JPS6479368A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS6479368A JPS6479368A JP23768787A JP23768787A JPS6479368A JP S6479368 A JPS6479368 A JP S6479368A JP 23768787 A JP23768787 A JP 23768787A JP 23768787 A JP23768787 A JP 23768787A JP S6479368 A JPS6479368 A JP S6479368A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- pressure
- gas
- atm
- opened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To stabilize a discharge characteristic at all times so that a thin film having specified characteristics can be formed by ejecting a gas of the pressure higher than atm. pressure into a low-pressure gas ionization chamber while the chamber is opened. CONSTITUTION:A target electrode 6 and a substrate electrode 13 are disposed to face each other in the low-pressure gas ionization chamber 1. The upper flange 2 of the low-pressure gas ionization chamber 1 is opened at the time of mounting and dismounting a substrate 14, and a valve mechanism 22 is operated simultaneously to introduce dried gaseous nitrogen, etc., into the chamber. This gas is fed under a pressure higher than the atm. pressure into a pipe 21 and is discharged from a gas ejection port 20 into the chamber 1. The gas of the high pressure is blown to the side wall 4 of the chamber 1 or the substrate electrode 13, etc., while the chamber 1 is opened. The adsorption of water molecules, etc., in the atm. is, therefore, prevented and the discharge characteristic is stabilized. Furthermore, the intrusion of impurity components into the sputtering gas is obviated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23768787A JPS6479368A (en) | 1987-09-21 | 1987-09-21 | Sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23768787A JPS6479368A (en) | 1987-09-21 | 1987-09-21 | Sputtering device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6479368A true JPS6479368A (en) | 1989-03-24 |
Family
ID=17019019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23768787A Pending JPS6479368A (en) | 1987-09-21 | 1987-09-21 | Sputtering device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6479368A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011006462A1 (en) * | 2011-03-30 | 2012-10-04 | Von Ardenne Anlagentechnik Gmbh | Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere |
WO2020219253A1 (en) * | 2019-04-22 | 2020-10-29 | Applied Materials, Inc. | Gas flow system |
-
1987
- 1987-09-21 JP JP23768787A patent/JPS6479368A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011006462A1 (en) * | 2011-03-30 | 2012-10-04 | Von Ardenne Anlagentechnik Gmbh | Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere |
DE102011006462B4 (en) * | 2011-03-30 | 2016-01-07 | Von Ardenne Gmbh | Schleusverfahren for a vacuum process plant |
WO2020219253A1 (en) * | 2019-04-22 | 2020-10-29 | Applied Materials, Inc. | Gas flow system |
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