JPS6483593A - Apparatus for growing semiconductor single crystal - Google Patents
Apparatus for growing semiconductor single crystalInfo
- Publication number
- JPS6483593A JPS6483593A JP23988087A JP23988087A JPS6483593A JP S6483593 A JPS6483593 A JP S6483593A JP 23988087 A JP23988087 A JP 23988087A JP 23988087 A JP23988087 A JP 23988087A JP S6483593 A JPS6483593 A JP S6483593A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- raw material
- engaging member
- inner crucible
- holding tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23988087A JPS6483593A (en) | 1987-09-24 | 1987-09-24 | Apparatus for growing semiconductor single crystal |
CA000568083A CA1305909C (en) | 1987-06-01 | 1988-05-30 | Apparatus and process for growing crystals of semiconductor materials |
EP88108790A EP0293865B1 (en) | 1987-06-01 | 1988-06-01 | Apparatus and process for growing crystals of semiconductor materials |
US07/201,018 US4936949A (en) | 1987-06-01 | 1988-06-01 | Czochraski process for growing crystals using double wall crucible |
DE8888108790T DE3878990T2 (de) | 1987-06-01 | 1988-06-01 | Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien. |
US07/527,887 US5009862A (en) | 1987-06-01 | 1990-05-23 | Apparatus and process for growing crystals of semiconductor materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23988087A JPS6483593A (en) | 1987-09-24 | 1987-09-24 | Apparatus for growing semiconductor single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6483593A true JPS6483593A (en) | 1989-03-29 |
JPH0511074B2 JPH0511074B2 (ja) | 1993-02-12 |
Family
ID=17051254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23988087A Granted JPS6483593A (en) | 1987-06-01 | 1987-09-24 | Apparatus for growing semiconductor single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6483593A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5196173A (en) * | 1988-10-13 | 1993-03-23 | Mitsubishi Materials Corporation | Apparatus for process for growing crystals of semiconductor materials |
JP2007332008A (ja) * | 2006-06-19 | 2007-12-27 | Tokuyama Corp | チョクラルスキー法単結晶引き上げ装置 |
CN112048758A (zh) * | 2020-09-17 | 2020-12-08 | 乐山新天源太阳能科技有限公司 | 连续直拉单晶棒工艺 |
-
1987
- 1987-09-24 JP JP23988087A patent/JPS6483593A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5196173A (en) * | 1988-10-13 | 1993-03-23 | Mitsubishi Materials Corporation | Apparatus for process for growing crystals of semiconductor materials |
JP2007332008A (ja) * | 2006-06-19 | 2007-12-27 | Tokuyama Corp | チョクラルスキー法単結晶引き上げ装置 |
CN112048758A (zh) * | 2020-09-17 | 2020-12-08 | 乐山新天源太阳能科技有限公司 | 连续直拉单晶棒工艺 |
Also Published As
Publication number | Publication date |
---|---|
JPH0511074B2 (ja) | 1993-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080212 Year of fee payment: 15 |