JPS6477955A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477955A JPS6477955A JP62235657A JP23565787A JPS6477955A JP S6477955 A JPS6477955 A JP S6477955A JP 62235657 A JP62235657 A JP 62235657A JP 23565787 A JP23565787 A JP 23565787A JP S6477955 A JPS6477955 A JP S6477955A
- Authority
- JP
- Japan
- Prior art keywords
- gate oxide
- region
- oxide film
- film
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62235657A JPS6477955A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62235657A JPS6477955A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6477955A true JPS6477955A (en) | 1989-03-23 |
| JPH0579186B2 JPH0579186B2 (enrdf_load_stackoverflow) | 1993-11-01 |
Family
ID=16989262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62235657A Granted JPS6477955A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477955A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478761A (en) * | 1989-11-24 | 1995-12-26 | Mitsubishi Denki Kabushiki Kaisha | Method of producing semiconductor device having first and second type field effect transistors |
| JP2009174908A (ja) * | 2008-01-22 | 2009-08-06 | National Institute For Agro-Environmental Science | ガス採取装置 |
-
1987
- 1987-09-18 JP JP62235657A patent/JPS6477955A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478761A (en) * | 1989-11-24 | 1995-12-26 | Mitsubishi Denki Kabushiki Kaisha | Method of producing semiconductor device having first and second type field effect transistors |
| JP2009174908A (ja) * | 2008-01-22 | 2009-08-06 | National Institute For Agro-Environmental Science | ガス採取装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0579186B2 (enrdf_load_stackoverflow) | 1993-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |