JPS646537B2 - - Google Patents
Info
- Publication number
- JPS646537B2 JPS646537B2 JP58227176A JP22717683A JPS646537B2 JP S646537 B2 JPS646537 B2 JP S646537B2 JP 58227176 A JP58227176 A JP 58227176A JP 22717683 A JP22717683 A JP 22717683A JP S646537 B2 JPS646537 B2 JP S646537B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- wafer
- layer
- ion implantation
- gettering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 claims description 20
- 238000005247 gettering Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 230000000694 effects Effects 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 23
- 230000015556 catabolic process Effects 0.000 description 14
- 239000013078 crystal Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58227176A JPS60117738A (ja) | 1983-11-30 | 1983-11-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58227176A JPS60117738A (ja) | 1983-11-30 | 1983-11-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60117738A JPS60117738A (ja) | 1985-06-25 |
| JPS646537B2 true JPS646537B2 (cs) | 1989-02-03 |
Family
ID=16856672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58227176A Granted JPS60117738A (ja) | 1983-11-30 | 1983-11-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60117738A (cs) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5236872A (en) * | 1991-03-21 | 1993-08-17 | U.S. Philips Corp. | Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer |
| US5757063A (en) * | 1994-03-25 | 1998-05-26 | Kabushiki Kaisha Toshiba | Semiconductor device having an extrinsic gettering film |
| JP3524141B2 (ja) * | 1994-03-25 | 2004-05-10 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2011253983A (ja) * | 2010-06-03 | 2011-12-15 | Disco Abrasive Syst Ltd | シリコンウェーハへのゲッタリング層付与方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396666A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Manufacture of semiconductor device with pn junction |
| JPS5666046A (en) * | 1979-11-01 | 1981-06-04 | Sony Corp | Processing method of semiconductor substrate |
-
1983
- 1983-11-30 JP JP58227176A patent/JPS60117738A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60117738A (ja) | 1985-06-25 |
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