JPS6486569A - Light emitting element material - Google Patents
Light emitting element materialInfo
- Publication number
- JPS6486569A JPS6486569A JP17684287A JP17684287A JPS6486569A JP S6486569 A JPS6486569 A JP S6486569A JP 17684287 A JP17684287 A JP 17684287A JP 17684287 A JP17684287 A JP 17684287A JP S6486569 A JPS6486569 A JP S6486569A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dope
- ingap
- light emitting
- ingap layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a light-emitting material which is lower in cost and more economical than a green light emitting element material which is prepared by forming a GaAsyP1-y graded layer on a GaAs substrate, by a method wherein a laminated layer structure is formed together with a GaAs substrate, a mixed crystal composition in an Sn dope InGaP layer is within a specified range in terms of GaP mole fraction and the Sn dope InGaP layer has a p-n junction. CONSTITUTION:Light emitting element material has a basic dual layer structure consisting of a GaAs substrate 1 and an Sn dope InGaP layer 2 requiring a graded layer, or it may be of three-layer structure where a doner impurity dope InGaP layer is placed on the Sn dope InGaP layer or of four-layer structure where an acceptor impurity dope InGaP layer is further deposited on the doner impurity dope InGaP layer. In each case, the mixed crystal composition of Sn dope, doner impurity dope, and acceptor impurity dope InGaP layers is within 0.50-0.75 in terms of GaP mole function. Zn, for example, is diffused on the top surface of a dope n-type InGaP layer and this diffused layer is used as a P-type InGaP layer and an light emitting area containing a p-n junction PN is formed in the layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17684287A JPS6486569A (en) | 1986-07-16 | 1987-07-15 | Light emitting element material |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16750486 | 1986-07-16 | ||
JP16750786 | 1986-07-16 | ||
JP17684287A JPS6486569A (en) | 1986-07-16 | 1987-07-15 | Light emitting element material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6486569A true JPS6486569A (en) | 1989-03-31 |
Family
ID=27322871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17684287A Pending JPS6486569A (en) | 1986-07-16 | 1987-07-15 | Light emitting element material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6486569A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010212446A (en) * | 2009-03-10 | 2010-09-24 | Showa Denko Kk | Epitaxial wafer for light-emitting diode |
US9627578B2 (en) | 2010-07-06 | 2017-04-18 | Showa Denko K.K. | Epitaxial wafer for light-emitting diodes |
-
1987
- 1987-07-15 JP JP17684287A patent/JPS6486569A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010212446A (en) * | 2009-03-10 | 2010-09-24 | Showa Denko Kk | Epitaxial wafer for light-emitting diode |
CN102422445A (en) * | 2009-03-10 | 2012-04-18 | 昭和电工株式会社 | Epitaxial wafer for light emitting diode |
US9627578B2 (en) | 2010-07-06 | 2017-04-18 | Showa Denko K.K. | Epitaxial wafer for light-emitting diodes |
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