JPS6459809A - Formation of low-stress thin film and its manufacture - Google Patents
Formation of low-stress thin film and its manufactureInfo
- Publication number
- JPS6459809A JPS6459809A JP21502187A JP21502187A JPS6459809A JP S6459809 A JPS6459809 A JP S6459809A JP 21502187 A JP21502187 A JP 21502187A JP 21502187 A JP21502187 A JP 21502187A JP S6459809 A JPS6459809 A JP S6459809A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor substrate
- specimen
- formation
- curvature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce an internal stress of a thin film by a method wherein, while a curvature in a reverse direction is being exerted on a semiconductor substrate against a curvature to be caused on the semiconductor substrate due to the formation of the thin film, the thin film is deposited on the substrate. CONSTITUTION:A main plane of a specimen support tool 12 is polished in advance to be a protruding face of a prescribed curvature. A semiconductor substrate 11 is placed on the main plane 12a of the specimen support tool 12; a peripheral part of the semiconductor substrate 11 is fixed to a specimen stage 13 by using a specimen-fixing spring 14. In this state, a thin film is deposited on the semiconductor substrate 11; the semiconductor substrate 11 is detached from the specimen support tool 12; a warpage generated on the semiconductor substrate 11 is removed by a restoring force of the semiconductor substrate 11 and by the tension of the formed thin film; the flat substrate is obtained. Due to this set-up, the tension of the thin film is relaxed; the low-stress thin film can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21502187A JPS6459809A (en) | 1987-08-31 | 1987-08-31 | Formation of low-stress thin film and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21502187A JPS6459809A (en) | 1987-08-31 | 1987-08-31 | Formation of low-stress thin film and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459809A true JPS6459809A (en) | 1989-03-07 |
Family
ID=16665422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21502187A Pending JPS6459809A (en) | 1987-08-31 | 1987-08-31 | Formation of low-stress thin film and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459809A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01137638A (en) * | 1987-11-24 | 1989-05-30 | Canon Inc | Thin film forming apparatus |
US6884718B2 (en) * | 2003-03-18 | 2005-04-26 | Micron Technology, Inc. | Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby |
JP2015098411A (en) * | 2013-11-19 | 2015-05-28 | 古河機械金属株式会社 | Method and apparatus for manufacturing nitride semiconductor substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49104571A (en) * | 1973-02-07 | 1974-10-03 | ||
JPS58182822A (en) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | Removing apparatus for internal stress in thin film |
JPS62274618A (en) * | 1986-05-22 | 1987-11-28 | Mitsubishi Electric Corp | Epitaxial crystal growth |
-
1987
- 1987-08-31 JP JP21502187A patent/JPS6459809A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49104571A (en) * | 1973-02-07 | 1974-10-03 | ||
JPS58182822A (en) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | Removing apparatus for internal stress in thin film |
JPS62274618A (en) * | 1986-05-22 | 1987-11-28 | Mitsubishi Electric Corp | Epitaxial crystal growth |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01137638A (en) * | 1987-11-24 | 1989-05-30 | Canon Inc | Thin film forming apparatus |
US6884718B2 (en) * | 2003-03-18 | 2005-04-26 | Micron Technology, Inc. | Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby |
US7358554B2 (en) | 2003-03-18 | 2008-04-15 | Micron Technology, Inc. | Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby |
JP2015098411A (en) * | 2013-11-19 | 2015-05-28 | 古河機械金属株式会社 | Method and apparatus for manufacturing nitride semiconductor substrate |
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