JPS6464370A - Manufacture of cadmium telluride thin film - Google Patents
Manufacture of cadmium telluride thin filmInfo
- Publication number
- JPS6464370A JPS6464370A JP62222317A JP22231787A JPS6464370A JP S6464370 A JPS6464370 A JP S6464370A JP 62222317 A JP62222317 A JP 62222317A JP 22231787 A JP22231787 A JP 22231787A JP S6464370 A JPS6464370 A JP S6464370A
- Authority
- JP
- Japan
- Prior art keywords
- film
- powder
- mixture
- cdte
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62222317A JPS6464370A (en) | 1987-09-04 | 1987-09-04 | Manufacture of cadmium telluride thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62222317A JPS6464370A (en) | 1987-09-04 | 1987-09-04 | Manufacture of cadmium telluride thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6464370A true JPS6464370A (en) | 1989-03-10 |
| JPH054826B2 JPH054826B2 (cs) | 1993-01-20 |
Family
ID=16780464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62222317A Granted JPS6464370A (en) | 1987-09-04 | 1987-09-04 | Manufacture of cadmium telluride thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6464370A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139814A (en) * | 1987-07-11 | 1992-08-18 | Usui Kokusai Sangyo Kaisha | Method of manufacturing metal pipes coated with tin or tin based alloys |
| CN102392282A (zh) * | 2011-11-26 | 2012-03-28 | 济南大学 | 一种在水相碱性条件下电化学制备碲化镉半导体薄膜的方法 |
-
1987
- 1987-09-04 JP JP62222317A patent/JPS6464370A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139814A (en) * | 1987-07-11 | 1992-08-18 | Usui Kokusai Sangyo Kaisha | Method of manufacturing metal pipes coated with tin or tin based alloys |
| CN102392282A (zh) * | 2011-11-26 | 2012-03-28 | 济南大学 | 一种在水相碱性条件下电化学制备碲化镉半导体薄膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH054826B2 (cs) | 1993-01-20 |
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