenzofuran, 2-amino-α- (methoxyimino) -4-thiazole acetic acid, 2-amino-4-methoxy-6-methylpyrimidine, 2 -Amino-4-methoxy-6-methyl-1,3,5-triazine, 3-amino-5- (4-methoxyphenyl) pyrazole, 5-amino-2-methoxypyridine, 4-amino-6-methoxypyrimidine 8-amino-6-methoxyquinoline, 2- (aminomethyl) benzimidazole, 2-amino-1-methylbenzimidazole, azaadenine, thioguanine. These can be mentioned as aromatic amines.
上記芳香族アミンの中でも、アミノ基置換の含窒素複素環化合物が好ましく、あるいは水酸基若しくはメルカプト基が置換した芳香族アミノ化合物、又は水酸基若しくはメルカプト基が置換した含窒素複素環化合物が好ましい。このような芳香族アミンは、例えば、複素環を構成する窒素原子、又は置換基を構成する酸素原子若しくは硫黄原子を有することで、後の工程で形成される金属層との化学結合を強固にできると考えられる。具体例として、好ましくは、2-アミノ-1,3,5-トリアジン-4,6-ジチオール、4,5-ジアミノ-2,6-ジメルカプトピリミジン、5-アミノ-1,3,4-チアゾール-2-チオールが挙げられる。工程eを備える場合には、このような芳香族アミンを使用することで、例えばニクロム層のような下地金属層を設けることなく、銅薄膜層を直接形成する場合に、特に有効である。 Among the above aromatic amines, amino group-substituted nitrogen-containing heterocyclic compounds are preferable, or aromatic amino compounds substituted with hydroxyl groups or mercapto groups, or nitrogen-containing heterocyclic compounds substituted with hydroxyl groups or mercapto groups are preferable. Such an aromatic amine has, for example, a nitrogen atom constituting a heterocyclic ring, or an oxygen atom or sulfur atom constituting a substituent, thereby strengthening a chemical bond with a metal layer formed in a later step. It is considered possible. As specific examples, preferably 2-amino-1,3,5-triazine-4,6-dithiol, 4,5-diamino-2,6-dimercaptopyrimidine, 5-amino-1,3,4-thiazole -2-thiol. In the case where the step e is provided, the use of such an aromatic amine is particularly effective when a copper thin film layer is directly formed without providing a base metal layer such as a nichrome layer.
脂肪族アミンとしては、第1級又は第2級のアミノ基を有する脂肪族アミンであることがよい。特に、第1級のアミノ基を有する化合物がよい。そして、分子内にケイ素元素を有しないことが好ましい。アミノ基の数は1〜5、好ましくは1〜3、より好ましくは1もしくは2である。脂肪族アミンは10〜1000、好ましくは20〜500、より好ましくは30〜300の分子量をもつことがよい。また、脂肪族アミンは、アミノ基以外の置換基で置換されていても、いなくてもよい。脂肪族アミン1分子中に存在するアミノ基の数が1である場合には、アミノ基以外の置換基としては、例えば水酸基やメルカプト基等を有するものが好ましく、これらは後の工程で形成される金属層との化学結合を強固にできると考えられる。具体例としては、エタノールアミン、2−アミノエタンチオールが挙げられる。 The aliphatic amine is preferably an aliphatic amine having a primary or secondary amino group. In particular, a compound having a primary amino group is preferable. And it is preferable not to have a silicon element in a molecule | numerator. The number of amino groups is 1-5, preferably 1-3, more preferably 1 or 2. The aliphatic amine should have a molecular weight of 10 to 1000, preferably 20 to 500, more preferably 30 to 300. The aliphatic amine may or may not be substituted with a substituent other than an amino group. When the number of amino groups present in one molecule of an aliphatic amine is 1, substituents other than amino groups are preferably those having, for example, a hydroxyl group or a mercapto group, which are formed in a later step. It is considered that the chemical bond with the metal layer can be strengthened. Specific examples include ethanolamine and 2-aminoethanethiol.
脂肪族アミンの具体例を次に示すが、これらは1種類以上を使用することができる。 Although the specific example of an aliphatic amine is shown next, these can use 1 or more types.
エチレンジアミン、エタノールアミン、2-アミノエタンチオール、N-メチルエチレンジアミン、N-エチルエチレンジアミン、N-メチルエタノールアミン、asym-ジメチルエチレンジアミン、1-アミノ-3,3-ジエトキシプロパン、trans-4-アミノシクロヘキサノール、D-2-アミノ-1-ブタノール、L-2-アミノ-1-ブタノール、4-アミノ-1-ブタノール、4-アミノ-2-ブタノール、(R)-(-)-2-アミノブタン、(S)-(+)-2-アミノブタン、1-アミノ-2-プロパノール、3-アミノ-2-プロパノール、2-アミノ-1,3-プロパンジオール、3-アミノ-1,2-プロパンジオール、DL-2-アミノ-3-メチル-1-ブタノール、6-アミノ-2-メチル-2-ヘプタノール、メチルアミン、エチルアミン、ジメチルアミン、ジエチルアミン、ジエチレントリアミン等を挙げることができる。 Ethylenediamine, ethanolamine, 2-aminoethanethiol, N-methylethylenediamine, N-ethylethylenediamine, N-methylethanolamine, asym-dimethylethylenediamine, 1-amino-3,3-diethoxypropane, trans-4-aminocyclo Hexanol, D-2-amino-1-butanol, L-2-amino-1-butanol, 4-amino-1-butanol, 4-amino-2-butanol, (R)-(-)-2-aminobutane, (S)-(+)-2-aminobutane, 1-amino-2-propanol, 3-amino-2-propanol, 2-amino-1,3-propanediol, 3-amino-1,2-propanediol, DL-2-amino-3-methyl-1-butanol, 6-amino-2-methyl-2-heptanol, methylamine, ethylamine, dimethylamine, diethylamine, diethylenetriamine and the like can be mentioned.
アミノ化合物は極性溶媒の溶液として使用する。極性溶媒としては、アミノ化合物を溶解するものであれば特に限定されない。例えば、水、メタノール、エタノール、プロパノール、ブタノール等のアルコール類、アセトン、ジメチルケトン、メチルエチルケトン等のケトン類、テトラヒドロフラン等のエーテル類、N−メチルピロリドン、ジメチルアセトアミド、ジメチルホルムアミド等の3級アミン類、又はジメチルスルホキサイド等が挙げられ、これら1種又は2種以上併用して使用することができる。 The amino compound is used as a solution in a polar solvent. The polar solvent is not particularly limited as long as it dissolves an amino compound. For example, alcohols such as water, methanol, ethanol, propanol and butanol, ketones such as acetone, dimethyl ketone and methyl ethyl ketone, ethers such as tetrahydrofuran, tertiary amines such as N-methylpyrrolidone, dimethylacetamide and dimethylformamide, Or dimethyl sulfoxide etc. are mentioned, These 1 type (s) or 2 or more types can be used together and used.
アミノ化合物を含む極性溶媒の溶液の濃度は、アミノ化合物の濃度として、0.0001〜1M(0.0001〜1モル/L)、好ましくは0.0001〜0.1Mの濃度の溶液を使用することが適当である。 The concentration of the polar solvent solution containing the amino compound is 0.0001 to 1M (0.0001 to 1 mol / L), preferably 0.0001 to 0.1M as the concentration of the amino compound. Is appropriate.
塗布方法は、プラズマ処理層面にアミノ化合物を含む極性溶媒の溶液が接触することができる方法であれば、特に限定されず、公知の方法を利用することができる。例えば、浸漬法、スプレー法、刷毛塗りあるいは印刷法等を用いることができる。温度は0〜100℃、好ましくは10〜40℃付近の常温でよい。また、浸漬法を適用する場合、含浸時間は30秒〜5時間、好ましくは1分〜3時間とすることが有効である。 The coating method is not particularly limited as long as it can be brought into contact with a solution of a polar solvent containing an amino compound on the surface of the plasma treatment layer, and a known method can be used. For example, a dipping method, a spray method, a brush coating method or a printing method can be used. The temperature may be 0 to 100 ° C., preferably 10 to 40 ° C. When applying the dipping method, it is effective that the impregnation time is 30 seconds to 5 hours, preferably 1 minute to 3 hours.
