JPS6484620A - Mocvd process - Google Patents

Mocvd process

Info

Publication number
JPS6484620A
JPS6484620A JP24339287A JP24339287A JPS6484620A JP S6484620 A JPS6484620 A JP S6484620A JP 24339287 A JP24339287 A JP 24339287A JP 24339287 A JP24339287 A JP 24339287A JP S6484620 A JPS6484620 A JP S6484620A
Authority
JP
Japan
Prior art keywords
ash3
alxga1
tmal
tmga
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24339287A
Other languages
Japanese (ja)
Other versions
JP2744782B2 (en
Inventor
Hiroyuki Ieji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP62243392A priority Critical patent/JP2744782B2/en
Publication of JPS6484620A publication Critical patent/JPS6484620A/en
Application granted granted Critical
Publication of JP2744782B2 publication Critical patent/JP2744782B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To simplify the apparatus in the part needless to use a cylindrical vessel by using inert gas as a carrier gas of dimethyl zinc. CONSTITUTION:In the title MOCVD process, AsH3 (arsien) as applicable group V material; TMGa (trimethyl gallium), TMAl (trimethyl aluminum) as group III material; He balanced DMZn (dimethyl zinc) as p-dopant; and HeSe as n- dopant are used. A GaAs substrate 10 is arranged in a reactor 8 of a MOCVD apparatus to be heat-treated in AsH3 and H2 atmosphere. When TMAl, TMGa are led in at the substrate 10 temperature of 700-850 deg.C, the composition ratio of AlxGa1-xAs can be controlled by the molar fraction of the vapor simultaneously forming an AlxGa1-xAs epitaxial layer. Through these procedures, the MOCVD apparatus can be simplified in the parts needless to use a cylindrical vessel.
JP62243392A 1987-09-26 1987-09-26 MOCVD method Expired - Lifetime JP2744782B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243392A JP2744782B2 (en) 1987-09-26 1987-09-26 MOCVD method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243392A JP2744782B2 (en) 1987-09-26 1987-09-26 MOCVD method

Publications (2)

Publication Number Publication Date
JPS6484620A true JPS6484620A (en) 1989-03-29
JP2744782B2 JP2744782B2 (en) 1998-04-28

Family

ID=17103178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243392A Expired - Lifetime JP2744782B2 (en) 1987-09-26 1987-09-26 MOCVD method

Country Status (1)

Country Link
JP (1) JP2744782B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6272116A (en) * 1985-09-26 1987-04-02 Sumitomo Chem Co Ltd Doping method
JPS62186528A (en) * 1986-02-13 1987-08-14 Canon Inc Deposited film forming method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6272116A (en) * 1985-09-26 1987-04-02 Sumitomo Chem Co Ltd Doping method
JPS62186528A (en) * 1986-02-13 1987-08-14 Canon Inc Deposited film forming method

Also Published As

Publication number Publication date
JP2744782B2 (en) 1998-04-28

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