JPS6486569A - Light emitting element material - Google Patents

Light emitting element material

Info

Publication number
JPS6486569A
JPS6486569A JP17684287A JP17684287A JPS6486569A JP S6486569 A JPS6486569 A JP S6486569A JP 17684287 A JP17684287 A JP 17684287A JP 17684287 A JP17684287 A JP 17684287A JP S6486569 A JPS6486569 A JP S6486569A
Authority
JP
Japan
Prior art keywords
layer
dope
ingap
light emitting
ingap layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17684287A
Other languages
Japanese (ja)
Inventor
Tokuzo Sukegawa
Kazuyuki Tadatomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP17684287A priority Critical patent/JPS6486569A/en
Publication of JPS6486569A publication Critical patent/JPS6486569A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a light-emitting material which is lower in cost and more economical than a green light emitting element material which is prepared by forming a GaAsyP1-y graded layer on a GaAs substrate, by a method wherein a laminated layer structure is formed together with a GaAs substrate, a mixed crystal composition in an Sn dope InGaP layer is within a specified range in terms of GaP mole fraction and the Sn dope InGaP layer has a p-n junction. CONSTITUTION:Light emitting element material has a basic dual layer structure consisting of a GaAs substrate 1 and an Sn dope InGaP layer 2 requiring a graded layer, or it may be of three-layer structure where a doner impurity dope InGaP layer is placed on the Sn dope InGaP layer or of four-layer structure where an acceptor impurity dope InGaP layer is further deposited on the doner impurity dope InGaP layer. In each case, the mixed crystal composition of Sn dope, doner impurity dope, and acceptor impurity dope InGaP layers is within 0.50-0.75 in terms of GaP mole function. Zn, for example, is diffused on the top surface of a dope n-type InGaP layer and this diffused layer is used as a P-type InGaP layer and an light emitting area containing a p-n junction PN is formed in the layer.
JP17684287A 1986-07-16 1987-07-15 Light emitting element material Pending JPS6486569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17684287A JPS6486569A (en) 1986-07-16 1987-07-15 Light emitting element material

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16750486 1986-07-16
JP16750786 1986-07-16
JP17684287A JPS6486569A (en) 1986-07-16 1987-07-15 Light emitting element material

Publications (1)

Publication Number Publication Date
JPS6486569A true JPS6486569A (en) 1989-03-31

Family

ID=27322871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17684287A Pending JPS6486569A (en) 1986-07-16 1987-07-15 Light emitting element material

Country Status (1)

Country Link
JP (1) JPS6486569A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010212446A (en) * 2009-03-10 2010-09-24 Showa Denko Kk Epitaxial wafer for light-emitting diode
US9627578B2 (en) 2010-07-06 2017-04-18 Showa Denko K.K. Epitaxial wafer for light-emitting diodes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010212446A (en) * 2009-03-10 2010-09-24 Showa Denko Kk Epitaxial wafer for light-emitting diode
CN102422445A (en) * 2009-03-10 2012-04-18 昭和电工株式会社 Epitaxial wafer for light emitting diode
US9627578B2 (en) 2010-07-06 2017-04-18 Showa Denko K.K. Epitaxial wafer for light-emitting diodes

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