JPS64735A - Forming method of compound semiconductor conductive layer - Google Patents
Forming method of compound semiconductor conductive layerInfo
- Publication number
- JPS64735A JPS64735A JP16820687A JP16820687A JPS64735A JP S64735 A JPS64735 A JP S64735A JP 16820687 A JP16820687 A JP 16820687A JP 16820687 A JP16820687 A JP 16820687A JP S64735 A JPS64735 A JP S64735A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- film
- impurity
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To prevent the increase of the diffusion of an implanted impurity by coating a high-concentration impurity layer and a low-concentration impurity layer with separate protective film having different properties and using annealing in a short time when activation is improved and the impurity is hardly diffused.
CONSTITUTION: An N layer 2 is formed through the implantation of silicon ions. Silicon ions 6 are implanted, using a resist 4 as a mask, thus shaping an N+ layer 5. A silicon film or a silicon oxynitride film 7 is deposited through a sputtering method capable of depositing at a low temperature of approximately 100°C or a temperature lower than 100°C or an electron cyclotron resonance type plasma CVD method. The resist 4 on the N layer and one part of an insulating film 7 are removed through lift-off. Silicon nitride films 8 are attached and shaped onto both surfaces of a sample through a method such as a plasma CVD method, and the N layer and the N+ layer are electrically activated simultaneously through short time annealing of the high-temperature holding time of 1 min or less by using a halogen lamp, etc. having a high output. The surface of the the N layer is coated with an silicon nitride and the surface of N+ layer with the protective film of the silicon oxide film or the silicon oxynitride film.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62168206A JP2528660B2 (en) | 1987-02-06 | 1987-07-06 | Method for forming compound semiconductor conductive layer |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2589887 | 1987-02-06 | ||
JP62-25898 | 1987-02-06 | ||
JP62168206A JP2528660B2 (en) | 1987-02-06 | 1987-07-06 | Method for forming compound semiconductor conductive layer |
Publications (3)
Publication Number | Publication Date |
---|---|
JPH01735A JPH01735A (en) | 1989-01-05 |
JPS64735A true JPS64735A (en) | 1989-01-05 |
JP2528660B2 JP2528660B2 (en) | 1996-08-28 |
Family
ID=26363592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62168206A Expired - Fee Related JP2528660B2 (en) | 1987-02-06 | 1987-07-06 | Method for forming compound semiconductor conductive layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2528660B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0496232A (en) * | 1990-08-04 | 1992-03-27 | Sumitomo Electric Ind Ltd | Heat treatment method for compound semiconductor wafer |
-
1987
- 1987-07-06 JP JP62168206A patent/JP2528660B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0496232A (en) * | 1990-08-04 | 1992-03-27 | Sumitomo Electric Ind Ltd | Heat treatment method for compound semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
JP2528660B2 (en) | 1996-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |