JPS6484620A - Mocvd process - Google Patents
Mocvd processInfo
- Publication number
- JPS6484620A JPS6484620A JP24339287A JP24339287A JPS6484620A JP S6484620 A JPS6484620 A JP S6484620A JP 24339287 A JP24339287 A JP 24339287A JP 24339287 A JP24339287 A JP 24339287A JP S6484620 A JPS6484620 A JP S6484620A
- Authority
- JP
- Japan
- Prior art keywords
- ash3
- alxga1
- tmal
- tmga
- dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To simplify the apparatus in the part needless to use a cylindrical vessel by using inert gas as a carrier gas of dimethyl zinc. CONSTITUTION:In the title MOCVD process, AsH3 (arsien) as applicable group V material; TMGa (trimethyl gallium), TMAl (trimethyl aluminum) as group III material; He balanced DMZn (dimethyl zinc) as p-dopant; and HeSe as n- dopant are used. A GaAs substrate 10 is arranged in a reactor 8 of a MOCVD apparatus to be heat-treated in AsH3 and H2 atmosphere. When TMAl, TMGa are led in at the substrate 10 temperature of 700-850 deg.C, the composition ratio of AlxGa1-xAs can be controlled by the molar fraction of the vapor simultaneously forming an AlxGa1-xAs epitaxial layer. Through these procedures, the MOCVD apparatus can be simplified in the parts needless to use a cylindrical vessel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62243392A JP2744782B2 (en) | 1987-09-26 | 1987-09-26 | MOCVD method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62243392A JP2744782B2 (en) | 1987-09-26 | 1987-09-26 | MOCVD method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6484620A true JPS6484620A (en) | 1989-03-29 |
JP2744782B2 JP2744782B2 (en) | 1998-04-28 |
Family
ID=17103178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62243392A Expired - Lifetime JP2744782B2 (en) | 1987-09-26 | 1987-09-26 | MOCVD method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2744782B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6272116A (en) * | 1985-09-26 | 1987-04-02 | Sumitomo Chem Co Ltd | Doping method |
JPS62186528A (en) * | 1986-02-13 | 1987-08-14 | Canon Inc | Deposited film forming method |
-
1987
- 1987-09-26 JP JP62243392A patent/JP2744782B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6272116A (en) * | 1985-09-26 | 1987-04-02 | Sumitomo Chem Co Ltd | Doping method |
JPS62186528A (en) * | 1986-02-13 | 1987-08-14 | Canon Inc | Deposited film forming method |
Also Published As
Publication number | Publication date |
---|---|
JP2744782B2 (en) | 1998-04-28 |
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Legal Events
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Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20080206 |