塗布後、乾燥及び熱処理する。乾燥は極性溶媒を除去するために行う。熱処理はアミノ化合物の少なくとも一部が、プラズマ処理されてポリイミド樹脂のイミド結合の一部が分解して生じるカルボキシ基と反応して、アミド結合又はイミド結合でポリイミド樹脂と結合させるために行う。 After application, it is dried and heat-treated. Drying is performed to remove the polar solvent. The heat treatment is performed in order that at least a part of the amino compound reacts with a carboxy group generated by the plasma treatment and a part of the imide bond of the polyimide resin is decomposed to bond with the polyimide resin through an amide bond or an imide bond.
乾燥方法は、特に限定されず、自然乾燥、エアガンによる吹きつけ乾燥、あるいはオーブンによる乾燥等を用いることができる。乾燥条件は、極性溶媒の種類にもよるが、10〜150℃で5秒〜60分間、好ましくは25〜150℃で10秒〜30分間、更に好ましくは30〜120℃で、1分〜10分間である。 The drying method is not particularly limited, and natural drying, spray drying with an air gun, oven drying, or the like can be used. The drying conditions depend on the type of polar solvent, but are 10 to 150 ° C. for 5 seconds to 60 minutes, preferably 25 to 150 ° C. for 10 seconds to 30 minutes, and more preferably 30 to 120 ° C. for 1 minute to 10 minutes. For minutes.
乾燥後又は乾燥中に、所定の温度まで上昇させて熱処理を行うことによってコート層を形成する。この熱処理は、ポリイミド樹脂のイミド環の開裂によって生成した末端カルボキシル基と、アミノ化合物のアミノ基とのアミド化反応又はイミド化反応を行うために必要と考えられる。なお、反応はアミド化反応、イミド化反応の順に生じるものと考えられる。そして、アミノ化合物の少なくとも一部はイミド化反応まで進行することがよい。この熱処理は、前記の乾燥方法の条件でイミド化反応を生じさせることができる場合には、乾燥と同時に行うことも可能である。乾燥後に、熱処理を行う場合、加熱温度は50〜400℃、好ましくは80〜400℃で処理することがよく、熱処理が不十分である場合には、触媒による化学的処理を併用してもよい。 After drying or during drying, the coating layer is formed by raising the temperature to a predetermined temperature and performing heat treatment. This heat treatment is considered necessary for the amidation reaction or imidation reaction between the terminal carboxyl group generated by cleavage of the imide ring of the polyimide resin and the amino group of the amino compound. The reaction is considered to occur in the order of an amidation reaction and an imidation reaction. And at least one part of an amino compound should advance to imidation reaction. This heat treatment can be performed simultaneously with the drying when the imidization reaction can be caused under the conditions of the drying method. When heat treatment is performed after drying, the heating temperature is preferably 50 to 400 ° C., preferably 80 to 400 ° C. If the heat treatment is insufficient, chemical treatment with a catalyst may be used in combination. .
熱処理して改質層(アミノ化合物のコート層)を形成した後、樹脂層表面に余分に付着したアミノ化合物を除去する工程を備えることが好ましい。このような工程は、上記の熱処理工程で行うことも可能であり、熱処理を行う際に適用する加熱温度以下の沸点を有するアミノ化合物に適用が可能であり、改質層形成に関与しない余分なアミノ化合物を揮発除去することができる。有利には、樹脂層表面に余分に付着したアミノ化合物を有機溶剤で溶解除去する洗浄工程を備えることである。 After the heat treatment is performed to form the modified layer (amino compound coat layer), it is preferable to include a step of removing the amino compound adhering to the surface of the resin layer. Such a step can also be performed in the above heat treatment step, and can be applied to an amino compound having a boiling point equal to or lower than the heating temperature applied when the heat treatment is performed. Amino compounds can be volatilized off. It is advantageous to provide a cleaning step of dissolving and removing an amino compound that has excessively adhered to the resin layer surface with an organic solvent.
この洗浄工程で使用する有機溶剤には、アミノ化合物を溶解することができる溶剤を使用することができる。アミノ化合物を溶解する溶剤としては、炭素数1〜8の炭化水素系アルコール類、例えば、メタノール、エタノール、プロパノール、イソプロパノール、ブタノール、tert-ブタノール、ペンタノール、ヘキサノール、ヘプタノール、オクタノール等、炭素数3〜6の炭化水素系ケトン類、例えば、アセトン、プロパノン、メチルエチルケトン、ペンタノン、ヘキサノン、メチルイソブチルケトン、シクロヘキサノン等、炭素数4〜12の炭化水素系エーテル類、例えば、ジエチルエーテル、エチレングリコールジメチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、テトラヒドロフラン等、炭素数3〜7の炭化水素系エステル類、例えば、酢酸メチル、酢酸エチル、酢酸プロピル、酢酸ブチル、γ−ブチロラクトン、マロン酸ジエチル等、炭素数3〜6のアミド類、例えば、ジメチルホルムアミド、ジメチルアセトアミド、テトラメチル尿素、ヘキサメチルリン酸トリアミド、炭素数2のスルホキシド化合物、例えば、ジメチルスルホキシド等、炭素数1〜6の含ハロゲン化合物、例えば、クロロメタン、ブロモメタン、ジクロロメタン、クロロホルム、四塩化炭素、ジクロロエタン、1、2−ジクロロエタン、1、4−ジクロロブタン、トリクロルエタン、クロルベンゼン、o−ジクロルベンゼン等、炭素数4〜8の炭化水素化合物、例えば、ブタン、ヘキサン、ヘプタン、オクタン、ベンゼン、トルエン、キシレン等を用いることができる。経済的な観点からは、安価なメタノールが好適に用いられる。 As the organic solvent used in this washing step, a solvent capable of dissolving an amino compound can be used. Solvents for dissolving amino compounds include hydrocarbon alcohols having 1 to 8 carbon atoms such as methanol, ethanol, propanol, isopropanol, butanol, tert-butanol, pentanol, hexanol, heptanol, octanol, etc. -6 hydrocarbon ketones such as acetone, propanone, methyl ethyl ketone, pentanone, hexanone, methyl isobutyl ketone, cyclohexanone, etc., hydrocarbon ethers having 4 to 12 carbon atoms such as diethyl ether, ethylene glycol dimethyl ether, diethylene glycol C3-C7 hydrocarbon esters such as dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, tetrahydrofuran, etc., for example, methyl acetate Ethyl acetate, propyl acetate, butyl acetate, γ-butyrolactone, diethyl malonate and the like amides having 3 to 6 carbon atoms such as dimethylformamide, dimethylacetamide, tetramethylurea, hexamethylphosphoric triamide, sulfoxide having 2 carbon atoms Compounds such as dimethyl sulfoxide and other halogen-containing compounds having 1 to 6 carbon atoms such as chloromethane, bromomethane, dichloromethane, chloroform, carbon tetrachloride, dichloroethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane C 4-8 hydrocarbon compounds such as chlorobenzene, o-dichlorobenzene, for example, butane, hexane, heptane, octane, benzene, toluene, xylene and the like can be used. From an economical viewpoint, inexpensive methanol is preferably used.
上記洗浄工程で樹脂層表面を有機溶剤で洗浄する方法は限定されない。溶剤に浸漬してもよく、また、スプレー等で吹き付けて洗い流しても、適当な基材にしみ込ませてふき取ってもよい。この洗浄では、表面に余分に付着したアミノ化合物を溶解除去するが、アミノ化合物の膜がポリイミド樹脂層の表面に単分子膜程度の厚みとなるようにアミノ化合物を残してもよい。この際の洗浄工程における溶剤の温度は、好ましくは0〜100℃、より好ましくは5〜50℃の範囲である。また、洗浄時間は、好ましくは1〜1000秒間、より好ましくは3〜600秒間の範囲である。溶剤の使用量は、好ましくはポリイミド樹脂層1m2あたり1〜500L、より好ましくは3〜50Lの範囲である。洗浄後、乾燥して改質層を表面に有するポリイミド樹脂層を得る。The method for washing the resin layer surface with an organic solvent in the washing step is not limited. It may be immersed in a solvent, or may be sprayed off with a spray or the like, or may be wiped off by being soaked in a suitable base material. In this cleaning, the amino compound excessively attached to the surface is dissolved and removed, but the amino compound may be left on the surface of the polyimide resin layer so that the amino compound film has a thickness of about a monomolecular film. The temperature of the solvent in the washing step at this time is preferably in the range of 0 to 100 ° C, more preferably 5 to 50 ° C. The cleaning time is preferably in the range of 1 to 1000 seconds, more preferably 3 to 600 seconds. The amount of the solvent used is preferably in the range of 1 to 500 L, more preferably 3 to 50 L per 1 m 2 of the polyimide resin layer. After washing, drying is performed to obtain a polyimide resin layer having a modified layer on the surface.
