JPS6490521A - Cvd system - Google Patents

Cvd system

Info

Publication number
JPS6490521A
JPS6490521A JP24857387A JP24857387A JPS6490521A JP S6490521 A JPS6490521 A JP S6490521A JP 24857387 A JP24857387 A JP 24857387A JP 24857387 A JP24857387 A JP 24857387A JP S6490521 A JPS6490521 A JP S6490521A
Authority
JP
Japan
Prior art keywords
wafer
holding body
gas
driving mechanism
rotation driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24857387A
Other languages
Japanese (ja)
Inventor
Ichiro Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daiwa Handotai Sochi Kk
Original Assignee
Daiwa Handotai Sochi Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daiwa Handotai Sochi Kk filed Critical Daiwa Handotai Sochi Kk
Priority to JP24857387A priority Critical patent/JPS6490521A/en
Publication of JPS6490521A publication Critical patent/JPS6490521A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a uniform film, by employing a specific structure in which a wafer holding body is disposed in a cylinder section for wafer holding body, and a rotation driving mechanism which rotates the wafer holding body is provided. CONSTITUTION:A wafer 13 placed on a wafer holding body 12 is rotated at a constant rotating speed by a rotation driving mechanism as the wafer 13 is heated by an RF coil 20. Reaction gas is flowed from a gas inflow port 7 into a reaction tube main body 3 which is inclined to the horizontal plane, and guided smoothly on the wafer 13 placed on the holding body 12 by a reaction gas guiding member 14, thereby a predetermined film is formed on the upper surface of the wafer 13. The reacted gas is further flowed to the lower stream with respect to the holding body 12, and then ejected outward from a gas orifice 11 provided throughout a base 8. As a result, since the wafer 13 is rotated during the film formation, an uniform film is formed over the full upper surface of the wafer 13.
JP24857387A 1987-09-30 1987-09-30 Cvd system Pending JPS6490521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24857387A JPS6490521A (en) 1987-09-30 1987-09-30 Cvd system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24857387A JPS6490521A (en) 1987-09-30 1987-09-30 Cvd system

Publications (1)

Publication Number Publication Date
JPS6490521A true JPS6490521A (en) 1989-04-07

Family

ID=17180148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24857387A Pending JPS6490521A (en) 1987-09-30 1987-09-30 Cvd system

Country Status (1)

Country Link
JP (1) JPS6490521A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291114A (en) * 1989-04-29 1990-11-30 Toyoda Gosei Co Ltd Vapor growth apparatus for compound semiconductor
JP2006216597A (en) * 2005-02-01 2006-08-17 Hitachi Kokusai Electric Inc Substrate processing apparatus
WO2008001582A1 (en) 2006-06-28 2008-01-03 Sharp Kabushiki Kaisha Complex birefringent medium, polarizing plate, and liquid crystal device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02291114A (en) * 1989-04-29 1990-11-30 Toyoda Gosei Co Ltd Vapor growth apparatus for compound semiconductor
JP2006216597A (en) * 2005-02-01 2006-08-17 Hitachi Kokusai Electric Inc Substrate processing apparatus
WO2008001582A1 (en) 2006-06-28 2008-01-03 Sharp Kabushiki Kaisha Complex birefringent medium, polarizing plate, and liquid crystal device

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