JPS60117738A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60117738A
JPS60117738A JP58227176A JP22717683A JPS60117738A JP S60117738 A JPS60117738 A JP S60117738A JP 58227176 A JP58227176 A JP 58227176A JP 22717683 A JP22717683 A JP 22717683A JP S60117738 A JPS60117738 A JP S60117738A
Authority
JP
Japan
Prior art keywords
heat treatment
semiconductor device
layer
ion implantation
gettering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58227176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS646537B2 (cs
Inventor
Shunichi Sato
俊一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP58227176A priority Critical patent/JPS60117738A/ja
Publication of JPS60117738A publication Critical patent/JPS60117738A/ja
Publication of JPS646537B2 publication Critical patent/JPS646537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP58227176A 1983-11-30 1983-11-30 半導体装置の製造方法 Granted JPS60117738A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58227176A JPS60117738A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58227176A JPS60117738A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60117738A true JPS60117738A (ja) 1985-06-25
JPS646537B2 JPS646537B2 (cs) 1989-02-03

Family

ID=16856672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58227176A Granted JPS60117738A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60117738A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590279A (ja) * 1991-03-21 1993-04-09 Philips Gloeilampenfab:Nv 半導体装置の製造方法
JPH07263453A (ja) * 1994-03-25 1995-10-13 Toshiba Corp 半導体装置及びその製造方法
US5757063A (en) * 1994-03-25 1998-05-26 Kabushiki Kaisha Toshiba Semiconductor device having an extrinsic gettering film
JP2011253983A (ja) * 2010-06-03 2011-12-15 Disco Abrasive Syst Ltd シリコンウェーハへのゲッタリング層付与方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396666A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Manufacture of semiconductor device with pn junction
JPS5666046A (en) * 1979-11-01 1981-06-04 Sony Corp Processing method of semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396666A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Manufacture of semiconductor device with pn junction
JPS5666046A (en) * 1979-11-01 1981-06-04 Sony Corp Processing method of semiconductor substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590279A (ja) * 1991-03-21 1993-04-09 Philips Gloeilampenfab:Nv 半導体装置の製造方法
JPH07263453A (ja) * 1994-03-25 1995-10-13 Toshiba Corp 半導体装置及びその製造方法
US5698891A (en) * 1994-03-25 1997-12-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US5757063A (en) * 1994-03-25 1998-05-26 Kabushiki Kaisha Toshiba Semiconductor device having an extrinsic gettering film
JP2011253983A (ja) * 2010-06-03 2011-12-15 Disco Abrasive Syst Ltd シリコンウェーハへのゲッタリング層付与方法

Also Published As

Publication number Publication date
JPS646537B2 (cs) 1989-02-03

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