JPS6472993A - Vapor distillation of diamond-containing film to supporter - Google Patents

Vapor distillation of diamond-containing film to supporter

Info

Publication number
JPS6472993A
JPS6472993A JP63204901A JP20490188A JPS6472993A JP S6472993 A JPS6472993 A JP S6472993A JP 63204901 A JP63204901 A JP 63204901A JP 20490188 A JP20490188 A JP 20490188A JP S6472993 A JPS6472993 A JP S6472993A
Authority
JP
Japan
Prior art keywords
supporter
diamond
containing film
vapor distillation
distillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63204901A
Other languages
English (en)
Inventor
Buii Desufuandeii Chiyandora
Efu Banshiyaa Rointan
Jiei Douua Hanzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of JPS6472993A publication Critical patent/JPS6472993A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
JP63204901A 1987-08-19 1988-08-19 Vapor distillation of diamond-containing film to supporter Pending JPS6472993A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/087,141 US4816291A (en) 1987-08-19 1987-08-19 Process for making diamond, doped diamond, diamond-cubic boron nitride composite films

Publications (1)

Publication Number Publication Date
JPS6472993A true JPS6472993A (en) 1989-03-17

Family

ID=22203360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63204901A Pending JPS6472993A (en) 1987-08-19 1988-08-19 Vapor distillation of diamond-containing film to supporter

Country Status (8)

Country Link
US (1) US4816291A (ja)
EP (1) EP0304201A1 (ja)
JP (1) JPS6472993A (ja)
KR (1) KR890003982A (ja)
BR (1) BR8804197A (ja)
CA (1) CA1329791C (ja)
IL (1) IL87406A0 (ja)
ZA (1) ZA885917B (ja)

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EP0360994B1 (en) * 1988-09-20 1994-03-16 International Business Machines Corporation Apparatus and method for producing diamond films at low temperatures
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US5304461A (en) * 1989-01-10 1994-04-19 Kabushiki Kaisha Kobe Seiko Sho Process for the selective deposition of thin diamond film by gas phase synthesis
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US5669144A (en) * 1991-11-15 1997-09-23 The Gillette Company Razor blade technology
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US5295305B1 (en) * 1992-02-13 1996-08-13 Gillette Co Razor blade technology
US5783335A (en) * 1992-04-07 1998-07-21 The Regents Of The University Of California, Office Of Technology Transfer Fluidized bed deposition of diamond
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US5638251A (en) * 1995-10-03 1997-06-10 Advanced Refractory Technologies, Inc. Capacitive thin films using diamond-like nanocomposite materials
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US6082294A (en) * 1996-06-07 2000-07-04 Saint-Gobain Industrial Ceramics, Inc. Method and apparatus for depositing diamond film
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US6077572A (en) * 1997-06-18 2000-06-20 Northeastern University Method of coating edges with diamond-like carbon
US6491987B2 (en) 1999-05-03 2002-12-10 Guardian Indusries Corp. Process for depositing DLC inclusive coating with surface roughness on substrate
US6303225B1 (en) 2000-05-24 2001-10-16 Guardian Industries Corporation Hydrophilic coating including DLC on substrate
US6277480B1 (en) 1999-05-03 2001-08-21 Guardian Industries Corporation Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method
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US6284377B1 (en) 1999-05-03 2001-09-04 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
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US6261693B1 (en) 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
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CA2435124A1 (en) * 2001-01-25 2002-08-01 Millennium Pharmaceuticals, Inc. Formulation of boronic acid compounds
KR20030064942A (ko) * 2002-01-29 2003-08-06 오승준 스크래치 방지막을 가지는 조리 기구 및 그 제조방법
US8555921B2 (en) * 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US7866342B2 (en) * 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US6904935B2 (en) * 2002-12-18 2005-06-14 Masco Corporation Of Indiana Valve component with multiple surface layers
US7866343B2 (en) * 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US7390535B2 (en) * 2003-07-03 2008-06-24 Aeromet Technologies, Inc. Simple chemical vapor deposition system and methods for depositing multiple-metal aluminide coatings
US7687146B1 (en) 2004-02-11 2010-03-30 Zyvex Labs, Llc Simple tool for positional diamond mechanosynthesis, and its method of manufacture
WO2006137401A1 (ja) * 2005-06-20 2006-12-28 Nippon Telegraph And Telephone Corporation ダイヤモンド半導体素子およびその製造方法
US20070026205A1 (en) * 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
KR101165329B1 (ko) 2012-05-03 2012-07-18 한국과학기술연구원 입방정질화붕소 박막 제조방법 및 이를 통해 제조된 입방정질화붕소 박막 구조물
JP6586328B2 (ja) * 2015-09-04 2019-10-02 東京エレクトロン株式会社 被処理体を処理する方法

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Also Published As

Publication number Publication date
US4816291A (en) 1989-03-28
IL87406A0 (en) 1989-01-31
EP0304201A1 (en) 1989-02-22
KR890003982A (ko) 1989-04-19
ZA885917B (en) 1989-04-26
CA1329791C (en) 1994-05-24
BR8804197A (pt) 1989-03-14

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