JPS6459809A - Formation of low-stress thin film and its manufacture - Google Patents

Formation of low-stress thin film and its manufacture

Info

Publication number
JPS6459809A
JPS6459809A JP21502187A JP21502187A JPS6459809A JP S6459809 A JPS6459809 A JP S6459809A JP 21502187 A JP21502187 A JP 21502187A JP 21502187 A JP21502187 A JP 21502187A JP S6459809 A JPS6459809 A JP S6459809A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor substrate
specimen
formation
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21502187A
Other languages
Japanese (ja)
Inventor
Katsumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21502187A priority Critical patent/JPS6459809A/en
Publication of JPS6459809A publication Critical patent/JPS6459809A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce an internal stress of a thin film by a method wherein, while a curvature in a reverse direction is being exerted on a semiconductor substrate against a curvature to be caused on the semiconductor substrate due to the formation of the thin film, the thin film is deposited on the substrate. CONSTITUTION:A main plane of a specimen support tool 12 is polished in advance to be a protruding face of a prescribed curvature. A semiconductor substrate 11 is placed on the main plane 12a of the specimen support tool 12; a peripheral part of the semiconductor substrate 11 is fixed to a specimen stage 13 by using a specimen-fixing spring 14. In this state, a thin film is deposited on the semiconductor substrate 11; the semiconductor substrate 11 is detached from the specimen support tool 12; a warpage generated on the semiconductor substrate 11 is removed by a restoring force of the semiconductor substrate 11 and by the tension of the formed thin film; the flat substrate is obtained. Due to this set-up, the tension of the thin film is relaxed; the low-stress thin film can be obtained.
JP21502187A 1987-08-31 1987-08-31 Formation of low-stress thin film and its manufacture Pending JPS6459809A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21502187A JPS6459809A (en) 1987-08-31 1987-08-31 Formation of low-stress thin film and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21502187A JPS6459809A (en) 1987-08-31 1987-08-31 Formation of low-stress thin film and its manufacture

Publications (1)

Publication Number Publication Date
JPS6459809A true JPS6459809A (en) 1989-03-07

Family

ID=16665422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21502187A Pending JPS6459809A (en) 1987-08-31 1987-08-31 Formation of low-stress thin film and its manufacture

Country Status (1)

Country Link
JP (1) JPS6459809A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137638A (en) * 1987-11-24 1989-05-30 Canon Inc Thin film forming apparatus
US6884718B2 (en) * 2003-03-18 2005-04-26 Micron Technology, Inc. Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby
JP2015098411A (en) * 2013-11-19 2015-05-28 古河機械金属株式会社 Method and apparatus for manufacturing nitride semiconductor substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49104571A (en) * 1973-02-07 1974-10-03
JPS58182822A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Removing apparatus for internal stress in thin film
JPS62274618A (en) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp Epitaxial crystal growth

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49104571A (en) * 1973-02-07 1974-10-03
JPS58182822A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Removing apparatus for internal stress in thin film
JPS62274618A (en) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp Epitaxial crystal growth

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137638A (en) * 1987-11-24 1989-05-30 Canon Inc Thin film forming apparatus
US6884718B2 (en) * 2003-03-18 2005-04-26 Micron Technology, Inc. Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby
US7358554B2 (en) 2003-03-18 2008-04-15 Micron Technology, Inc. Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby
JP2015098411A (en) * 2013-11-19 2015-05-28 古河機械金属株式会社 Method and apparatus for manufacturing nitride semiconductor substrate

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