JPS6464370A - Manufacture of cadmium telluride thin film - Google Patents

Manufacture of cadmium telluride thin film

Info

Publication number
JPS6464370A
JPS6464370A JP62222317A JP22231787A JPS6464370A JP S6464370 A JPS6464370 A JP S6464370A JP 62222317 A JP62222317 A JP 62222317A JP 22231787 A JP22231787 A JP 22231787A JP S6464370 A JPS6464370 A JP S6464370A
Authority
JP
Japan
Prior art keywords
film
powder
mixture
cdte
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62222317A
Other languages
Japanese (ja)
Other versions
JPH054826B2 (en
Inventor
Naoki Suyama
Noriyuki Ueno
Kuniyoshi Omura
Hiroyuki Kitamura
Takeshi Hibino
Mikio Murozono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62222317A priority Critical patent/JPS6464370A/en
Publication of JPS6464370A publication Critical patent/JPS6464370A/en
Publication of JPH054826B2 publication Critical patent/JPH054826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate

Abstract

PURPOSE:To form a large-area thin film at a low cost by a method wherein, out of two films formed by coating and sintering a pasty mixture which has been formed by crushing a Cd powder and a Te powder in the water, a porous film is removed and a thickness is made within a specific range. CONSTITUTION:Water is added to a mixture of a Cd powder and a Te powder and these powders are crushed; an obtained mixture containing a CdTe compound is dried; propylene glycol is added to the dried powder in order to obtain a pasty mixture; this mixture is screen-printed. In succession, the printed mixture is dried in order to evaporate the propylene glycol. After this drying operation, a substrate is put in a baking boat composed of alumina; a lid 17 composed of alumina and having an opening 15 is placed on the boat; this baking boat is baked. By this baking operation, a dense CdTe film 9 with an average film thickness of 0.5-3.0mum is formed by CdCl2 remaining in CdS near the surface of CdS coming into contact with a CdS sintered film 8; a porous CdTe film 10 is formed by evaporation of Cd and Te, Then, if ultrasonic waves are impressed on this film in pure water, the porous CdTe film 10 is removed.
JP62222317A 1987-09-04 1987-09-04 Manufacture of cadmium telluride thin film Granted JPS6464370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62222317A JPS6464370A (en) 1987-09-04 1987-09-04 Manufacture of cadmium telluride thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62222317A JPS6464370A (en) 1987-09-04 1987-09-04 Manufacture of cadmium telluride thin film

Publications (2)

Publication Number Publication Date
JPS6464370A true JPS6464370A (en) 1989-03-10
JPH054826B2 JPH054826B2 (en) 1993-01-20

Family

ID=16780464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62222317A Granted JPS6464370A (en) 1987-09-04 1987-09-04 Manufacture of cadmium telluride thin film

Country Status (1)

Country Link
JP (1) JPS6464370A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139814A (en) * 1987-07-11 1992-08-18 Usui Kokusai Sangyo Kaisha Method of manufacturing metal pipes coated with tin or tin based alloys
CN102392282A (en) * 2011-11-26 2012-03-28 济南大学 Method for electrochemical preparation of cadmium telluride semiconductor film under alkaline water phase condition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139814A (en) * 1987-07-11 1992-08-18 Usui Kokusai Sangyo Kaisha Method of manufacturing metal pipes coated with tin or tin based alloys
CN102392282A (en) * 2011-11-26 2012-03-28 济南大学 Method for electrochemical preparation of cadmium telluride semiconductor film under alkaline water phase condition

Also Published As

Publication number Publication date
JPH054826B2 (en) 1993-01-20

Similar Documents

Publication Publication Date Title
WO2002084708A3 (en) Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
CA2271412A1 (en) Photovoltaic device and its method of preparation
JPS5734447A (en) Production of film structure oxygen sensor element
JPS51147171A (en) Flat surface multilayer cathode
JPS6464370A (en) Manufacture of cadmium telluride thin film
JPS5614149A (en) Forming method for solid-state electrolyte thin film for oxygen sensor
JPS54130497A (en) Production of indium oxide ( ) film
JPS5687233A (en) Magnetic recording medium
JPS53120527A (en) Forming method of positive type radiation sensitive material layer
JPS5614408A (en) Manufacture of solid electrolyte
JPS55108781A (en) Light receiving element
JPS5330678A (en) Modified polypropylene composite films
JPS5440073A (en) Film forming method
JPS5617357A (en) Electrophotographic material with lasting electrical conductivity
JPS6424360A (en) Manufacture of alkaline storage battery plate
JPS5593128A (en) All solid state type electrochromic display cell
JPS54114096A (en) Photoelectric conversion device
JPS57189342A (en) Manufacture of magnetic recording medium
JPS5258473A (en) Production of semiconductor device
JPS52149105A (en) Preparation of magnetic disc with high recording density
JPS5376747A (en) Forming method of insulation film
JPS5570077A (en) Preparation of cadmium sulfide sintered film
JPS54159194A (en) Manufacture for cadmium sulfide sintering film
JPS56134729A (en) Production of thin film by sputtering
JPS52109380A (en) Convertor for photoelectric