JPS6459978A - Method of controlling forbidden band width of semiconductor superlattice - Google Patents
Method of controlling forbidden band width of semiconductor superlatticeInfo
- Publication number
- JPS6459978A JPS6459978A JP62217503A JP21750387A JPS6459978A JP S6459978 A JPS6459978 A JP S6459978A JP 62217503 A JP62217503 A JP 62217503A JP 21750387 A JP21750387 A JP 21750387A JP S6459978 A JPS6459978 A JP S6459978A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pressure
- layer structure
- forbidden band
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62217503A JPS6459978A (en) | 1987-08-31 | 1987-08-31 | Method of controlling forbidden band width of semiconductor superlattice |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62217503A JPS6459978A (en) | 1987-08-31 | 1987-08-31 | Method of controlling forbidden band width of semiconductor superlattice |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459978A true JPS6459978A (en) | 1989-03-07 |
Family
ID=16705255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62217503A Pending JPS6459978A (en) | 1987-08-31 | 1987-08-31 | Method of controlling forbidden band width of semiconductor superlattice |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459978A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0245995A (ja) * | 1988-08-08 | 1990-02-15 | Nippon Telegr & Teleph Corp <Ntt> | 量子井戸構造型半導体レーザー装置 |
JPH0418765A (ja) * | 1990-05-14 | 1992-01-22 | Mitsui Mining & Smelting Co Ltd | 半導体受光素子 |
JPH0418766A (ja) * | 1990-05-14 | 1992-01-22 | Mitsui Mining & Smelting Co Ltd | 半導体受光素子 |
-
1987
- 1987-08-31 JP JP62217503A patent/JPS6459978A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0245995A (ja) * | 1988-08-08 | 1990-02-15 | Nippon Telegr & Teleph Corp <Ntt> | 量子井戸構造型半導体レーザー装置 |
JPH0418765A (ja) * | 1990-05-14 | 1992-01-22 | Mitsui Mining & Smelting Co Ltd | 半導体受光素子 |
JPH0418766A (ja) * | 1990-05-14 | 1992-01-22 | Mitsui Mining & Smelting Co Ltd | 半導体受光素子 |
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