JPS648465B2 - - Google Patents

Info

Publication number
JPS648465B2
JPS648465B2 JP5345079A JP5345079A JPS648465B2 JP S648465 B2 JPS648465 B2 JP S648465B2 JP 5345079 A JP5345079 A JP 5345079A JP 5345079 A JP5345079 A JP 5345079A JP S648465 B2 JPS648465 B2 JP S648465B2
Authority
JP
Japan
Prior art keywords
compound semiconductor
group compound
etching
ions
ion irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5345079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55145344A (en
Inventor
Toshihiko Kanayama
Toshio Tsurushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5345079A priority Critical patent/JPS55145344A/ja
Publication of JPS55145344A publication Critical patent/JPS55145344A/ja
Publication of JPS648465B2 publication Critical patent/JPS648465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP5345079A 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor Granted JPS55145344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5345079A JPS55145344A (en) 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5345079A JPS55145344A (en) 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor

Publications (2)

Publication Number Publication Date
JPS55145344A JPS55145344A (en) 1980-11-12
JPS648465B2 true JPS648465B2 (enExample) 1989-02-14

Family

ID=12943183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5345079A Granted JPS55145344A (en) 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor

Country Status (1)

Country Link
JP (1) JPS55145344A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213135A (ja) * 1983-05-19 1984-12-03 Agency Of Ind Science & Technol 半導体の微細加工方法
JP2011243657A (ja) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915114A (enExample) * 1972-06-02 1974-02-09
JPS50110284A (enExample) * 1974-02-06 1975-08-30
JPS513782A (ja) * 1974-06-28 1976-01-13 Hitachi Ltd Handotaishoriho
JPS5122372A (en) * 1974-08-19 1976-02-23 Matsushita Electric Industrial Co Ltd Gaaallas no fushokuhoho

Also Published As

Publication number Publication date
JPS55145344A (en) 1980-11-12

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