JPS647644B2 - - Google Patents
Info
- Publication number
- JPS647644B2 JPS647644B2 JP15823579A JP15823579A JPS647644B2 JP S647644 B2 JPS647644 B2 JP S647644B2 JP 15823579 A JP15823579 A JP 15823579A JP 15823579 A JP15823579 A JP 15823579A JP S647644 B2 JPS647644 B2 JP S647644B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- substrate
- angle
- parallel
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000002203 pretreatment Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 23
- 238000000034 method Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 150000003961 organosilicon compounds Chemical class 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- MPZAGHKUJRYHIK-UHFFFAOYSA-N 2-[ethyl(dimethyl)silyl]acetonitrile Chemical compound CC[Si](C)(C)CC#N MPZAGHKUJRYHIK-UHFFFAOYSA-N 0.000 description 1
- VDWPNEQMDFISMS-UHFFFAOYSA-N 2-pentyl-6-phenylbenzonitrile Chemical group CCCCCC1=CC=CC(C=2C=CC=CC=2)=C1C#N VDWPNEQMDFISMS-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical group CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- AFCAKJKUYFLYFK-UHFFFAOYSA-N tetrabutyltin Chemical compound CCCC[Sn](CCCC)(CCCC)CCCC AFCAKJKUYFLYFK-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229940094989 trimethylsilane Drugs 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S359/00—Optical: systems and elements
- Y10S359/90—Methods
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Nonlinear Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/970,496 US4261650A (en) | 1978-12-18 | 1978-12-18 | Method for producing uniform parallel alignment in liquid crystal cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5584917A JPS5584917A (en) | 1980-06-26 |
| JPS647644B2 true JPS647644B2 (en, 2012) | 1989-02-09 |
Family
ID=25517034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15823579A Granted JPS5584917A (en) | 1978-12-18 | 1979-12-07 | Pretreating substrate surface for liquid crystal display cell |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4261650A (en, 2012) |
| EP (1) | EP0012440B1 (en, 2012) |
| JP (1) | JPS5584917A (en, 2012) |
| CA (1) | CA1120887A (en, 2012) |
| DE (1) | DE2964658D1 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0453946U (en, 2012) * | 1990-09-12 | 1992-05-08 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001125A1 (de) * | 1980-01-14 | 1981-07-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer fluessigkristallanzeige |
| US4329418A (en) * | 1980-11-14 | 1982-05-11 | Lord Corporation | Organometallic semiconductor devices |
| US4386117A (en) * | 1981-11-20 | 1983-05-31 | Gordon Roy G | Coating process using alkoxy substituted silicon-bearing reactant |
| US4585310A (en) * | 1983-12-12 | 1986-04-29 | International Business Machines Corporation | Alignment layer orientation in raster scan thermally addressed smectic liquid crystal displays |
| EP0205187B1 (en) * | 1985-06-14 | 1994-03-09 | Sel Semiconductor Energy Laboratory Co., Ltd. | Optical disc memory with liquid crystal |
| US4820026A (en) * | 1986-03-20 | 1989-04-11 | Canon Kabushiki Kaisha | Ferroelectric liquid crystal device with modified polyvinyl alcohol alignment film |
| EP0275140B1 (en) * | 1987-01-09 | 1995-07-19 | Hitachi, Ltd. | Method and circuit for scanning capacitive loads |
| US5204144A (en) * | 1991-05-10 | 1993-04-20 | Celestech, Inc. | Method for plasma deposition on apertured substrates |
| EP0583374B1 (en) * | 1991-05-10 | 2000-07-26 | Celestech, Inc. | Method and apparatus for plasma deposition |
| CA2123658C (en) * | 1993-05-19 | 1999-01-19 | Willis H. Smith, Jr. | Inducing tilted parallel alignment in liquid crystals |
| FR2712309B1 (fr) * | 1993-11-10 | 1995-12-22 | Yannick Chouan | Procédé de dépôt de couches minces de silice à basse température et machine de dépôt pour la mise en Óoeuvre de ce procédé. |
