JPWO2007125756A1 - 微小構造体の検査装置、及び微小構造体の検査方法 - Google Patents

微小構造体の検査装置、及び微小構造体の検査方法 Download PDF

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Publication number
JPWO2007125756A1
JPWO2007125756A1 JP2008513136A JP2008513136A JPWO2007125756A1 JP WO2007125756 A1 JPWO2007125756 A1 JP WO2007125756A1 JP 2008513136 A JP2008513136 A JP 2008513136A JP 2008513136 A JP2008513136 A JP 2008513136A JP WO2007125756 A1 JPWO2007125756 A1 JP WO2007125756A1
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Prior art keywords
microstructure
probe
nozzles
inspection apparatus
flow rate
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Pending
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JP2008513136A
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English (en)
Japanese (ja)
Inventor
池内　直樹
直樹 池内
八壁　正巳
正巳 八壁
明子 上郡
明子 上郡
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of JPWO2007125756A1 publication Critical patent/JPWO2007125756A1/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/005—Test apparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2829—Testing of circuits in sensor or actuator systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
JP2008513136A 2006-04-26 2007-04-12 微小構造体の検査装置、及び微小構造体の検査方法 Pending JPWO2007125756A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006122160 2006-04-26
JP2006122160 2006-04-26
PCT/JP2007/058069 WO2007125756A1 (ja) 2006-04-26 2007-04-12 微小構造体の検査装置、及び微小構造体の検査方法

Publications (1)

Publication Number Publication Date
JPWO2007125756A1 true JPWO2007125756A1 (ja) 2009-09-10

Family

ID=38655289

Family Applications (1)

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JP2008513136A Pending JPWO2007125756A1 (ja) 2006-04-26 2007-04-12 微小構造体の検査装置、及び微小構造体の検査方法

Country Status (5)

Country Link
US (1) US20090039908A1 (https=)
JP (1) JPWO2007125756A1 (https=)
KR (1) KR101019080B1 (https=)
TW (1) TW200806967A (https=)
WO (1) WO2007125756A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007059279B3 (de) * 2007-12-08 2010-01-21 X-Fab Semiconductor Foundries Ag Vorrichtung zum Testen der mechanisch-elektrischen Eigenschaften von mikroelektromechanischen Sensoren (MEMS)
JP5038191B2 (ja) * 2008-03-04 2012-10-03 有限会社共同設計企画 電子部品検査方法およびそれに用いられる装置
CN102301462A (zh) * 2009-02-12 2011-12-28 株式会社爱德万测试 半导体晶片测试装置
WO2012098901A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 加速度センサ
TWI460402B (zh) * 2011-08-17 2014-11-11 Hon Tech Inc Electronic unit testing machine
EP2977811A1 (de) * 2014-07-25 2016-01-27 Trumpf Laser Marking Systems AG System mit einem piezoresistiven Positionssensor
US9527731B2 (en) * 2014-10-15 2016-12-27 Nxp Usa, Inc. Methodology and system for wafer-level testing of MEMS pressure sensors
US10605831B2 (en) 2017-10-05 2020-03-31 International Business Machines Corporation Tool for automatically replacing defective pogo pins
US11047880B2 (en) 2019-01-16 2021-06-29 Star Technologies, Inc. Probing device
JP6827509B1 (ja) 2019-10-11 2021-02-10 浜松ホトニクス株式会社 ミラーデバイスの製造方法、及び、ミラーユニットの製造方法
JP7520356B2 (ja) * 2020-10-16 2024-07-23 株式会社昭和真空 測定装置
DE102021212327A1 (de) 2021-11-02 2023-05-04 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Einrichtung zum Ermitteln dynamischer Parameter einer MEMS-Vorrichtung, und MEMS-Vorrichtung
CN114460437A (zh) * 2021-12-23 2022-05-10 苏州伊欧陆系统集成有限公司 一种应用于探针台的自动喷液保护测试系统
US12216140B2 (en) * 2022-10-17 2025-02-04 The Boeing Company Tilt calibration for probe systems

