JPS5712356A - Method for measuring content of oxygen in silicon - Google Patents

Method for measuring content of oxygen in silicon

Info

Publication number
JPS5712356A
JPS5712356A JP8617280A JP8617280A JPS5712356A JP S5712356 A JPS5712356 A JP S5712356A JP 8617280 A JP8617280 A JP 8617280A JP 8617280 A JP8617280 A JP 8617280A JP S5712356 A JPS5712356 A JP S5712356A
Authority
JP
Japan
Prior art keywords
oxygen
specific resistance
content
silicon
variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8617280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS647338B2 (enrdf_load_stackoverflow
Inventor
Masamichi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8617280A priority Critical patent/JPS5712356A/ja
Publication of JPS5712356A publication Critical patent/JPS5712356A/ja
Publication of JPS647338B2 publication Critical patent/JPS647338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating And Analyzing Materials By Characteristic Methods (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP8617280A 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon Granted JPS5712356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8617280A JPS5712356A (en) 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8617280A JPS5712356A (en) 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon

Publications (2)

Publication Number Publication Date
JPS5712356A true JPS5712356A (en) 1982-01-22
JPS647338B2 JPS647338B2 (enrdf_load_stackoverflow) 1989-02-08

Family

ID=13879329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8617280A Granted JPS5712356A (en) 1980-06-25 1980-06-25 Method for measuring content of oxygen in silicon

Country Status (1)

Country Link
JP (1) JPS5712356A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103189740A (zh) * 2010-09-02 2013-07-03 原子能和代替能源委员会 测绘氧浓度的方法
CN103620394A (zh) * 2011-04-15 2014-03-05 原子能和代替能源委员会 确定填隙氧浓度的方法
US20150055677A1 (en) * 2012-04-06 2015-02-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Determination of the interstitial oxygen concentration in a semiconductor sample
CN115732352A (zh) * 2021-08-26 2023-03-03 长鑫存储技术有限公司 半导体设备内气体浓度的监测方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103189740A (zh) * 2010-09-02 2013-07-03 原子能和代替能源委员会 测绘氧浓度的方法
CN103620394A (zh) * 2011-04-15 2014-03-05 原子能和代替能源委员会 确定填隙氧浓度的方法
US9274072B2 (en) 2011-04-15 2016-03-01 Commissariat à l'Energie Atomique et aux Energies Alternatives Method for determining interstitial oxygen concentration
US20150055677A1 (en) * 2012-04-06 2015-02-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Determination of the interstitial oxygen concentration in a semiconductor sample
US9297774B2 (en) * 2012-04-06 2016-03-29 Commissariat à l'Energie Atomique et aux Energies Alternatives Determination of the interstitial oxygen concentration in a semiconductor sample
CN115732352A (zh) * 2021-08-26 2023-03-03 长鑫存储技术有限公司 半导体设备内气体浓度的监测方法

Also Published As

Publication number Publication date
JPS647338B2 (enrdf_load_stackoverflow) 1989-02-08

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