| US5378494A (en) * | 1994-02-18 | 1995-01-03 | Minnesota Mining And Manufacturing Company | Method of applying a thin coating on the lower surface of a bilevel substrate |
| US6406760B1 (en) | 1996-06-10 | 2002-06-18 | Celestech, Inc. | Diamond film deposition on substrate arrays |
| US6173672B1 (en) | 1997-06-06 | 2001-01-16 | Celestech, Inc. | Diamond film deposition on substrate arrays |
| US6632483B1 (en) * | 2000-06-30 | 2003-10-14 | International Business Machines Corporation | Ion gun deposition and alignment for liquid-crystal applications |
| WO2004104682A1 (en) * | 2003-05-19 | 2004-12-02 | Kent State University | Method of plasma beam bombardment of aligning films for liquid crystals |
| JP5705551B2 (ja) * | 2008-02-29 | 2015-04-22 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ | 直接粒子ビーム蒸着によって得られる液晶用配向フィルム |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3834792A (en) * | 1972-04-10 | 1974-09-10 | Ncr | Alignment film for a liquid crystal display cell |
| JPS5438908B2 (en, 2012) * | 1973-05-11 | 1979-11-24 | ||
| US4084884A (en) * | 1974-02-21 | 1978-04-18 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Liquid crystal devices |
| US4153529A (en) * | 1975-04-21 | 1979-05-08 | Hughes Aircraft Company | Means and method for inducing uniform parallel alignment of liquid crystal material in a liquid crystal cell |
| US4038439A (en) * | 1976-09-20 | 1977-07-26 | International Business Machines Corporation | Method for producing selected alignment in liquid crystal |
-
1978
- 1978-12-18 US US05/970,496 patent/US4261650A/en not_active Expired - Lifetime
-
1979
- 1979-11-13 CA CA000339633A patent/CA1120887A/en not_active Expired
- 1979-12-07 JP JP15823579A patent/JPS5584917A/ja active Granted
- 1979-12-14 EP EP79105172A patent/EP0012440B1/en not_active Expired
- 1979-12-14 DE DE7979105172T patent/DE2964658D1/de not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0453946U (en, 2012) * | 1990-09-12 | 1992-05-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0012440B1 (en) | 1983-01-26 |
| JPS5584917A (en) | 1980-06-26 |
| CA1120887A (en) | 1982-03-30 |
| US4261650A (en) | 1981-04-14 |
| EP0012440A1 (en) | 1980-06-25 |
| DE2964658D1 (en) | 1983-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS647644B2 (en, 2012) | ||
| US6061114A (en) | Alignment of liquid crystal layers | |
| US6020946A (en) | Dry processing for liquid-crystal displays using low energy ion bombardment | |
| JP2672233B2 (ja) | 傾斜配列の液晶を基板上に形成するための方法 | |
| US6313896B1 (en) | Method for forming a multi-domain alignment layer for a liquid crystal display device | |
| US5079178A (en) | Process for etching a metal oxide coating and simultaneous deposition of a polymer film, application of this process to the production of a thin film transistor | |
| US20090316096A1 (en) | Multi-domain and ips liquid-crystal display using dry alignment | |
| JP2509082B2 (ja) | 液晶への傾き水平配向の導入方法 | |
| JPS6242254B2 (en, 2012) | ||
| US6867837B2 (en) | Liquid crystal device and manufacturing method | |
| US7728936B2 (en) | Method of alignments of liquid crystal employing magnetic thin films | |
| Motohiro et al. | Sputter-deposited SiOx films for liquid crystal alignment | |
| JP2005062877A (ja) | 液晶ディスプレイ | |
| US7184116B2 (en) | LCD having an alignment film comprising sintered carbon | |
| EP0301660B1 (en) | Display cell | |
| JPH04270316A (ja) | 多色表示装置の製造方法 | |
| AU658342B2 (en) | Surface treatment process for liquid crystal cell substrates | |
| JPH0618908A (ja) | 液晶表示装置 | |
| JPH06139844A (ja) | Ｉｔｏ導電膜およびその製造方法 | |
| US20070110922A1 (en) | Alignment Film, Method of Forming the Same, and Liquid Crystal Display Including the Same | |
| JP3355592B2 (ja) | 透明導電膜基板 | |
| KR100264165B1 (ko) | 액정표시소자 제조방법 | |
| JPH1161452A (ja) | ドライエッチング方法及びドライエッチング装置 | |
| Sprokel | An rf plasma technique for producing twisted nematic liquid crystal cells | |
| JPS63106623A (ja) | 液晶表示素子 |