JPS6466937A - On-site measurement of quantity of etching in rie device - Google Patents

On-site measurement of quantity of etching in rie device

Info

Publication number
JPS6466937A
JPS6466937A JP22381487A JP22381487A JPS6466937A JP S6466937 A JPS6466937 A JP S6466937A JP 22381487 A JP22381487 A JP 22381487A JP 22381487 A JP22381487 A JP 22381487A JP S6466937 A JPS6466937 A JP S6466937A
Authority
JP
Japan
Prior art keywords
etching
oscillation frequency
radicals
etched
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22381487A
Other languages
Japanese (ja)
Inventor
Toshihiko Takebe
Kunimitsu Yajima
Futatsu Shirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP22381487A priority Critical patent/JPS6466937A/en
Publication of JPS6466937A publication Critical patent/JPS6466937A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To measure the quantity of etching by the variation of the oscillation frequency F of quartz oscillators, and to conduct control with high accuracy by tentatively arranging and installing the quartz oscillators previously coated with a material to be etched. CONSTITUTION:A quartz oscillator 1 previously coated with the same material as a material to be etched exposed to the surface of a sample 2 is mounted to a cathode 4. A reaction chamber 5 is evacuated first. A reactive gas 9 is introduced. Since the reactive gas is used, dominant radicals (neutral species) are formed besides electrons and positive ions when the gas is changed into plasma. Radicals are beaten by positive ions and fly toward the cathode 4. When the radicals collide with a sample surface, they chemically react, and etch the material on the sample surface. The material on the surface of the quartz oscillator 1 is also etched at the same rate. The oscillation frequency of an oscillation circuit including the quartz oscillator 1 is measured. The oscillation frequency varies together with the quantity of etching. The relationship of the quantity of etching and the oscillation frequency is determined pre viously. Accordingly, the quantity of etching is detected at the arbitray time.
JP22381487A 1987-09-07 1987-09-07 On-site measurement of quantity of etching in rie device Pending JPS6466937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22381487A JPS6466937A (en) 1987-09-07 1987-09-07 On-site measurement of quantity of etching in rie device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22381487A JPS6466937A (en) 1987-09-07 1987-09-07 On-site measurement of quantity of etching in rie device

Publications (1)

Publication Number Publication Date
JPS6466937A true JPS6466937A (en) 1989-03-13

Family

ID=16804138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22381487A Pending JPS6466937A (en) 1987-09-07 1987-09-07 On-site measurement of quantity of etching in rie device

Country Status (1)

Country Link
JP (1) JPS6466937A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002012585A2 (en) * 2000-08-08 2002-02-14 Tokyo Electron Limited Processing apparatus and cleaning method
JP2019510374A (en) * 2016-03-11 2019-04-11 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Wafer processing tool with microsensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002012585A2 (en) * 2000-08-08 2002-02-14 Tokyo Electron Limited Processing apparatus and cleaning method
WO2002012585A3 (en) * 2000-08-08 2002-04-18 Tokyo Electron Ltd Processing apparatus and cleaning method
US7201174B2 (en) 2000-08-08 2007-04-10 Tokyo Electron Limited Processing apparatus and cleaning method
JP2019510374A (en) * 2016-03-11 2019-04-11 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Wafer processing tool with microsensor
JP2022020718A (en) * 2016-03-11 2022-02-01 アプライド マテリアルズ インコーポレイテッド Wafer processing tool with micro sensor
US11348846B2 (en) 2016-03-11 2022-05-31 Applied Materials, Inc. Wafer processing tool having a micro sensor

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