JPS6453413A - Formation of impurity diffusion layer - Google Patents
Formation of impurity diffusion layerInfo
- Publication number
- JPS6453413A JPS6453413A JP62209147A JP20914787A JPS6453413A JP S6453413 A JPS6453413 A JP S6453413A JP 62209147 A JP62209147 A JP 62209147A JP 20914787 A JP20914787 A JP 20914787A JP S6453413 A JPS6453413 A JP S6453413A
- Authority
- JP
- Japan
- Prior art keywords
- impurity diffusion
- teos
- diffusion layer
- wall
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title abstract 8
- 239000012535 impurity Substances 0.000 title abstract 6
- 230000015572 biosynthetic process Effects 0.000 title 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 5
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000007790 solid phase Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052724 xenon Inorganic materials 0.000 abstract 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To uniformly form a very shallow high concentration impurity diffusion layer on the inner wall of a groove by a method wherein, after a CVD film which is doped by the use of an organic compound impurity diffusion source such as tetraethoxysilane/trimethyl phosphate and the like, has been uniformly applied to the inner wall surface of a groove, impurities are subjected to solid-phase diffusion from the impurity diffusion source using an arc lamp. CONSTITUTION:After an HTO film 2, to be used for prevention of silicon wafer diffusion and having the inner wall part 1 of very narrow and deep trench of 1.5mum in width and 15mum in depth, has been coated, it is placed in a vacuum furnace. Then, tetraethoxysilane (TEOS) and trimethyl phosphate (TMPO) are introduced into the vacuum furnace, and a phosphorus-added glass (TEOS PSG) film 3 is formed. Then, when light 4 an xenon arc lamp is projected, solid-phase diffusion is generated from the TEOS PSG 3, a very shallow and high concentration impurity diffusion layer 5 of surface concentration of 5X10<19>cm<-3>, junction depth of 0.13mum, can be formed uniformly on the side face and the bottom part of the inner wall part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62209147A JPS6453413A (en) | 1987-08-25 | 1987-08-25 | Formation of impurity diffusion layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62209147A JPS6453413A (en) | 1987-08-25 | 1987-08-25 | Formation of impurity diffusion layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6453413A true JPS6453413A (en) | 1989-03-01 |
Family
ID=16568087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62209147A Pending JPS6453413A (en) | 1987-08-25 | 1987-08-25 | Formation of impurity diffusion layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6453413A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03214725A (en) * | 1990-01-19 | 1991-09-19 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
| JPH04245424A (en) * | 1991-01-30 | 1992-09-02 | Nippon Precision Circuits Kk | Manufacture of semiconductor device |
| JP2005197638A (en) * | 2003-12-30 | 2005-07-21 | Hynix Semiconductor Inc | High frequency semiconductor device and its manufacturing method |
-
1987
- 1987-08-25 JP JP62209147A patent/JPS6453413A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03214725A (en) * | 1990-01-19 | 1991-09-19 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
| JPH04245424A (en) * | 1991-01-30 | 1992-09-02 | Nippon Precision Circuits Kk | Manufacture of semiconductor device |
| JP2005197638A (en) * | 2003-12-30 | 2005-07-21 | Hynix Semiconductor Inc | High frequency semiconductor device and its manufacturing method |
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