JPS6489422A - Substrate wafer for semiconductor element - Google Patents

Substrate wafer for semiconductor element

Info

Publication number
JPS6489422A
JPS6489422A JP24404987A JP24404987A JPS6489422A JP S6489422 A JPS6489422 A JP S6489422A JP 24404987 A JP24404987 A JP 24404987A JP 24404987 A JP24404987 A JP 24404987A JP S6489422 A JPS6489422 A JP S6489422A
Authority
JP
Japan
Prior art keywords
wafer
hole
semiconductor element
substrate wafer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24404987A
Other languages
Japanese (ja)
Inventor
Nobuo Hayasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24404987A priority Critical patent/JPS6489422A/en
Publication of JPS6489422A publication Critical patent/JPS6489422A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a substrate wafer for semiconductor element comprising a large diameter wafer characterized by excellent uniformity in handling process, excellent supporting of the wafer and the like, by forming holes at one or more places in the large diameter wafer used for manufacturing the semiconductor elements. CONSTITUTION:Many sheets of wafers 1 are introduced into a reaction container and treated. For example, in the case of a CVD process, a hole 2 is formed in the wafer 1. Gas is exhausted through a part, where the hole 2 is formed at the center. Uniformity in supply becomes excellent in this method in comparison with a case the gas is supplied to a wafer, in which a hole is not provided.
JP24404987A 1987-09-30 1987-09-30 Substrate wafer for semiconductor element Pending JPS6489422A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24404987A JPS6489422A (en) 1987-09-30 1987-09-30 Substrate wafer for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24404987A JPS6489422A (en) 1987-09-30 1987-09-30 Substrate wafer for semiconductor element

Publications (1)

Publication Number Publication Date
JPS6489422A true JPS6489422A (en) 1989-04-03

Family

ID=17112964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24404987A Pending JPS6489422A (en) 1987-09-30 1987-09-30 Substrate wafer for semiconductor element

Country Status (1)

Country Link
JP (1) JPS6489422A (en)

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