CA1120887A - Method for producing uniform parallel alignment in liquid crystal cells - Google Patents

Method for producing uniform parallel alignment in liquid crystal cells

Info

Publication number
CA1120887A
CA1120887A CA000339633A CA339633A CA1120887A CA 1120887 A CA1120887 A CA 1120887A CA 000339633 A CA000339633 A CA 000339633A CA 339633 A CA339633 A CA 339633A CA 1120887 A CA1120887 A CA 1120887A
Authority
CA
Canada
Prior art keywords
liquid crystal
plasma beam
free radicals
substrate
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000339633A
Other languages
English (en)
French (fr)
Inventor
Gerard J. Sprokel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1120887A publication Critical patent/CA1120887A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00Optical: systems and elements
    • Y10S359/90Methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Nonlinear Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Physical Vapour Deposition (AREA)
CA000339633A 1978-12-18 1979-11-13 Method for producing uniform parallel alignment in liquid crystal cells Expired CA1120887A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US970,496 1978-12-18
US05/970,496 US4261650A (en) 1978-12-18 1978-12-18 Method for producing uniform parallel alignment in liquid crystal cells

Publications (1)

Publication Number Publication Date
CA1120887A true CA1120887A (en) 1982-03-30

Family

ID=25517034

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000339633A Expired CA1120887A (en) 1978-12-18 1979-11-13 Method for producing uniform parallel alignment in liquid crystal cells

Country Status (5)

Country Link
US (1) US4261650A (en, 2012)
EP (1) EP0012440B1 (en, 2012)
JP (1) JPS5584917A (en, 2012)
CA (1) CA1120887A (en, 2012)
DE (1) DE2964658D1 (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001125A1 (de) * 1980-01-14 1981-07-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer fluessigkristallanzeige
US4329418A (en) * 1980-11-14 1982-05-11 Lord Corporation Organometallic semiconductor devices
US4386117A (en) * 1981-11-20 1983-05-31 Gordon Roy G Coating process using alkoxy substituted silicon-bearing reactant
US4585310A (en) * 1983-12-12 1986-04-29 International Business Machines Corporation Alignment layer orientation in raster scan thermally addressed smectic liquid crystal displays
EP0205187B1 (en) * 1985-06-14 1994-03-09 Sel Semiconductor Energy Laboratory Co., Ltd. Optical disc memory with liquid crystal
US4820026A (en) * 1986-03-20 1989-04-11 Canon Kabushiki Kaisha Ferroelectric liquid crystal device with modified polyvinyl alcohol alignment film
EP0275140B1 (en) * 1987-01-09 1995-07-19 Hitachi, Ltd. Method and circuit for scanning capacitive loads
JPH0453946U (en, 2012) * 1990-09-12 1992-05-08
US5204144A (en) * 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
EP0583374B1 (en) * 1991-05-10 2000-07-26 Celestech, Inc. Method and apparatus for plasma deposition
CA2123658C (en) * 1993-05-19 1999-01-19 Willis H. Smith, Jr. Inducing tilted parallel alignment in liquid crystals
FR2712309B1 (fr) * 1993-11-10 1995-12-22 Yannick Chouan Procédé de dépôt de couches minces de silice à basse température et machine de dépôt pour la mise en Óoeuvre de ce procédé.
US5378494A (en) * 1994-02-18 1995-01-03 Minnesota Mining And Manufacturing Company Method of applying a thin coating on the lower surface of a bilevel substrate
US6406760B1 (en) 1996-06-10 2002-06-18 Celestech, Inc. Diamond film deposition on substrate arrays
US6173672B1 (en) 1997-06-06 2001-01-16 Celestech, Inc. Diamond film deposition on substrate arrays
US6632483B1 (en) * 2000-06-30 2003-10-14 International Business Machines Corporation Ion gun deposition and alignment for liquid-crystal applications
WO2004104682A1 (en) * 2003-05-19 2004-12-02 Kent State University Method of plasma beam bombardment of aligning films for liquid crystals
JP5705551B2 (ja) * 2008-02-29 2015-04-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung 直接粒子ビーム蒸着によって得られる液晶用配向フィルム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3834792A (en) * 1972-04-10 1974-09-10 Ncr Alignment film for a liquid crystal display cell
JPS5438908B2 (en, 2012) * 1973-05-11 1979-11-24
US4084884A (en) * 1974-02-21 1978-04-18 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Liquid crystal devices
US4153529A (en) * 1975-04-21 1979-05-08 Hughes Aircraft Company Means and method for inducing uniform parallel alignment of liquid crystal material in a liquid crystal cell
US4038439A (en) * 1976-09-20 1977-07-26 International Business Machines Corporation Method for producing selected alignment in liquid crystal

Also Published As

Publication number Publication date
EP0012440B1 (en) 1983-01-26
JPS5584917A (en) 1980-06-26
US4261650A (en) 1981-04-14
EP0012440A1 (en) 1980-06-25
DE2964658D1 (en) 1983-03-03
JPS647644B2 (en, 2012) 1989-02-09

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