JPS6450546A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6450546A JPS6450546A JP62208634A JP20863487A JPS6450546A JP S6450546 A JPS6450546 A JP S6450546A JP 62208634 A JP62208634 A JP 62208634A JP 20863487 A JP20863487 A JP 20863487A JP S6450546 A JPS6450546 A JP S6450546A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- insulating film
- thin insulating
- superconducting material
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable the contact resistance always to be reproduced as a low one, by interposing, in the connecting section of the wiring of a superconducting material and the wiring of a normally conductive material, a thin insulating film between both wirings, thereby suppressing the abnormal diffusion of the wiring materials due to annealing. CONSTITUTION:In the connecting section by a wiring 1 of a superconducting material and a wiring 4 by a normally conductive material, a thin insulating film 5 is interposed between both wirings 1, 4. Said thin insulating film 5 is comprised of, for instance, SiOx, SiNy or a film of more than two layers which are made of different kinds of insulating materials. For instance, on a Si substrate on which an oxide film having a thickness of 1mum was formed, a wiring 1 by a superconducting material of the Y-Ba-Cu-O system is vapor-deposited to about 2mum, and after forming a pattern, it is annealed in air for about 8 hours at 650 deg.C. Then, after sputter-forming a thin insulating film 5 to a thickness of 20-50Angstrom , an aluminum wiring 4 is formed, and this is annealed in dried nitrogen for one hour at 500 deg.C for annealing aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208634A JPS6450546A (en) | 1987-08-21 | 1987-08-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208634A JPS6450546A (en) | 1987-08-21 | 1987-08-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450546A true JPS6450546A (en) | 1989-02-27 |
Family
ID=16559480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62208634A Pending JPS6450546A (en) | 1987-08-21 | 1987-08-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450546A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0825656A2 (en) * | 1996-08-13 | 1998-02-25 | Sumitomo Electric Industries, Limited | Superconducting film structure comprising oxide superconductor layer and protective layer and method for preparing the same |
-
1987
- 1987-08-21 JP JP62208634A patent/JPS6450546A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0825656A2 (en) * | 1996-08-13 | 1998-02-25 | Sumitomo Electric Industries, Limited | Superconducting film structure comprising oxide superconductor layer and protective layer and method for preparing the same |
| EP0825656A3 (en) * | 1996-08-13 | 1999-05-19 | Sumitomo Electric Industries, Limited | Superconducting film structure comprising oxide superconductor layer and protective layer and method for preparing the same |
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