JPS647338B2 - - Google Patents

Info

Publication number
JPS647338B2
JPS647338B2 JP55086172A JP8617280A JPS647338B2 JP S647338 B2 JPS647338 B2 JP S647338B2 JP 55086172 A JP55086172 A JP 55086172A JP 8617280 A JP8617280 A JP 8617280A JP S647338 B2 JPS647338 B2 JP S647338B2
Authority
JP
Japan
Prior art keywords
silicon
oxygen
heat treatment
contained
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55086172A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712356A (en
Inventor
Masamichi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8617280A priority Critical patent/JPS5712356A/ja
Publication of JPS5712356A publication Critical patent/JPS5712356A/ja
Publication of JPS647338B2 publication Critical patent/JPS647338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating And Analyzing Materials By Characteristic Methods (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP8617280A 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon Granted JPS5712356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8617280A JPS5712356A (en) 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8617280A JPS5712356A (en) 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon

Publications (2)

Publication Number Publication Date
JPS5712356A JPS5712356A (en) 1982-01-22
JPS647338B2 true JPS647338B2 (enrdf_load_stackoverflow) 1989-02-08

Family

ID=13879329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8617280A Granted JPS5712356A (en) 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon

Country Status (1)

Country Link
JP (1) JPS5712356A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2964459B1 (fr) * 2010-09-02 2012-09-28 Commissariat Energie Atomique Procede de cartographie de la concentration en oxygene
FR2974180B1 (fr) * 2011-04-15 2013-04-26 Commissariat Energie Atomique Procede de determination de la concentration en oxygene interstitiel.
FR2989168B1 (fr) * 2012-04-06 2014-03-28 Commissariat Energie Atomique Determination de la concentration en oxygene interstitiel dans un echantillon semi-conducteur
CN115732352B (zh) * 2021-08-26 2025-06-06 长鑫存储技术有限公司 半导体设备内气体浓度的监测方法

Also Published As

Publication number Publication date
JPS5712356A (en) 1982-01-22

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