JPS649729B2 - - Google Patents

Info

Publication number
JPS649729B2
JPS649729B2 JP56119137A JP11913781A JPS649729B2 JP S649729 B2 JPS649729 B2 JP S649729B2 JP 56119137 A JP56119137 A JP 56119137A JP 11913781 A JP11913781 A JP 11913781A JP S649729 B2 JPS649729 B2 JP S649729B2
Authority
JP
Japan
Prior art keywords
film
nitride film
silicon nitride
aluminum
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56119137A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5821827A (ja
Inventor
Hiroshi Matsuzawa
Kuniaki Kumamaru
Hiroshi Kinoshita
Shigeo Furuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56119137A priority Critical patent/JPS5821827A/ja
Publication of JPS5821827A publication Critical patent/JPS5821827A/ja
Publication of JPS649729B2 publication Critical patent/JPS649729B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP56119137A 1981-07-31 1981-07-31 半導体装置の製造方法 Granted JPS5821827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56119137A JPS5821827A (ja) 1981-07-31 1981-07-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56119137A JPS5821827A (ja) 1981-07-31 1981-07-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5821827A JPS5821827A (ja) 1983-02-08
JPS649729B2 true JPS649729B2 (enFirst) 1989-02-20

Family

ID=14753845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56119137A Granted JPS5821827A (ja) 1981-07-31 1981-07-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5821827A (enFirst)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0732152B2 (ja) * 1984-12-13 1995-04-10 株式会社半導体エネルギー研究所 半導体装置作成方法
WO1991017572A1 (fr) * 1990-05-07 1991-11-14 Canon Kabushiki Kaisha Cellule solaire
JP2814061B2 (ja) * 1994-11-07 1998-10-22 株式会社半導体エネルギー研究所 半導体装置作製方法

Also Published As

Publication number Publication date
JPS5821827A (ja) 1983-02-08

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