JPS6452700A - Semi-electrical insulating gaas single crystal with impurity concentration controlled and production thereof - Google Patents
Semi-electrical insulating gaas single crystal with impurity concentration controlled and production thereofInfo
- Publication number
- JPS6452700A JPS6452700A JP63088295A JP8829588A JPS6452700A JP S6452700 A JPS6452700 A JP S6452700A JP 63088295 A JP63088295 A JP 63088295A JP 8829588 A JP8829588 A JP 8829588A JP S6452700 A JPS6452700 A JP S6452700A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gaas single
- semi
- production
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63088295A JPS6452700A (en) | 1987-05-08 | 1988-04-12 | Semi-electrical insulating gaas single crystal with impurity concentration controlled and production thereof |
DE3815575A DE3815575A1 (de) | 1987-05-08 | 1988-05-06 | Halbisolierender gaas-einkristall mit gesteuerter konzentration an verunreinigungen und verfahren zu seiner herstellung |
GB8810936A GB2205824B (en) | 1987-05-08 | 1988-05-09 | Semi-insulating gaas single crystal and method for its preparation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11201387 | 1987-05-08 | ||
JP63088295A JPS6452700A (en) | 1987-05-08 | 1988-04-12 | Semi-electrical insulating gaas single crystal with impurity concentration controlled and production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6452700A true JPS6452700A (en) | 1989-02-28 |
Family
ID=26429698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63088295A Pending JPS6452700A (en) | 1987-05-08 | 1988-04-12 | Semi-electrical insulating gaas single crystal with impurity concentration controlled and production thereof |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS6452700A (ja) |
DE (1) | DE3815575A1 (ja) |
GB (1) | GB2205824B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6479087A (en) * | 1987-09-21 | 1989-03-24 | Hitachi Cable | Gallium arsenide single crystal having low dislocation density and its production |
CN102732951A (zh) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | 一种用于液相外延用富镓的砷化镓熔体凝固的方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63201097A (ja) * | 1987-02-13 | 1988-08-19 | Sumitomo Electric Ind Ltd | 半絶縁性ガリウム砒素単結晶 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1300235A (en) * | 1969-12-31 | 1972-12-20 | Sumitomo Electric Industries | Preparation and purification of semiconducting gallium compounds |
JPS5141954A (en) * | 1974-10-07 | 1976-04-08 | Mitsubishi Electric Corp | 335 zokukagobutsuhandotaino ketsushoseichohoho |
-
1988
- 1988-04-12 JP JP63088295A patent/JPS6452700A/ja active Pending
- 1988-05-06 DE DE3815575A patent/DE3815575A1/de active Granted
- 1988-05-09 GB GB8810936A patent/GB2205824B/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63201097A (ja) * | 1987-02-13 | 1988-08-19 | Sumitomo Electric Ind Ltd | 半絶縁性ガリウム砒素単結晶 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6479087A (en) * | 1987-09-21 | 1989-03-24 | Hitachi Cable | Gallium arsenide single crystal having low dislocation density and its production |
CN102732951A (zh) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | 一种用于液相外延用富镓的砷化镓熔体凝固的方法 |
Also Published As
Publication number | Publication date |
---|---|
DE3815575A1 (de) | 1988-12-15 |
GB8810936D0 (en) | 1988-06-15 |
GB2205824B (en) | 1991-06-05 |
GB2205824A (en) | 1988-12-21 |
DE3815575C2 (ja) | 1993-09-02 |
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