JPS6464325A - Electrode for plasma etching - Google Patents

Electrode for plasma etching

Info

Publication number
JPS6464325A
JPS6464325A JP22028487A JP22028487A JPS6464325A JP S6464325 A JPS6464325 A JP S6464325A JP 22028487 A JP22028487 A JP 22028487A JP 22028487 A JP22028487 A JP 22028487A JP S6464325 A JPS6464325 A JP S6464325A
Authority
JP
Japan
Prior art keywords
electrode
base material
film
cvd method
oxide nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22028487A
Other languages
Japanese (ja)
Inventor
Hiroaki Tanji
Kenji Kadota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP22028487A priority Critical patent/JPS6464325A/en
Publication of JPS6464325A publication Critical patent/JPS6464325A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To remarkably prolong the life of an electrode and to improve production efficiency by forming an Si and/or Al oxide nitride polycrystalline film on a graphite base material. CONSTITUTION:An Si and/or Al oxide nitride is formed as a polycrystalline film by a high temperature thermal CVD method which utilizes thermal energy and a thermal plasma CVD method which utilizes plasma with the previous CVD method. The polycrystalline film of the Si and/or Al oxide nitride is precipitated on the graphite base material formed in a desired electrode shape as an electrode. The base material graphite which has high density and high purity, and rough surface of certain degree is preferable since it can obtain a high bonding strength. The thickness of the film is preferably 5mum or more to form a continuously dense film and 500mum or less to prevent it from self- cracking or exfoliating due to an internal stress.
JP22028487A 1987-09-04 1987-09-04 Electrode for plasma etching Pending JPS6464325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22028487A JPS6464325A (en) 1987-09-04 1987-09-04 Electrode for plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22028487A JPS6464325A (en) 1987-09-04 1987-09-04 Electrode for plasma etching

Publications (1)

Publication Number Publication Date
JPS6464325A true JPS6464325A (en) 1989-03-10

Family

ID=16748760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22028487A Pending JPS6464325A (en) 1987-09-04 1987-09-04 Electrode for plasma etching

Country Status (1)

Country Link
JP (1) JPS6464325A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
JP2007081381A (en) * 2005-08-18 2007-03-29 Mitsubishi Materials Corp Silicon ring for use of plasma etcher

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779642A (en) * 1980-11-06 1982-05-18 Toshiba Corp Manufacture of semiconductor device
JPS58209111A (en) * 1982-05-31 1983-12-06 Toshiba Corp Plasma generator
JPS6116524A (en) * 1984-07-03 1986-01-24 Nec Corp Dry etching device
JPS61246382A (en) * 1985-04-24 1986-11-01 Nec Corp Dry etching device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779642A (en) * 1980-11-06 1982-05-18 Toshiba Corp Manufacture of semiconductor device
JPS58209111A (en) * 1982-05-31 1983-12-06 Toshiba Corp Plasma generator
JPS6116524A (en) * 1984-07-03 1986-01-24 Nec Corp Dry etching device
JPS61246382A (en) * 1985-04-24 1986-11-01 Nec Corp Dry etching device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138381A (en) * 1989-10-20 1991-06-12 Ibiden Co Ltd Electrode plate for plasma etching
JP2007081381A (en) * 2005-08-18 2007-03-29 Mitsubishi Materials Corp Silicon ring for use of plasma etcher

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