JPS6454743A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6454743A
JPS6454743A JP62212069A JP21206987A JPS6454743A JP S6454743 A JPS6454743 A JP S6454743A JP 62212069 A JP62212069 A JP 62212069A JP 21206987 A JP21206987 A JP 21206987A JP S6454743 A JPS6454743 A JP S6454743A
Authority
JP
Japan
Prior art keywords
outer lead
electrode
semiconductor device
ultrasonic waves
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62212069A
Other languages
Japanese (ja)
Inventor
Isamu Kitahiro
Shuji Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62212069A priority Critical patent/JPS6454743A/en
Publication of JPS6454743A publication Critical patent/JPS6454743A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/79—Apparatus for Tape Automated Bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To connect an electrode and an outer lead firmly without positional displacement by applying ultrasonic waves from a lower section and pressure from an upper section when the electrode and the outer lead are connected. CONSTITUTION:A semiconductor device 3 is sucked under a vacuum to a table 5. The nose of an outer lead 2 in a film carrier 1 is positioned to a bump electrode 4, and pressed by a bonding tool 8, and the semiconductor device 3 is heated from the tool 8 or the table 5. An ultrasonic vibration section 7 is oscillated and made to reach to a joining section, thus promoting joining. A temperature required for forming a junction can be lowered by applying ultrasonic waves. Since ultrasonic waves are not applied to the bonding tool 8, a substrate is not cracked to a conchoidal shape even when an Au wire is cemented onto an extremely brittle single crystal such as GaAs. According to the constitution, the outer lead and the electrode can be joined with high reliability, and the range of the selection of materials is widened by the lowering of the temperature needed for shaping the junction.
JP62212069A 1987-08-26 1987-08-26 Manufacture of semiconductor device Pending JPS6454743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62212069A JPS6454743A (en) 1987-08-26 1987-08-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62212069A JPS6454743A (en) 1987-08-26 1987-08-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6454743A true JPS6454743A (en) 1989-03-02

Family

ID=16616349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62212069A Pending JPS6454743A (en) 1987-08-26 1987-08-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6454743A (en)

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