最終的に得られる改質層は、ポリイミド樹脂のカルボキシル基と反応したアミノ化合物を含み、一部未反応のアミノ化合物が表面に付着し又は内部に含浸したポリイミド樹脂層からなると考えられる。本発明の方法で得られる改質層を表面に有するポリイミド樹脂層は、改質層の厚みがプラズマ処理層の厚みとほぼ同じであることが好ましい。より好ましくは、ポリイミド樹脂層厚みの1/1000000〜1/10程度であり、より好ましくは1/600000〜1/100程度である。また、この厚みはプラズマ処理時間やアミノ化合物の種類や溶液濃度を選択することによって調整できる。0.0005〜0.3μmの厚み、より好ましくは0.0006〜0.1μm の厚みとすることが有利である。 The modified layer finally obtained is considered to be composed of a polyimide resin layer containing an amino compound reacted with a carboxyl group of the polyimide resin, and a partially unreacted amino compound adhered to the surface or impregnated inside. In the polyimide resin layer having the modified layer obtained by the method of the present invention on the surface, the thickness of the modified layer is preferably substantially the same as the thickness of the plasma treatment layer. More preferably, it is about 1/1000000 to 1/10 of the thickness of the polyimide resin layer, more preferably about 1/600000 to 1/100. The thickness can be adjusted by selecting the plasma treatment time, the type of amino compound, and the solution concentration. It is advantageous to have a thickness of 0.0005 to 0.3 μm, more preferably 0.0006 to 0.1 μm.
次に、本発明の金属張積層板の製造方法について詳細を説明する。金属張積層板の製造方法は、ポリイミド樹脂層の表面に改質層を形成する工程Iと、工程Iで形成された改質層に金属層を設ける工程IIを備える。 Next, the details of the method for producing the metal-clad laminate of the present invention will be described. The method for producing a metal-clad laminate includes a step I of forming a modified layer on the surface of a polyimide resin layer and a step II of providing a metal layer on the modified layer formed in step I.
ポリイミド樹脂層の表面に改質層を形成する工程Iは、上記工程aと工程bを備える。工程Iにおける工程a及び工程bは、上記ポリイミド樹脂層の表面に改質層を形成する方法と同様に行うことができる。この方法で得られた表面処理ポリイミド樹脂層を工程IIに付す。工程Iで得られる改質層を表面に有するポリイミド樹脂層は、表面が改質されて接着性が優れるため、金属層との接着力を高める。 The step I of forming the modified layer on the surface of the polyimide resin layer includes the step a and the step b. Step a and step b in step I can be performed in the same manner as the method for forming the modified layer on the surface of the polyimide resin layer. The surface-treated polyimide resin layer obtained by this method is subjected to Step II. Since the polyimide resin layer having the modified layer obtained in the step I on the surface is modified in surface and has excellent adhesiveness, it increases the adhesive force with the metal layer.
工程IIは、工程Iで形成された改質層に金属層を設ける工程である。金属層を設ける方法としては、改質層の表面に金属箔を重ね合わせ、熱圧着する方法(工程d)、又は蒸着により金属薄膜層を形成する方法(工程e)がある。 Step II is a step of providing a metal layer on the modified layer formed in Step I. As a method of providing the metal layer, there are a method of superimposing a metal foil on the surface of the modified layer and thermocompression bonding (step d), or a method of forming a metal thin film layer by vapor deposition (step e).
金属層を構成する金属としては、鉄、ニッケル、ベリリウム、アルミニウム、亜鉛、インジウム、銀、金、スズ、ジルコニウム、ステンレス、タンタル、チタン、銅、鉛、マグネシウム、マンガン及びこれらの合金箔が挙げられる。この中でも、銅、銅合金又はステンレスが適する。金属層の厚みは0.001〜50μm、好ましくは0.1〜30μmの範囲がよい。 Examples of the metal constituting the metal layer include iron, nickel, beryllium, aluminum, zinc, indium, silver, gold, tin, zirconium, stainless steel, tantalum, titanium, copper, lead, magnesium, manganese, and alloy foils thereof. . Among these, copper, copper alloy, or stainless steel is suitable. The thickness of the metal layer is 0.001 to 50 μm, preferably 0.1 to 30 μm.
工程dにおいて、熱圧着する方法は特に制限されず、適宜公知の方法を採用することができる。金属箔を張り合わせる方法としては、通常のハイドロプレス、真空タイプのハイドロプレス、オートクレーブ加圧式真空プレス、連続式熱ラミネータ等を挙げることができる。金属箔を張り合わせる方法の中でも、十分なプレス圧力が得られ、残存揮発分の除去も容易に行え、更に金属箔の酸化を防止することができるという観点から真空ハイドロプレス、連続式熱ラミネータを用いることが好ましい。 In step d, the method for thermocompression bonding is not particularly limited, and a known method can be appropriately employed. Examples of the method of laminating the metal foil include a normal hydro press, a vacuum type hydro press, an autoclave pressurizing vacuum press, and a continuous thermal laminator. Among the methods of laminating metal foils, a vacuum hydropress and a continuous thermal laminator are used from the viewpoint that sufficient pressing pressure is obtained, residual volatiles can be easily removed, and oxidation of the metal foil can be prevented. It is preferable to use it.
また、熱圧着は、150〜450℃の範囲内に加熱しながら金属箔をプレスすることが好ましい。より好ましくは150〜400℃の範囲内である。更に、好ましくは150〜380℃の範囲内である。別の観点からはポリイミド樹脂層又は改質イミド化層のガラス転移温度以上の温度であることがよい。また、プレス圧力については、使用するプレス機器の種類にもよるが、通常、1〜50MPa程度が適当である。 In thermocompression bonding, it is preferable to press the metal foil while heating in the range of 150 to 450 ° C. More preferably, it exists in the range of 150-400 degreeC. Furthermore, it is preferably in the range of 150 to 380 ° C. From another point of view, the temperature is preferably equal to or higher than the glass transition temperature of the polyimide resin layer or the modified imidized layer. The press pressure is usually about 1 to 50 MPa, although it depends on the type of press equipment used.
金属箔としては、鉄箔、ニッケル箔、ベリリウム箔、アルミニウム箔、亜鉛箔、インジウム箔、銀箔、金箔、スズ箔、ジルコニウム箔、ステンレス箔、タンタル箔、チタン箔、銅箔、鉛箔、マグネシウム箔、マンガン箔及びこれらの合金箔が挙げられる。この中でも、銅箔又はステンレス箔が適する。ここでいう銅箔とは、銅又は銅を主成分とする銅合金の箔を言う。好ましくは銅含有率が90質量%以上、特に好ましくは95質量%以上の銅箔である。銅箔が含有している金属としては、クロム、ジルコニウム、ニッケル、シリコン、亜鉛、ベリリウム等を挙げることができる。また、これらの金属が2種類以上含有される合金箔であっても良い。また、ステンレス箔は、材質に制限はないが、例えばSUS304のようなステンレス箔が好ましい。 As metal foil, iron foil, nickel foil, beryllium foil, aluminum foil, zinc foil, indium foil, silver foil, gold foil, tin foil, zirconium foil, stainless steel foil, tantalum foil, titanium foil, copper foil, lead foil, magnesium foil , Manganese foils and alloy foils thereof. Among these, copper foil or stainless steel foil is suitable. The copper foil here means copper or a copper alloy foil containing copper as a main component. Preferably, the copper foil has a copper content of 90% by mass or more, particularly preferably 95% by mass or more. Examples of the metal contained in the copper foil include chromium, zirconium, nickel, silicon, zinc, and beryllium. An alloy foil containing two or more of these metals may also be used. The stainless steel foil is not limited in material, but for example, a stainless steel foil such as SUS304 is preferable.
