JPS6481369A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6481369A
JPS6481369A JP23725087A JP23725087A JPS6481369A JP S6481369 A JPS6481369 A JP S6481369A JP 23725087 A JP23725087 A JP 23725087A JP 23725087 A JP23725087 A JP 23725087A JP S6481369 A JPS6481369 A JP S6481369A
Authority
JP
Japan
Prior art keywords
oxide film
polysilicon layer
oxygen
layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23725087A
Other languages
Japanese (ja)
Inventor
Yoshio Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP23725087A priority Critical patent/JPS6481369A/en
Publication of JPS6481369A publication Critical patent/JPS6481369A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To easily control the gate size of first and second transistors, and to prevent the gate size from decreasing due to oxidation after etching by introducing steps of implanting oxygen into a predetermined region of a polysilicon layer, heat-treating it, and altering the polysilicon layer of the oxygen implanted region to an oxide film. CONSTITUTION:After a predetermined position 24 of a silicon oxide film 23 formed on an active region on a silicon single crystal substrate 21 is opened and a first diffused layer 25 is formed by ion implanting, it is oxidized to form a first gate oxide film 27. Then, after a polysilicon layer 28 is formed on the film 23, with resist patterns 29a, 29b as masks oxygen ions are implanted to form ion implanted layers 30a-30c. Thereafter, the patterns 29a, 29b are removed, oxidized, the ion implanted layers 30a-30c of the layer 28 are converted to silicon oxide films 31a-31c as selective gates, and a second gate oxide film 32 is simultaneously formed.
JP23725087A 1987-09-24 1987-09-24 Manufacture of semiconductor device Pending JPS6481369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23725087A JPS6481369A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23725087A JPS6481369A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6481369A true JPS6481369A (en) 1989-03-27

Family

ID=17012623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23725087A Pending JPS6481369A (en) 1987-09-24 1987-09-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6481369A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321741A (en) * 1990-11-29 1994-06-14 Matsushita Electric Industrial Co., Ltd. Facsimile apparatus for determining communication failure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321741A (en) * 1990-11-29 1994-06-14 Matsushita Electric Industrial Co., Ltd. Facsimile apparatus for determining communication failure

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