JPS55158624A - Semiconductor vapor phase growing apparatus - Google Patents

Abstract

PURPOSE: To obtain a growing layer having preferable surface flatness in a lateral semiconductor vapor phase growing apparatus by exhausting gas fed into a reaction tube while forming it in a laminar flow via a plurality of partition plates disposed in parallel after passing through substrate installing region.

CONSTITUTION: A plurality of semiconductor substrates 5 are arranged at an interval in parallel with the gas flow on the surfaces within a lateral reaction tube 1, gas containing growing composition is flowed from the upstream side thereof and exhausted from the outlet 8 provided at the end of the reaction tube 1. In this configuration, a plurality of partition plates 10 disposed at an interval in parallel with each other are arranged at the downstream of the substrates 5, and gas flow 6 after making contact with the substrates 5 is discharged as laminar flow from the outlet 8. In this manner, the reaction by-product 7 thus produced in adhered not only on the tubular wall but also on the surface of the partition plates 10 without projecting from the tubular wall to eliminate the occurrence of the turbulence and reverse flow so as to form the flat surface of the accumulated growing layers on the substrates 5. The partition plates 10 may not be flat plates but circular tubular assembly.

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