金属箔は、ポリイミド樹脂層が積層する面にシランカップリング剤処理が施されていてもよい。シランカップリング剤は、アミノ基又はメルカプト基等の官能基を有するシランカップリング剤が好ましく、より好ましくはアミノ基を有するシランカップリング剤がよい。具体例としては、3-アミノプロピルトリメトキシシラン、3-アミノプロピルトリエトキシシラン、2-アミノプロピルトリメトキシシラン、2-アミノプロピルトリエトキシシラン、N-(2-アミノエチル)-3-アミノプロピルトリメトキシシラン、N-(2-アミノエチル)-3-アミノプロピルトリエトキシシラン、N-(2-アミノエチル)-3-アミノプロピルメチルジメトキシシラン等が挙げられる。この中でも、3-アミノプロピルトリエトキシシラン、3-アミノプロピルトリメトキシシラン、N-(2-アミノエチル)-3-アミノプロピルトリメトキシシラン、N-(2-アミノエチル)-3-アミノプロピルメチルジメトキシシラン、3-トリエトキシシリル-N-(1,3-ジメチルブチリデン)プロピルアミン及びN-フェニル-3-アミノプロピルトリメトキシシランから選択される少なくとも1種であることがよい。特に、3-アミノプロピルトリエトキシシラン、3-アミノプロピルトリメトキシシランが好ましい。 The metal foil may be treated with a silane coupling agent on the surface on which the polyimide resin layer is laminated. The silane coupling agent is preferably a silane coupling agent having a functional group such as an amino group or a mercapto group, more preferably a silane coupling agent having an amino group. Specific examples include 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminopropyltrimethoxysilane, 2-aminopropyltriethoxysilane, N- (2-aminoethyl) -3-aminopropyl. Examples include trimethoxysilane, N- (2-aminoethyl) -3-aminopropyltriethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, and the like. Among these, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropylmethyl It may be at least one selected from dimethoxysilane, 3-triethoxysilyl-N- (1,3-dimethylbutylidene) propylamine and N-phenyl-3-aminopropyltrimethoxysilane. In particular, 3-aminopropyltriethoxysilane and 3-aminopropyltrimethoxysilane are preferable.
シランカップリング剤は極性溶媒の溶液として使用する。極性溶媒としては、水又は水を含有する極性有機溶媒が適する。極性有機溶媒としては、水との親和性を有する極性の液体であれば、特に限定されない。このような極性有機溶媒として、例えば、メタノール、エタノール、プロパノール、イソプロパノール、アセトン、テトラヒドロフラン、ジメチルホルムアミド、ジメチルアセトアミド等が挙げられる。シランカップリング剤溶液は、0.01〜5重量%、好ましくは0.1〜2.0重量%、より好ましくは0.5〜1.0重量%濃度の溶液がよい。 The silane coupling agent is used as a polar solvent solution. As the polar solvent, water or a polar organic solvent containing water is suitable. The polar organic solvent is not particularly limited as long as it is a polar liquid having an affinity for water. Examples of such a polar organic solvent include methanol, ethanol, propanol, isopropanol, acetone, tetrahydrofuran, dimethylformamide, dimethylacetamide and the like. The silane coupling agent solution has a concentration of 0.01 to 5% by weight, preferably 0.1 to 2.0% by weight, more preferably 0.5 to 1.0% by weight.
シランカップリング剤処理は、シランカップリング剤を含む極性溶媒の溶液が接触する方法であれば、特に限定されず、公知の方法を利用することができる。例えば、浸漬法、スプレー法、刷毛塗りあるいは印刷法等を用いることができる。温度は0〜100℃、好ましくは10〜40℃付近の常温でよい。また、浸漬時間は、浸漬法を適用する場合、10秒〜1時間、好ましくは30秒〜15分間処理することが有効である。処理後、乾燥する。乾燥方法は、特に限定されず、自然乾燥、エアガンによる吹きつけ乾燥、あるいはオーブンによる乾燥等を用いることができる。乾燥条件は、極性溶媒の種類にもよるが、10〜150℃で5秒〜60分間、好ましくは25〜150℃で10秒〜30分間、更に好ましくは30〜120℃で1分〜10分間である。 The silane coupling agent treatment is not particularly limited as long as it is a method in which a solution of a polar solvent containing a silane coupling agent contacts, and a known method can be used. For example, a dipping method, a spray method, a brush coating method or a printing method can be used. The temperature may be 0 to 100 ° C., preferably 10 to 40 ° C. Moreover, as for immersion time, when applying the immersion method, it is effective to process for 10 second-1 hour, Preferably it is 30 second-15 minutes. Dry after treatment. The drying method is not particularly limited, and natural drying, spray drying with an air gun, oven drying, or the like can be used. The drying conditions depend on the type of polar solvent, but are 10 to 150 ° C. for 5 seconds to 60 minutes, preferably 25 to 150 ° C. for 10 seconds to 30 minutes, more preferably 30 to 120 ° C. for 1 minute to 10 minutes. It is.
金属箔が銅箔である例としては、フレキシブル基板用途に用いる場合が挙げられる。この用途に用いられる場合の銅箔の好ましい厚みは3〜50μmの範囲であり、より好ましくは5〜30μmの範囲であるが、ファインピッチの要求される用途で用いられる銅張積層板には、薄い銅箔が好適に用いられ、この場合、5〜20μmの範囲が適している。また、本発明は表面粗度が小さい銅箔を用いても樹脂層に対する優れた接着性が得られることから、特に、表面粗度が小さい銅箔を用いる場合に適している。好ましい銅箔の表面粗度は、十点平均粗さで0.1〜3μmの範囲が適している。特に、ファインピッチの要求される用途で用いられる銅箔については、表面粗度は十点平均粗さで0.1〜1.0μmが適している。 An example in which the metal foil is a copper foil includes a case where the metal foil is used for a flexible substrate. The preferred thickness of the copper foil when used in this application is in the range of 3 to 50 μm, more preferably in the range of 5 to 30 μm, but the copper-clad laminate used in applications where fine pitch is required, A thin copper foil is preferably used, and in this case, a range of 5 to 20 μm is suitable. Moreover, since the adhesiveness with respect to a resin layer is acquired even if it uses copper foil with small surface roughness, this invention is suitable especially when using copper foil with small surface roughness. The preferred surface roughness of the copper foil is 10-point average roughness in the range of 0.1 to 3 μm. In particular, for copper foils used in applications where fine pitch is required, the surface roughness is suitably 10-point average roughness of 0.1 to 1.0 μm.
金属箔がステンレス箔である例としては、ハードディスクドライブに搭載されているサスペンション(以下、HDDサスペンション)用途に用いる場合が挙げられる。この用途として用いられる場合のステンレス箔の好ましい厚みは10〜100μmの範囲がよく、より好ましくは15〜70μmの範囲がよく、更に好ましくは15〜50μmの範囲がよい。 As an example in which the metal foil is a stainless steel foil, there is a case where the metal foil is used for a suspension (hereinafter referred to as HDD suspension) mounted on a hard disk drive. The preferred thickness of the stainless steel foil when used for this purpose is in the range of 10 to 100 μm, more preferably in the range of 15 to 70 μm, and still more preferably in the range of 15 to 50 μm.
次に、工程IIにおいて、工程eを備える金属張積層板の製造方法について説明する。工程a及び工程bは上記のようにして行ったのち、工程eに付す。 Next, in step II, a method for producing a metal-clad laminate including step e will be described. Steps a and b are carried out as described above, and then subjected to step e.
工程eにおいて、蒸着により金属薄膜層を形成する方法は、特に限定されないが、例えば、真空蒸着法、スパッタリング法、電子ビーム蒸着法、イオンプレーティング法等を使用でき、特に、スパッタリング法が好ましい。このスパッタリング法はDCスパッタ、RFスパッタ、DCマグネトロンスパッタ、RFマグネトロンスパッタ、ECスパッタ、レーザービームスパッタ等各種手法があるが、特に制限されず、適宜採用することができる。スパッタリング法による金属薄膜層の形成条件については、例えば、アルゴンガスをスパッタガスとして使用し、圧力は好ましくは1×10−2〜1Pa、より好ましくは5×10−2〜5×10−1Paであり、スパッタ電力密度は、好ましくは1〜100Wcm−2、より好ましくは1〜50Wcm−2の条件で行う方法がよい。In the step e, the method for forming the metal thin film layer by vapor deposition is not particularly limited. For example, a vacuum vapor deposition method, a sputtering method, an electron beam vapor deposition method, an ion plating method and the like can be used, and the sputtering method is particularly preferable. This sputtering method includes various methods such as DC sputtering, RF sputtering, DC magnetron sputtering, RF magnetron sputtering, EC sputtering, and laser beam sputtering, but is not particularly limited and can be appropriately employed. Regarding the formation conditions of the metal thin film layer by the sputtering method, for example, argon gas is used as a sputtering gas, and the pressure is preferably 1 × 10 −2 to 1 Pa, more preferably 5 × 10 −2 to 5 × 10 −1 Pa. The sputtering power density is preferably 1 to 100 Wcm −2 , more preferably 1 to 50 Wcm −2 .
