JPS6481311A - Vapor phase growth device - Google Patents

Vapor phase growth device

Info

Publication number
JPS6481311A
JPS6481311A JP24001587A JP24001587A JPS6481311A JP S6481311 A JPS6481311 A JP S6481311A JP 24001587 A JP24001587 A JP 24001587A JP 24001587 A JP24001587 A JP 24001587A JP S6481311 A JPS6481311 A JP S6481311A
Authority
JP
Japan
Prior art keywords
pores
pipe
wafers
nozzle
drilled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24001587A
Other languages
English (en)
Other versions
JPH0626188B2 (ja
Inventor
Masao Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24001587A priority Critical patent/JPH0626188B2/ja
Publication of JPS6481311A publication Critical patent/JPS6481311A/ja
Publication of JPH0626188B2 publication Critical patent/JPH0626188B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP24001587A 1987-09-24 1987-09-24 気相成長装置 Expired - Lifetime JPH0626188B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24001587A JPH0626188B2 (ja) 1987-09-24 1987-09-24 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24001587A JPH0626188B2 (ja) 1987-09-24 1987-09-24 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6481311A true JPS6481311A (en) 1989-03-27
JPH0626188B2 JPH0626188B2 (ja) 1994-04-06

Family

ID=17053193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24001587A Expired - Lifetime JPH0626188B2 (ja) 1987-09-24 1987-09-24 気相成長装置

Country Status (1)

Country Link
JP (1) JPH0626188B2 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7927662B2 (en) 2004-06-24 2011-04-19 Tokyo Electron Limited CVD method in vertical CVD apparatus using different reactive gases
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
WO2011105370A1 (ja) * 2010-02-26 2011-09-01 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
WO2012120991A1 (ja) * 2011-03-08 2012-09-13 株式会社日立国際電気 基板処理装置、及び、基板の製造方法
US8361274B2 (en) * 2004-01-13 2013-01-29 Samsung Electronics Co., Ltd Etching apparatus and etching method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US8361274B2 (en) * 2004-01-13 2013-01-29 Samsung Electronics Co., Ltd Etching apparatus and etching method
US7927662B2 (en) 2004-06-24 2011-04-19 Tokyo Electron Limited CVD method in vertical CVD apparatus using different reactive gases
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
WO2011105370A1 (ja) * 2010-02-26 2011-09-01 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
JP5562409B2 (ja) * 2010-02-26 2014-07-30 株式会社日立国際電気 半導体装置の製造方法及び基板製造方法及び基板処理装置
US8889533B2 (en) 2010-02-26 2014-11-18 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
WO2012120991A1 (ja) * 2011-03-08 2012-09-13 株式会社日立国際電気 基板処理装置、及び、基板の製造方法

Also Published As

Publication number Publication date
JPH0626188B2 (ja) 1994-04-06

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