JPS6459807A - Material for thin-film transistor - Google Patents
Material for thin-film transistorInfo
- Publication number
- JPS6459807A JPS6459807A JP21708587A JP21708587A JPS6459807A JP S6459807 A JPS6459807 A JP S6459807A JP 21708587 A JP21708587 A JP 21708587A JP 21708587 A JP21708587 A JP 21708587A JP S6459807 A JPS6459807 A JP S6459807A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- film
- thin
- film transistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21708587A JPS6459807A (en) | 1987-08-29 | 1987-08-29 | Material for thin-film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21708587A JPS6459807A (en) | 1987-08-29 | 1987-08-29 | Material for thin-film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459807A true JPS6459807A (en) | 1989-03-07 |
Family
ID=16698594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21708587A Pending JPS6459807A (en) | 1987-08-29 | 1987-08-29 | Material for thin-film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459807A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222959A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 薄膜半導体装置、多結晶半導体薄膜製造方法及び製造装置 |
JP2008199041A (ja) * | 2008-03-14 | 2008-08-28 | Hitachi Ltd | 薄膜半導体装置及び薄膜半導体装置を用いた画像表示装置 |
JP2008199042A (ja) * | 2008-03-14 | 2008-08-28 | Hitachi Ltd | 薄膜半導体装置を用いた画像表示装置の製造方法 |
US8338830B2 (en) | 2002-07-09 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
WO2013054505A1 (ja) * | 2011-10-12 | 2013-04-18 | パナソニック株式会社 | 薄膜トランジスタ装置 |
-
1987
- 1987-08-29 JP JP21708587A patent/JPS6459807A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222959A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 薄膜半導体装置、多結晶半導体薄膜製造方法及び製造装置 |
US8338830B2 (en) | 2002-07-09 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP2008199041A (ja) * | 2008-03-14 | 2008-08-28 | Hitachi Ltd | 薄膜半導体装置及び薄膜半導体装置を用いた画像表示装置 |
JP2008199042A (ja) * | 2008-03-14 | 2008-08-28 | Hitachi Ltd | 薄膜半導体装置を用いた画像表示装置の製造方法 |
WO2013054505A1 (ja) * | 2011-10-12 | 2013-04-18 | パナソニック株式会社 | 薄膜トランジスタ装置 |
US8860037B2 (en) | 2011-10-12 | 2014-10-14 | Panasonic Corporation | Thin-film transistor device |
JPWO2013054505A1 (ja) * | 2011-10-12 | 2015-03-30 | パナソニック株式会社 | 薄膜トランジスタ装置 |
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