金属薄膜の形成は、銅を薄膜層として用いることが好ましい。この際、接着性をより向上させる下地金属薄膜層を表面処理ポリイミド樹脂層に設け、その上に銅薄膜層を設けてもよい。下地金属薄膜層としては、ニッケル、クロムやこれらの合金層がある。下地金属薄膜層を設ける場合、その厚みは銅薄膜層厚みの1/2以下、好ましくは1/5以下で、1〜50nm程度の厚みとすることがよい。この下地金属薄膜層もスパッタリング法により形成することが好ましい。 For the formation of the metal thin film, copper is preferably used as the thin film layer. Under the present circumstances, the base metal thin film layer which improves adhesiveness more may be provided in a surface treatment polyimide resin layer, and a copper thin film layer may be provided on it. Examples of the base metal thin film layer include nickel, chromium, and an alloy layer thereof. When the base metal thin film layer is provided, the thickness is 1/2 or less, preferably 1/5 or less of the thickness of the copper thin film layer, and is preferably about 1 to 50 nm. This underlying metal thin film layer is also preferably formed by sputtering.
用いられる銅は一部に他の金属を含有する合金銅でも良い。スパッタリング法により形成させる銅又は銅合金は好ましくは銅含有率が90質量%以上、特に好ましくは95質量%以上のものである。銅が含有し得る金属としては、クロム、ジルコニウム、ニッケル、シリコン、亜鉛、ベリリウム等を挙げることができる。また、これらの金属が2種類以上含有される銅合金薄膜であってもよい。 Copper to be used may be alloy copper partially containing other metals. The copper or copper alloy formed by the sputtering method preferably has a copper content of 90% by mass or more, particularly preferably 95% by mass or more. Examples of the metal that copper can contain include chromium, zirconium, nickel, silicon, zinc, and beryllium. Moreover, the copper alloy thin film in which these metals contain 2 or more types may be sufficient.
工程eにおいて形成される銅薄膜層の厚みは、0.001〜1.0μmの範囲であることがよく、好ましくは0.01〜0.5μm、より好ましくは0.05〜0.5μm、更に好ましくは0.1〜0.5μmである。銅薄膜層を更に厚くする場合には、無電解めっき又は電解めっきによって、厚膜にしてもよい。 The thickness of the copper thin film layer formed in step e is preferably in the range of 0.001 to 1.0 μm, preferably 0.01 to 0.5 μm, more preferably 0.05 to 0.5 μm, and further Preferably it is 0.1-0.5 micrometer. When the copper thin film layer is further thickened, it may be thickened by electroless plating or electrolytic plating.
本発明の金属張積層板の製造方法によって得られる積層板は、ポリイミド樹脂層の片面又は両面に銅箔等の金属層を有する積層板である。片面に金属層を有する積層板は、ポリイミド樹脂層の改質層に金属層を形成することにより得られる。ポリイミド樹脂層がガラス、樹脂フィルム等の基材に積層されている場合は、このポリイミド樹脂層側に改質層を形成し、該層に金属薄膜層を形成させることにより金属張積層板としたのち、これを必要により剥離する。ポリイミド樹脂層が銅箔等の金属箔に積層されている場合は、このポリイミド樹脂層側に改質層を形成し、この上に金属層を形成することにより両面金属張積層板とすることができる。また、両面に金属層を有する積層板は、上記の方法の他、ポリイミド樹脂層の両面に改質層が形成されている場合は、この両面に、熱圧着又は蒸着により金属層を形成することにより得られる。更に、片面に金属箔を有する片面金属張積層板を製造したのち、少なくとも1枚の片面金属張積層板について上記のポリイミド樹脂層の表面処理を行ったのち、2枚の片面金属張積層板のポリイミド層を重ね合わせて熱圧着する方法によっても製造できる。 The laminate obtained by the method for producing a metal-clad laminate of the present invention is a laminate having a metal layer such as a copper foil on one side or both sides of a polyimide resin layer. A laminate having a metal layer on one side can be obtained by forming a metal layer on the modified layer of the polyimide resin layer. When the polyimide resin layer is laminated on a substrate such as glass or resin film, a modified layer is formed on the polyimide resin layer side, and a metal thin film layer is formed on the layer to form a metal-clad laminate. After that, it is peeled off if necessary. When a polyimide resin layer is laminated on a metal foil such as a copper foil, a modified layer is formed on the polyimide resin layer side, and a metal layer is formed thereon to form a double-sided metal-clad laminate. it can. In addition to the above method, in the case of a laminate having a metal layer on both sides, when a modified layer is formed on both sides of the polyimide resin layer, the metal layer is formed on both sides by thermocompression bonding or vapor deposition. Is obtained. Further, after manufacturing a single-sided metal-clad laminate having a metal foil on one side, surface treatment of the polyimide resin layer is performed on at least one single-sided metal-clad laminate, It can also be manufactured by a method in which polyimide layers are superposed and thermocompression bonded.
以下、本発明の実施例により具体的に説明するが、本発明はこれらの実施例によって何ら限定されるものではない。なお、以下の実施例において特にことわりのない限り各種測定、評価は下記による。 EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited to these examples. In the following examples, various measurements and evaluations are as follows unless otherwise specified.
接着強度
接着強度の測定は、テンシロンテスター(東洋精機製作所社製)を用いて、幅10mmの短冊状に切断したサンプルについて、室温で180°、10mmピール強度を測定することにより評価した。接着強度の判定基準として、接着強度が0.4kN/m以上である場合を合格とし、0.4kN/m未満である場合を不合格とした。また、接着強度が0.4kN/m以上0.5kN/m未満である場合を適とし、0.5kN/m以上である場合を良とする。Adhesive strength The adhesive strength was measured by measuring 180 °, 10 mm peel strength at room temperature for a sample cut into a 10 mm width strip using a Tensilon tester (manufactured by Toyo Seiki Seisakusho). As a criterion for determining the adhesive strength, a case where the adhesive strength was 0.4 kN / m or more was accepted, and a case where it was less than 0.4 kN / m was rejected. Further, a case where the adhesive strength is 0.4 kN / m or more and less than 0.5 kN / m is suitable, and a case where the adhesive strength is 0.5 kN / m or more is good.
線熱膨張係数
線熱膨張係数の測定は、サーモメカニカルアナライザー(セイコーインスツルメンツ社製)を用い、250℃まで昇温し、更にその温度で10分保持した後、5℃/分の速度で冷却し、240℃から100℃までの平均線熱膨張係数(CTE)を求めた。Linear thermal expansion coefficient The linear thermal expansion coefficient was measured using a thermomechanical analyzer (manufactured by Seiko Instruments Inc.), heated to 250 ° C, held at that temperature for 10 minutes, and then cooled at a rate of 5 ° C / minute. The average coefficient of linear thermal expansion (CTE) from 240 ° C. to 100 ° C. was determined.
以下、実施例に基づいて、本発明を具体的に説明するが、本発明はこれに限定されない。 EXAMPLES Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited to this.
製造例1
425gのN,N−ジメチルアセトアミドに、31.8gの2,2'−ジメチル−4,4'−ジアミノビフェニル及び4.9gの1,3−ビス(4−アミノフェノキシ)ベンゼンを室温で30分撹拌した。その後、28.6gのピロメリット酸二無水物及び9.6gのビフェニル−3,4,3',4'−テトラカルボン酸二無水物を加え、窒素雰囲気下、室温で3時間撹拌し、溶液粘度が28,000ポイズのポリアミド酸樹脂溶液を得た。このポリアミド酸樹脂溶液を、ステンレス基材へ塗布し、130℃で5分間乾燥し、15分かけて360℃まで昇温させてイミド化を完了させてステンレス基材に積層されたポリイミドフィルム得た。このポリイミドフィルムをステンレス基材から剥離して、ポリイミドフィルムF-1を得た。このフィルムF-1の熱線膨張係数は、21×10-6/Kであり、ポリイミド層の厚みは25μmであった。Production Example 1
To 425 g of N, N-dimethylacetamide, 31.8 g of 2,2′-dimethyl-4,4′-diaminobiphenyl and 4.9 g of 1,3-bis (4-aminophenoxy) benzene at room temperature for 30 minutes Stir. Thereafter, 28.6 g of pyromellitic dianhydride and 9.6 g of biphenyl-3,4,3 ′, 4′-tetracarboxylic dianhydride were added, and the solution was stirred at room temperature for 3 hours under a nitrogen atmosphere. A polyamic acid resin solution having a viscosity of 28,000 poise was obtained. This polyamic acid resin solution was applied to a stainless steel substrate, dried at 130 ° C. for 5 minutes, heated to 360 ° C. over 15 minutes to complete imidization, and a polyimide film laminated on the stainless steel substrate was obtained. . This polyimide film was peeled from the stainless steel substrate to obtain polyimide film F-1. The thermal expansion coefficient of this film F-1 was 21 × 10 −6 / K, and the thickness of the polyimide layer was 25 μm.
