JPS6480089A - Semiconductor laser - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser, which oscillates in a stable fundamental transverse mode and has a low-noise characteristic and moreover, a high- optical output characteristic, by a method wherein the film thickness of a waveguide layer is formed into the optimized thickness. CONSTITUTION:A structure consisting of an n-type GaAs buffer layer 202, an n-type AlxGa1-xAs first clad layer 203, an AlyGa1-yAs active layer (x>y) 204, an AluGa1-uAs waveguide layer 205, a p-type AlzGa1-zAs second clad layer (z>y) 206 and a p-type GaAs contact layer 207 is formed continuously on an n-type GaAs substrate 201. Then, a mask 208 for rib etching is formed into the form of a part 209 shown by oblique lines. Subsequently, the layers 207 and 206 are etched away. Subsequently, an ZnSe buried layer 210, which is a III-VI compound semiconductor layer, is grown. Then, this is etched away into a striped form. Lastly, the formation of a p side electrode 211, a substrate polishing process on the rear of the substrate and the formation of an n side electrode 212 are performed to complete a semiconductor laser.