JPS64747A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS64747A JPS64747A JP15582587A JP15582587A JPS64747A JP S64747 A JPS64747 A JP S64747A JP 15582587 A JP15582587 A JP 15582587A JP 15582587 A JP15582587 A JP 15582587A JP S64747 A JPS64747 A JP S64747A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- contact hole
- resist
- aluminum
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15582587A JPS64747A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15582587A JPS64747A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01747A JPH01747A (ja) | 1989-01-05 |
JPS64747A true JPS64747A (en) | 1989-01-05 |
Family
ID=15614313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15582587A Pending JPS64747A (en) | 1987-06-23 | 1987-06-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS64747A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08167657A (ja) * | 1994-12-14 | 1996-06-25 | Nec Corp | 半導体装置の製造方法 |
JP2007530883A (ja) * | 2004-03-26 | 2007-11-01 | ザ ビーオーシー グループ ピーエルシー | ギアアセンブリー |
-
1987
- 1987-06-23 JP JP15582587A patent/JPS64747A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08167657A (ja) * | 1994-12-14 | 1996-06-25 | Nec Corp | 半導体装置の製造方法 |
JP2007530883A (ja) * | 2004-03-26 | 2007-11-01 | ザ ビーオーシー グループ ピーエルシー | ギアアセンブリー |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS64747A (en) | Manufacture of semiconductor device | |
JPS5661170A (en) | Preparation of field effect transistor | |
JPS5559741A (en) | Preparation of semiconductor device | |
JPS5240968A (en) | Process for production of semiconductor device | |
JPS5732655A (en) | Semiconductor integrated circuit device | |
JPS5380183A (en) | Semiconductor device | |
JPS5661175A (en) | Thin-film solar cell | |
JPS5274883A (en) | High density connector | |
JPS5593268A (en) | Manufacture of semiconductor device | |
JPS5376752A (en) | Production of semionductor device | |
JPS5335472A (en) | Production of semiconductor unit | |
JPS5379469A (en) | Manufacture of glass mold type semiconductor rectifying device | |
JPS56167331A (en) | Manufacture of semiconductor device | |
JPS5513981A (en) | Semiconductor device | |
JPS5555546A (en) | Method of wiring semiconductor device | |
JPS6437012A (en) | Manufacture of semiconductor integrated circuit | |
JPS5272186A (en) | Production of mis type semiconductor device | |
JPS53110391A (en) | Manufacture of multi-layer wiring for semiconductor device | |
JPS558035A (en) | Semiconductor | |
JPS57184232A (en) | Manufacture of semiconductor device | |
JPS546775A (en) | Semiconductor device featuring stepped electrode structure | |
JPS57126149A (en) | Manufacture of semiconductor device | |
JPS57180138A (en) | Semiconductor device | |
JPS5259873A (en) | Manufacturing method of electrodeposition insulated wire | |
JPS6437037A (en) | Manufacture of semiconductor device |