製造例2
5gの3-アミノプロピルトリメトキシシラン、500gのメタノール及び2.5gの水を混合し、2時間撹拌することで、シランカップリング剤溶液を調整した。予め水洗したステンレス箔1(新日本製鐵株式会社製 SUS304 H-TA、厚み20μm、樹脂層側の表面粗度:十点平均粗さRz0.8μm)をシランカップリング剤溶液(液温約20℃)へ30秒間浸漬した後、一旦大気中に引き上げ、余分な液を落とした。次いで圧縮空気を約15秒間吹き付けて乾燥した。その後、110℃で30分間加熱処理を行い、シランカップリング剤処理のステンレス箔2を得た。Production Example 2
A silane coupling agent solution was prepared by mixing 5 g of 3-aminopropyltrimethoxysilane, 500 g of methanol and 2.5 g of water and stirring for 2 hours. Stainless steel foil 1 (Shin Nippon Steel Co., Ltd. SUS304 H-TA, thickness 20 μm, surface roughness on the resin layer side: 10-point average roughness Rz 0.8 μm) washed in advance with a silane coupling agent solution (liquid temperature about 20) C.) for 30 seconds and then pulled up into the atmosphere to remove excess liquid. Then, it was dried by blowing compressed air for about 15 seconds. Then, heat processing were performed for 30 minutes at 110 degreeC, and the stainless steel foil 2 of a silane coupling agent process was obtained.
実施例1
ポリイミドフィルムF-1を真空プラズマ処理装置(プラズマクリーナーVE−1500II、(株)モリエンジニアリング)へ入れ、酸素雰囲気下で、出力1000Wの電力を入力してプラズマ放電させ、30秒間プラズマ処理して、プラズマ処理層を有するポリイミドフィルムF-2を得た。このフィルムのプラズマ処理層面を、2−アミノ−1,3,5−トリアジン−4,6−ジチオール160mgをメタノール1Lに溶解したアミノ化合物溶液(浴温20℃)に160分間浸漬することで表面処理を行い、一旦空気中に引き上げ、余分な液を落とした。次いで、圧縮空気を約15秒吹き付けて乾燥した。その後、300℃で3分間加熱処理することで、改質層を形成した。更に、フィルム表面に付着した余分なアミノ化合物を洗浄するため、メタノール750mL(浴温約20℃)に60秒間浸漬して洗浄し、次いでイオン交換水750mL(浴温約20℃)に60秒間浸漬し、その後圧縮空気を約15秒吹き付けて乾燥して、改質層を有するポリイミドフィルムF-3を得た。Example 1
The polyimide film F-1 is put into a vacuum plasma processing apparatus (Plasma Cleaner VE-1500II, Mori Engineering Co., Ltd.), and in an oxygen atmosphere, power is output at 1000 W to perform plasma discharge, and plasma treatment is performed for 30 seconds. A polyimide film F-2 having a plasma treatment layer was obtained. The surface of the plasma treatment layer of this film was immersed in an amino compound solution (bath temperature 20 ° C.) in which 160 mg of 2-amino-1,3,5-triazine-4,6-dithiol was dissolved in 1 L of methanol for 160 minutes. And once pulled up into the air, the excess liquid was dropped. Then, it was dried by blowing compressed air for about 15 seconds. Then, the modified layer was formed by heat-processing at 300 degreeC for 3 minute (s). Furthermore, in order to wash away an excess amino compound adhering to the film surface, the film is washed by immersing in 750 mL of methanol (bath temperature about 20 ° C.) for 60 seconds, and then immersed in 750 mL of ion-exchanged water (bath temperature of about 20 ° C.) for 60 seconds. Then, compressed air was blown for about 15 seconds and dried to obtain a polyimide film F-3 having a modified layer.
得られたフィルムF-3の改質層面に銅が成膜されるように、RFマグネトロンスパッタリング装置にセットし、銅薄膜層を形成した。積層体をセットした槽内は3×10−4Paまで減圧した後、アルゴンガスを導入し真空度を2×10−1Paとし、RF電源にてプラズマを発生した。このプラズマにて銅(99.99wt%)を0.2μm成膜して第一スパッタリング層1aを得た。次いで、上記銅スパッタ膜(第一スパッタリング層1a)を電極として電解めっき浴にて8μm厚の銅めっき層(めっき層1b)を形成した。電解めっき浴としては、硫酸銅浴(硫酸銅100g/L、硫酸220g/L、塩素40mg/L、アノードは含りん銅)を使用し、電流密度2.0A/dm2にてめっき膜を形成した。めっき後には十分な蒸留水で洗浄し乾燥を行った。このようにして、ポリイミド樹脂層/銅スパッタ層1a/電解めっき銅層1bから構成される金属張積層板を得た。ポリイミド樹脂層と金属層との接着強度は、0.8kN/mであった。A copper thin film layer was formed by setting in an RF magnetron sputtering apparatus so that copper was formed on the modified layer surface of the obtained film F-3. The inside of the tank in which the laminate was set was depressurized to 3 × 10 −4 Pa, and then argon gas was introduced to make the degree of vacuum 2 × 10 −1 Pa, and plasma was generated by an RF power source. With this plasma, copper (99.99 wt%) was formed to a thickness of 0.2 μm to obtain a first sputtering layer 1a. Next, a copper plating layer (plating layer 1b) having a thickness of 8 μm was formed in an electrolytic plating bath using the copper sputtered film (first sputtering layer 1a) as an electrode. As an electrolytic plating bath, a copper sulfate bath (copper sulfate 100 g / L, sulfuric acid 220 g / L, chlorine 40 mg / L, and the anode is phosphorous copper) is used to form a plating film at a current density of 2.0 A / dm 2 . did. After plating, it was washed with sufficient distilled water and dried. In this way, a metal-clad laminate composed of polyimide resin layer / copper sputter layer 1a / electroplated copper layer 1b was obtained. The adhesive strength between the polyimide resin layer and the metal layer was 0.8 kN / m.
実施例2
アミノ化合物溶液において、2−アミノ−1,3,5−トリアジン−4,6−ジチオールの使用量を80mgとした以外は、実施例1と同様にして、改質層を有するポリイミドフィルムF-4を得た。このポリイミドフィルムF-4を使用して、実施例1と同様にして、ポリイミド樹脂層/銅スパッタ層/電解めっき銅層から構成される金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.8kN/mであった。Example 2
A polyimide film F-4 having a modified layer in the same manner as in Example 1 except that the amount of 2-amino-1,3,5-triazine-4,6-dithiol used in the amino compound solution was 80 mg. Got. Using this polyimide film F-4, a metal-clad laminate composed of a polyimide resin layer / copper sputter layer / electroplated copper layer was produced in the same manner as in Example 1. The adhesive strength between the polyimide resin layer and the metal layer was 0.8 kN / m.
実施例3
実施例1のプラズマ処理層を有するポリイミドフィルムF-2のプラズマ処理面を、2−アミノ−1,3,5−トリアジン−4,6−ジチオール160mgをメタノール1Lに溶解した溶液(浴温20℃)に30秒間浸漬することで表面処理を行い、一旦空気中に引き上げ、余分な液を落とした。次いで、圧縮空気を約15秒吹き付けて乾燥した。その後、130℃で10分間加熱処理することで、改質層を有するポリイミドフィルムF-5を得た。このポリイミドフィルムF-5を使用して、実施例1と同様にして、ポリイミド樹脂層/銅スパッタ層/電解めっき銅層から構成される金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.5kN/mであった。Example 3
A solution obtained by dissolving 160 mg of 2-amino-1,3,5-triazine-4,6-dithiol in 1 L of methanol (bath temperature 20 ° C.) was applied to the plasma-treated surface of the polyimide film F-2 having the plasma-treated layer of Example 1. ) For 30 seconds, surface treatment was carried out, and once it was pulled up in the air, the excess liquid was dropped. Then, it was dried by blowing compressed air for about 15 seconds. Then, the polyimide film F-5 which has a modified layer was obtained by heat-processing at 130 degreeC for 10 minute (s). Using this polyimide film F-5, a metal-clad laminate composed of polyimide resin layer / copper sputter layer / electrolytically plated copper layer was produced in the same manner as in Example 1. The adhesive strength between the polyimide resin layer and the metal layer was 0.5 kN / m.
