JPS5782474A - Microwave etching device - Google Patents
Microwave etching deviceInfo
- Publication number
- JPS5782474A JPS5782474A JP15825180A JP15825180A JPS5782474A JP S5782474 A JPS5782474 A JP S5782474A JP 15825180 A JP15825180 A JP 15825180A JP 15825180 A JP15825180 A JP 15825180A JP S5782474 A JPS5782474 A JP S5782474A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- resistance
- quartz
- shut
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE: To shut off the atmospheric air, and prevent the exertion of excessive pressure upon a titled device by forming part of an electric discharge tube by using a metallic waveguide, and disposing a member having good microwave permeability and vacuum resistance to part of the waveguide.
CONSTITUTION: Part of an electric discharge chamber is formed of a metal-made waveguide 2, and is communicated with a vacuum chamber 6. A shield plate 9 consisting of a material such as quartz or ceramics having good microwave permeability and vacuum resistance is disposed in the part of a narrow cross section of such waveguide 2, so that the inside of the main waveguide 2 is shut off from the atmospheric air in a microwave guide 10. Thereby, the resistance of a discharge chamber 11 to the atmospheric pressure is increased and therefore a relatively thin material of quartz or the like is usable for the wall 11 and the reduction in cost is achieved.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15825180A JPS5782474A (en) | 1980-11-12 | 1980-11-12 | Microwave etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15825180A JPS5782474A (en) | 1980-11-12 | 1980-11-12 | Microwave etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5782474A true JPS5782474A (en) | 1982-05-22 |
Family
ID=15667543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15825180A Pending JPS5782474A (en) | 1980-11-12 | 1980-11-12 | Microwave etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5782474A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5984526A (en) * | 1982-11-08 | 1984-05-16 | Fujitsu Ltd | Microwave processing apparatus |
| JPS60105234A (en) * | 1983-11-14 | 1985-06-10 | Hitachi Ltd | Microwave plasma processing apparatus |
| JPS6383278A (en) * | 1986-09-29 | 1988-04-13 | Canon Inc | Device for forming functional deposited film by microwave plasma cvd method |
| JPS63126196A (en) * | 1986-11-17 | 1988-05-30 | 日本電信電話株式会社 | Plasma source employing microwave excitation |
| JPS63209553A (en) * | 1987-02-27 | 1988-08-31 | Dainippon Pharmaceut Co Ltd | Gel and production thereof |
| JPH01194419A (en) * | 1988-01-29 | 1989-08-04 | Tel Sagami Ltd | Plasma processor |
| JPH08246146A (en) * | 1996-03-18 | 1996-09-24 | Hitachi Ltd | Method for plasma treating and device therefor |
-
1980
- 1980-11-12 JP JP15825180A patent/JPS5782474A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5984526A (en) * | 1982-11-08 | 1984-05-16 | Fujitsu Ltd | Microwave processing apparatus |
| JPS60105234A (en) * | 1983-11-14 | 1985-06-10 | Hitachi Ltd | Microwave plasma processing apparatus |
| JPS6383278A (en) * | 1986-09-29 | 1988-04-13 | Canon Inc | Device for forming functional deposited film by microwave plasma cvd method |
| JPS63126196A (en) * | 1986-11-17 | 1988-05-30 | 日本電信電話株式会社 | Plasma source employing microwave excitation |
| JPS63209553A (en) * | 1987-02-27 | 1988-08-31 | Dainippon Pharmaceut Co Ltd | Gel and production thereof |
| JPH0659175B2 (en) * | 1987-02-27 | 1994-08-10 | 大日本製薬株式会社 | Gel and method for producing the same |
| JPH01194419A (en) * | 1988-01-29 | 1989-08-04 | Tel Sagami Ltd | Plasma processor |
| JPH08246146A (en) * | 1996-03-18 | 1996-09-24 | Hitachi Ltd | Method for plasma treating and device therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56152973A (en) | Sputter etching device | |
| EP0749149A3 (en) | Plasma processing apparatus | |
| ATE118924T1 (en) | PLASMA ETCHING DEVICE WITH MAGNETIC FIELDS ON THE SURFACE. | |
| JPS5782474A (en) | Microwave etching device | |
| JPS56105480A (en) | Plasma etching method | |
| JPS5441075A (en) | Conveying device between atmospheric pressure and vacuum | |
| JPS5647572A (en) | Etching method of indium oxide film | |
| JPS55101853A (en) | Method of fabricating comparison electrode with fet | |
| JPS57206046A (en) | Wafer conveying device | |
| JPS5472534A (en) | High frequency heating device | |
| JPS5524941A (en) | Dry etching apparatus | |
| JPS5732637A (en) | Dry etching apparatus | |
| JPS53114679A (en) | Plasm etching unit | |
| JPS5414679A (en) | Plasma etching device | |
| JPS57117240A (en) | High-frequency sputtering etching device | |
| JPS5547381A (en) | Plasma etching method | |
| JPS53126859A (en) | Field radiation type electronic gun | |
| JPS52122284A (en) | Sputtering device having bias electrode | |
| JPS56115885A (en) | Evacuating apparatus | |
| JPS57174465A (en) | High frequency ion etching device | |
| JPS57107539A (en) | Hollow-cathode device | |
| JPS52122283A (en) | Sputtering device having bias mechanism | |
| JPS56157336A (en) | Surface treatment of rubber | |
| JPS56134729A (en) | Production of thin film by sputtering | |
| JPS5329075A (en) | Plasma treating apparatus of semiconductor substrates |