JPS6464324A - Electrode for plasma etching - Google Patents
Electrode for plasma etchingInfo
- Publication number
- JPS6464324A JPS6464324A JP22028387A JP22028387A JPS6464324A JP S6464324 A JPS6464324 A JP S6464324A JP 22028387 A JP22028387 A JP 22028387A JP 22028387 A JP22028387 A JP 22028387A JP S6464324 A JPS6464324 A JP S6464324A
- Authority
- JP
- Japan
- Prior art keywords
- film
- base material
- electrode
- graphite base
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To remarkably prolong the life of an electrode and to improve production efficiency by forming a polycrystalline Si3N4 or AlN film on a graphite base material. CONSTITUTION:A high temperature thermal CVD method which utilizes heat and a thermal plasma CVD method which utilizes plasma with the previous CVD method are preferable as a method of forming a polycrystalline Si3N4 or AlN film. A polycrystalline Si3N4 or AlN protective film is general to precipitate it on a graphite base material formed in a desired electrode shape as an electrode, but after the protective film is formed on the graphite base material, it may be formed in the electrode shape. The graphite base material preferably has high density and high strength, and a rigid bonding strength is obtained by roughing the surface. The thickness of the film is preferably 5mum or more to form a continuously dense film and 500mum or less to prevent it from self- cracking or exfoliating due to an internal stress.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22028387A JPS6464324A (en) | 1987-09-04 | 1987-09-04 | Electrode for plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22028387A JPS6464324A (en) | 1987-09-04 | 1987-09-04 | Electrode for plasma etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464324A true JPS6464324A (en) | 1989-03-10 |
Family
ID=16748744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22028387A Pending JPS6464324A (en) | 1987-09-04 | 1987-09-04 | Electrode for plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464324A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138381A (en) * | 1989-10-20 | 1991-06-12 | Ibiden Co Ltd | Electrode plate for plasma etching |
EP0595054A1 (en) * | 1992-10-30 | 1994-05-04 | Applied Materials, Inc. | Method for processing semiconductor wafers at temperatures exceeding 400 degrees C. |
JPH06163428A (en) * | 1992-11-26 | 1994-06-10 | Ngk Insulators Ltd | Corrosion-resistant member |
JPH07153370A (en) * | 1993-11-30 | 1995-06-16 | Kyocera Corp | Discharge tube |
US5482749A (en) * | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
US5510297A (en) * | 1993-06-28 | 1996-04-23 | Applied Materials, Inc. | Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor |
US6090706A (en) * | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209111A (en) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | Plasma generator |
JPS6116524A (en) * | 1984-07-03 | 1986-01-24 | Nec Corp | Dry etching device |
JPS61246382A (en) * | 1985-04-24 | 1986-11-01 | Nec Corp | Dry etching device |
-
1987
- 1987-09-04 JP JP22028387A patent/JPS6464324A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209111A (en) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | Plasma generator |
JPS6116524A (en) * | 1984-07-03 | 1986-01-24 | Nec Corp | Dry etching device |
JPS61246382A (en) * | 1985-04-24 | 1986-11-01 | Nec Corp | Dry etching device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03138381A (en) * | 1989-10-20 | 1991-06-12 | Ibiden Co Ltd | Electrode plate for plasma etching |
EP0595054A1 (en) * | 1992-10-30 | 1994-05-04 | Applied Materials, Inc. | Method for processing semiconductor wafers at temperatures exceeding 400 degrees C. |
JPH06163428A (en) * | 1992-11-26 | 1994-06-10 | Ngk Insulators Ltd | Corrosion-resistant member |
US5482749A (en) * | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
US5510297A (en) * | 1993-06-28 | 1996-04-23 | Applied Materials, Inc. | Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor |
US6090706A (en) * | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
JPH07153370A (en) * | 1993-11-30 | 1995-06-16 | Kyocera Corp | Discharge tube |
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