実施例4
プラズマ処理層を有するポリイミドフィルムF-2のプラズマ処理層面を、2−アミノ−1,3,5−トリアジン−4,6−ジチオール160mgをメタノール1Lに溶解した溶液(浴温20℃)に30分間浸漬することで表面処理を行い、一旦空気中に引き上げ、余分な液を落とした。次いで、圧縮空気を約15秒吹き付けて乾燥した。その後、300℃で3分間加熱処理することで、改質層を有するポリイミドフィルムF-6を得た。この後、コート層表面に付着した余分なアミノ化合物を除去するための洗浄処理を行わなかった以外は、実施例1と同様にしてポリイミド樹脂層/銅スパッタ層/電解めっき銅層から構成される金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.5kN/mであった。Example 4
The surface of the polyimide film F-2 having a plasma processing layer was treated with a solution (bath temperature 20 ° C.) of 160 mg of 2-amino-1,3,5-triazine-4,6-dithiol dissolved in 1 L of methanol for 30 minutes. The surface treatment was performed by dipping, and it was once pulled up in the air, and excess liquid was dropped. Then, it was dried by blowing compressed air for about 15 seconds. Then, the polyimide film F-6 which has a modified layer was obtained by heat-processing at 300 degreeC for 3 minute (s). Thereafter, it is composed of a polyimide resin layer / a copper sputtered layer / an electroplated copper layer in the same manner as in Example 1 except that the cleaning process for removing excess amino compound adhering to the surface of the coat layer was not performed. A metal-clad laminate was produced. The adhesive strength between the polyimide resin layer and the metal layer was 0.5 kN / m.
実施例5
アミノ化合物溶液において、2−アミノ−1,3,5−トリアジン−4,6−ジチオールの代わりに4,5-ジアミノ-2,6-ジメルカプトピリミジン174mgを使用した以外は、実施例1と同様にして、改質層を有するポリイミドフィルムF-7を得た。このポリイミドフィルムF-7を使用して実施例1と同様にしてポリイミド樹脂層/銅スパッタ層/電解めっき銅層から構成される金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.6kN/mであった。Example 5
As in Example 1, except that 174 mg of 4,5-diamino-2,6-dimercaptopyrimidine was used in place of 2-amino-1,3,5-triazine-4,6-dithiol in the amino compound solution. Thus, a polyimide film F-7 having a modified layer was obtained. Using this polyimide film F-7, a metal-clad laminate composed of polyimide resin layer / copper sputter layer / electroplated copper layer was produced in the same manner as in Example 1. The adhesive strength between the polyimide resin layer and the metal layer was 0.6 kN / m.
実施例6
アミノ化合物溶液において、2−アミノ−1,3,5−トリアジン−4,6−ジチオールの代わりに5-アミノ-1,3,4-チアゾール-2-チオール150mgを使用した以外は、実施例1と同様にして、改質層を有するポリイミドフィルムF-8を得た。このポリイミドフィルムF-8を使用して実施例1と同様にしてポリイミド樹脂層/銅スパッタ層/電解めっき銅層から構成される金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.7kN/mであった。Example 6
Example 1 except that in the amino compound solution, 150 mg of 5-amino-1,3,4-thiazole-2-thiol was used instead of 2-amino-1,3,5-triazine-4,6-dithiol In the same manner as described above, a polyimide film F-8 having a modified layer was obtained. Using this polyimide film F-8, a metal-clad laminate composed of polyimide resin layer / copper sputter layer / electroplated copper layer was produced in the same manner as in Example 1. The adhesive strength between the polyimide resin layer and the metal layer was 0.7 kN / m.
比較例1
実施例1において、アミノ化合物溶液による処理を行わなかった以外は、実施例1と同様にして、金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.3kN/mであった。Comparative Example 1
A metal-clad laminate was produced in the same manner as in Example 1 except that the treatment with the amino compound solution was not performed in Example 1. The adhesive strength between the polyimide resin layer and the metal layer was 0.3 kN / m.
比較例2
実施例1におけるプラズマ処理とアミノ化合物の溶液による処理を行わなかった以外は、実施例1と同様にして、金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.3kN/mであった。Comparative Example 2
A metal-clad laminate was prepared in the same manner as in Example 1 except that the plasma treatment and the treatment with an amino compound solution in Example 1 were not performed. The adhesive strength between the polyimide resin layer and the metal layer was 0.3 kN / m.
実施例7
ポリイミドフィルムF-1をアルゴンガス7L/min、ヘリウムガス3L/min及び窒素ガス0.3L/minの混合気体が注入されている部屋に通し、常圧下で、印加圧力が3.2kV、出力200Wの電力を入力してプラズマ放電させ、5分間、フィルムの表面層(両面)をプラズマ処理して、プラズマ処理層を有するポリイミドフィルムF-9を得た。このフィルムのプラズマ処理面を、エチレンジアミン60mgをメタノール1Lに溶解した有機表面処理剤を溶解した溶液(浴温20℃)に5分間浸漬することで表面処理を行い、一旦空気中に引き上げ、余分な液を落とした。次いで、圧縮空気を約15秒吹き付けて乾燥した。その後、300℃で3分間加熱処理することで、改質層を形成した。更に、表面に付着した余分なエチレンジアミンを洗浄するため、メタノール750mL(浴温約20℃)にポリイミド樹脂層を60秒間浸漬して洗浄をし、次いでイオン交換水750mL(浴温約20℃)に60秒間浸漬し、その後圧縮空気を約15秒吹き付けて乾燥して、改質層を有するポリイミドフィルムF-10を得た。Example 7
The polyimide film F-1 is passed through a room in which a mixed gas of argon gas 7 L / min, helium gas 3 L / min and nitrogen gas 0.3 L / min is injected, and under normal pressure, the applied pressure is 3.2 kV and the output is 200 W. The plasma was discharged by inputting the electric power, and the surface layer (both sides) of the film was subjected to plasma treatment for 5 minutes to obtain a polyimide film F-9 having a plasma treatment layer. The plasma-treated surface of this film was surface-treated by immersing it in a solution (bath temperature 20 ° C.) in which an organic surface treatment agent in which 60 mg of ethylenediamine was dissolved in 1 L of methanol was dissolved for 5 minutes. The liquid was dropped. Then, it was dried by blowing compressed air for about 15 seconds. Then, the modified layer was formed by heat-processing at 300 degreeC for 3 minute (s). Further, in order to wash off excess ethylenediamine adhering to the surface, the polyimide resin layer is immersed in 750 mL of methanol (bath temperature of about 20 ° C.) for 60 seconds, and then washed with 750 mL of ion-exchanged water (bath temperature of about 20 ° C.). It was immersed for 60 seconds, and then compressed air was sprayed for about 15 seconds and dried to obtain a polyimide film F-10 having a modified layer.
得られたフィルムF-10を、銅箔1(表面粗度:Rz=0.8μm、厚さ:18μm)2枚の間に挟み、高性能高温真空プレス機で、370℃、20MPa、1分の条件でプレスを行い、両面金属張積層板を得た。ポリイミド樹脂層と金属層との接着強度は、0.4kN/mであった。 The obtained film F-10 was sandwiched between two pieces of copper foil 1 (surface roughness: Rz = 0.8 μm, thickness: 18 μm), and it was 370 ° C., 20 MPa, 1 minute with a high-performance high-temperature vacuum press. The pressing was performed under the conditions of the above to obtain a double-sided metal-clad laminate. The adhesive strength between the polyimide resin layer and the metal layer was 0.4 kN / m.
実施例8
アミノ化合物溶液として、エタノールアミン61mgをメタノール1Lに溶解した溶液を使用した以外は、実施例7と同様にして、改質層を有するポリイミドフィルムF-11を得た。ポリイミドフィルムF-11を使用して実施例7と同様にして両面金属張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.4kN/mであった。Example 8
A polyimide film F-11 having a modified layer was obtained in the same manner as in Example 7 except that a solution obtained by dissolving 61 mg of ethanolamine in 1 L of methanol was used as the amino compound solution. A double-sided metal-clad laminate was prepared in the same manner as Example 7 using the polyimide film F-11. The adhesive strength between the polyimide resin layer and the metal layer was 0.4 kN / m.