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232332A (ja) * 1985-08-05 1987-02-12 Toyota Central Res & Dev Lab Inc 圧力検出素子の検定方法及び装置
JPS62170543U (https=) * 1986-04-21 1987-10-29
JPH0534371A (ja) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd 半導体加速度センサの感度測定装置
JPH0774219A (ja) * 1993-08-31 1995-03-17 Kurisutaru Device:Kk プローブ基板およびその製造方法並びにプローブ装置
JPH0933567A (ja) * 1995-07-21 1997-02-07 Akebono Brake Ind Co Ltd 半導体加速度センサのセンサチップ検査方法及び検査装置
JPH10123172A (ja) * 1996-10-21 1998-05-15 Fuji Electric Co Ltd 物理量センサの校正方法と校正装置
JPH11218548A (ja) * 1998-02-03 1999-08-10 Mitsubishi Electric Corp プローブカード
JP2001033506A (ja) * 1999-07-27 2001-02-09 Hioki Ee Corp 基板検査装置
JP2001264185A (ja) * 2000-03-21 2001-09-26 Nikon Corp レチクルのメンブレンの内部応力測定方法及び装置、並びに半導体デバイスの製造方法
JP2003273174A (ja) * 2002-03-12 2003-09-26 Seiko Instruments Inc 半導体検査装置
JP2004191208A (ja) * 2002-12-12 2004-07-08 Tokyo Electron Ltd 検査方法及び検査装置
JP2005286050A (ja) * 2004-03-29 2005-10-13 Sharp Corp 半導体ウエハの検査方法および検査装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232790B1 (en) * 1999-03-08 2001-05-15 Honeywell Inc. Method and apparatus for amplifying electrical test signals from a micromechanical device
JP4573794B2 (ja) * 2005-03-31 2010-11-04 東京エレクトロン株式会社 プローブカードおよび微小構造体の検査装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232332A (ja) * 1985-08-05 1987-02-12 Toyota Central Res & Dev Lab Inc 圧力検出素子の検定方法及び装置
JPS62170543U (https=) * 1986-04-21 1987-10-29
JPH0534371A (ja) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd 半導体加速度センサの感度測定装置
JPH0774219A (ja) * 1993-08-31 1995-03-17 Kurisutaru Device:Kk プローブ基板およびその製造方法並びにプローブ装置
JPH0933567A (ja) * 1995-07-21 1997-02-07 Akebono Brake Ind Co Ltd 半導体加速度センサのセンサチップ検査方法及び検査装置
JPH10123172A (ja) * 1996-10-21 1998-05-15 Fuji Electric Co Ltd 物理量センサの校正方法と校正装置
JPH11218548A (ja) * 1998-02-03 1999-08-10 Mitsubishi Electric Corp プローブカード
JP2001033506A (ja) * 1999-07-27 2001-02-09 Hioki Ee Corp 基板検査装置
JP2001264185A (ja) * 2000-03-21 2001-09-26 Nikon Corp レチクルのメンブレンの内部応力測定方法及び装置、並びに半導体デバイスの製造方法
JP2003273174A (ja) * 2002-03-12 2003-09-26 Seiko Instruments Inc 半導体検査装置
JP2004191208A (ja) * 2002-12-12 2004-07-08 Tokyo Electron Ltd 検査方法及び検査装置
JP2005286050A (ja) * 2004-03-29 2005-10-13 Sharp Corp 半導体ウエハの検査方法および検査装置

Also Published As

Publication number Publication date
TW200806967A (en) 2008-02-01
KR20080088638A (ko) 2008-10-02
KR101019080B1 (ko) 2011-03-07
WO2007125756A1 (ja) 2007-11-08
TWI331676B (https=) 2010-10-11
US20090039908A1 (en) 2009-02-12

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