JPS6450547A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable the contact resistance of both wirings by a method wherein a wiring made of a superconducting material mainly containing copper and a wiring made of a normally conductive material intersect, and the part of the normally conductive material wiring of the section where both wirings are connected is composed of an aluminum material containing copper, thereby suppressing the mutual abnormal diffusion of the wiring materials. CONSTITUTION:A wiring 1 made of a superconducting material mainly containing copper and a wiring 4 made of a normally conductive material are coexisting, those two wiring materials 1, 4 are connected, and the part of the normally conductive material wiring 4 at least in the section where both wirings are intersecting is composed of an aluminium material. For instance, on a Si substrate on which an oxide film having a thickness of 1mum was formed, a superconducting material 1 of the Y-Ba-Cu-O system is vapor-deposited to about 2mum, and after forming a pattern, it is annealed in air for about 8 hours at 650 deg.C. Then, a silicon oxide film 2 of 0.5mum is formed by a CVD method and a contact hole 3 is opened, an aluminium wiring 4 having copper added by 1-5wt.% thereto is formed, and this is annealed in dried nitrogen for one hour at 500 deg.C for annealing aluminium.