実施例9
銅箔1の代わりに、ステンレス箔1を使用した以外は、実施例7と同様にして、両面金属張積層板を得た。ポリイミド樹脂層と金属層との接着強度は、0.4kN/mであった。Example 9
A double-sided metal-clad laminate was obtained in the same manner as in Example 7 except that the stainless steel foil 1 was used instead of the copper foil 1. The adhesive strength between the polyimide resin layer and the metal layer was 0.4 kN / m.
実施例10
銅箔1の代わりに、ステンレス箔2を使用した以外は、実施例7と同様にして、両面金属張積層板を得た。ポリイミド樹脂層と金属層との接着強度は、0.5kN/mであった。Example 10
A double-sided metal-clad laminate was obtained in the same manner as in Example 7 except that the stainless steel foil 2 was used instead of the copper foil 1. The adhesive strength between the polyimide resin layer and the metal layer was 0.5 kN / m.
比較例3
実施例7におけるプラズマ処理及びアミノ化合物溶液による処理を行わず、未処理のポリイミドフィルムF-1を使用した他は、実施例7と同様にして、両面銅張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.01kN/mであった。Comparative Example 3
A double-sided copper-clad laminate was prepared in the same manner as in Example 7 except that the plasma treatment and the treatment with the amino compound solution in Example 7 were not performed and the untreated polyimide film F-1 was used. The adhesive strength between the polyimide resin layer and the metal layer was 0.01 kN / m.
比較例4
実施例7におけるアミノ化合物溶液による処理を行わず、プラズマ処理層を有するポリイミドフィルムF-9を使用した他は、実施例7と同様にして、両面銅張積層板を作製した。ポリイミド樹脂層と金属層との接着強度は、0.02kN/mであった。Comparative Example 4
A double-sided copper clad laminate was produced in the same manner as in Example 7 except that the treatment with the amino compound solution in Example 7 was not performed and the polyimide film F-9 having a plasma treatment layer was used. The adhesive strength between the polyimide resin layer and the metal layer was 0.02 kN / m.
本発明によれば、簡便な表面処理によりポリイミド樹脂層の接着力を飛躍的に向上させることができる。ファインピッチ形成に適した低粗度銅箔においても接着力を向上させることができるため、低コストで、高密度のプリント配線板に用いられる銅張積層板の製造が可能となる。また、HDDサスペンション用途にも利用可能であるため、その工業的価値は高いものである。 According to the present invention, the adhesive force of the polyimide resin layer can be dramatically improved by a simple surface treatment. Since the adhesive force can be improved even in a low-roughness copper foil suitable for fine pitch formation, a copper-clad laminate used for a high-density printed wiring board can be manufactured at low cost. Further, since it can also be used for HDD suspension applications, its industrial value is high.
Claims (9)
工程Iが、
a)ポリイミド樹脂層の表面側の層をプラズマ処理してプラズマ処理層面を形成する工程と、b)該プラズマ処理層面にアミノ化合物を含む極性溶媒溶液を塗布後、乾燥及び熱処理して表面改質層を形成する工程とを備えたことを特徴とする金属張積層板の製造方法。In the method for producing a metal-clad laminate comprising the step I of forming a modified layer on the surface of the polyimide resin layer and the step II of forming a metal layer on the surface of the modified layer,
Process I is
a) Plasma treatment of the surface of the polyimide resin layer to form a plasma treatment layer surface; b) Surface modification by applying a polar solvent solution containing an amino compound to the plasma treatment layer surface, followed by drying and heat treatment A method for producing a metal-clad laminate, comprising: forming a layer.
d)ポリイミド樹脂層の表面改質層に金属箔を重ね合わせ、熱圧着する工程からなる請求項5に記載の金属張積層板の製造方法。Step II is
The method for producing a metal-clad laminate according to claim 5, comprising d) superposing a metal foil on the surface modification layer of the polyimide resin layer and thermocompression bonding.
e)ポリイミド樹脂層の表面改質層に蒸着により金属薄膜層を形成する工程からなる請求項5に記載の金属張積層板の製造方法。Step II is
The method for producing a metal-clad laminate according to claim 5, comprising a step of e) forming a metal thin film layer by vapor deposition on the surface modification layer of the polyimide resin layer.
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JP2008528805A JP5329960B2 (en) | 2006-08-10 | 2007-08-06 | Method for modifying surface of polyimide resin layer and method for producing metal-clad laminate |
PCT/JP2007/065338 WO2008018399A1 (en) | 2006-08-10 | 2007-08-06 | Process for surface modification of polyimide resin layers and process for production of metal-clad laminates |
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JP4976269B2 (en) * | 2007-12-20 | 2012-07-18 | 新日鐵化学株式会社 | Method for producing polyimide resin layer having adhesive layer and method for producing metal-clad laminate |
JP5177395B2 (en) * | 2008-03-24 | 2013-04-03 | 地方独立行政法人 岩手県工業技術センター | Modification method of resin surface |
NL1037120C2 (en) | 2009-07-15 | 2011-01-18 | Holland Novochem Technical Coatings B V | Heat-resistant, chemical resistant, room temperature curable, solvent-free resin compositions to apply as protective coating. |
CN102008154A (en) * | 2009-08-04 | 2011-04-13 | 志圣工业股份有限公司 | Method for manufacturing footwear materials |
NL1038104C2 (en) | 2010-07-14 | 2012-01-23 | Holland Novochem Technical Coatings B V | Heat-resistant, chemical resistant, room temperature curable, solvent-free resin compositions to apply as protective coating. |
JP5725398B2 (en) * | 2010-09-10 | 2015-05-27 | 大日本印刷株式会社 | Visibility improvement sheet |
CN103677366B (en) * | 2012-09-20 | 2018-01-16 | 宸鸿科技(厦门)有限公司 | Touch panel module, contactor control device and preparation method thereof |
JP2015093874A (en) * | 2013-11-08 | 2015-05-18 | 東洋紡株式会社 | Polyimide film surface treatment method, polyimide film treated by the surface treatment method, laminate, and multilayer substrate |
CN106663504A (en) | 2014-07-14 | 2017-05-10 | 户田工业株式会社 | Method for producing conductive coating film, and conductive coating film |
CA3035577C (en) | 2016-09-30 | 2023-08-29 | Gen-Probe Incorporated | Compositions on plasma-treated surfaces |
JP7116889B2 (en) * | 2018-08-20 | 2022-08-12 | 東洋紡株式会社 | Heat-resistant polymer film, method for producing surface-treated heat-resistant polymer film, and heat-resistant polymer film roll |
CN109699124B (en) * | 2019-01-28 | 2021-07-27 | 青岛九维华盾科技研究院有限公司 | Method for preparing transparent electromagnetic shielding film by photoetching and chemical reduction method |
TW202102369A (en) * | 2019-03-29 | 2021-01-16 | 日商東洋紡股份有限公司 | Heat-resistant polymer film laminate and method for producing heat-resistant polymer film laminate |
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JPH093221A (en) * | 1995-06-20 | 1997-01-07 | Shin Etsu Chem Co Ltd | Highly adhesive polyimide film |
JPH114055A (en) * | 1997-04-18 | 1999-01-06 | Ube Ind Ltd | Flexible circuit board |
JPH1149880A (en) * | 1997-08-06 | 1999-02-23 | P I Gijutsu Kenkyusho:Kk | Treatment of surface and its adhesive agent |
JP3736600B2 (en) * | 1999-02-22 | 2006-01-18 | 株式会社カネカ | Adhesive film manufacturing method and adhesive film |
JP4699059B2 (en) * | 2004-03-25 | 2011-06-08 | 新日鐵化学株式会社 | Copper foil surface treatment method and copper clad laminate production method |
JP2006007518A (en) * | 2004-06-24 | 2006-01-12 | Bridgestone Corp | Composite film of metal thin film and plastic film and its manufacturing method |
JP2006007519A (en) * | 2004-06-24 | 2006-01-12 | Bridgestone Corp | Composite film having circuit pattern and its manufacturing method |
JP2006182019A (en) * | 2004-11-30 | 2006-07-13 | Nippon Steel Chem Co Ltd | Copper-clad laminate |
JP2007098791A (en) * | 2005-10-05 | 2007-04-19 | Shin Etsu Chem Co Ltd | Flexible one side copper-clad polyimide laminated plate |
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