JPS6450478A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS6450478A
JPS6450478A JP62207513A JP20751387A JPS6450478A JP S6450478 A JPS6450478 A JP S6450478A JP 62207513 A JP62207513 A JP 62207513A JP 20751387 A JP20751387 A JP 20751387A JP S6450478 A JPS6450478 A JP S6450478A
Authority
JP
Japan
Prior art keywords
photodetector
substrate
except
type semiconductor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62207513A
Other languages
Japanese (ja)
Inventor
Kazuhide Shima
Hidetomo Naka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOUDENSHI KOGYO KENKYUSHO KK
Kodenshi Corp
Original Assignee
KOUDENSHI KOGYO KENKYUSHO KK
Kodenshi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOUDENSHI KOGYO KENKYUSHO KK, Kodenshi Corp filed Critical KOUDENSHI KOGYO KENKYUSHO KK
Priority to JP62207513A priority Critical patent/JPS6450478A/en
Publication of JPS6450478A publication Critical patent/JPS6450478A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To effectively shield light and to prevent an S/N ratio from deteriorating, by depositing a metal material layer through an oxide film on a reference face except a photodetector part in one conductivity type semiconductor substrate. CONSTITUTION:An oxide film 3 is provided on one conductivity type semiconductor substrate 2, the film 3 at a photodetector forming position on the reference face 2a of the substrate 2 is removed, a reverse conductivity type semiconductor layer 4 is diffused to form a photodetector part 5 on the exposed reference face of the substrate 2. In this case, a metal material layer 7 is deposited through the film 3 on the face 2a except the photodetector part 5 on the substrate 2, a light incidence is completely prevented on the part 6 except the photodetector to suppress a photoelectric effect on the part 6. Thus, it can prevent S/N ratio from deteriorating due to external scattered light.
JP62207513A 1987-08-20 1987-08-20 Semiconductor photodetector Pending JPS6450478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207513A JPS6450478A (en) 1987-08-20 1987-08-20 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207513A JPS6450478A (en) 1987-08-20 1987-08-20 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS6450478A true JPS6450478A (en) 1989-02-27

Family

ID=16540964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207513A Pending JPS6450478A (en) 1987-08-20 1987-08-20 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS6450478A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152163A (en) * 1985-12-25 1987-07-07 Res Dev Corp Of Japan Planar type photoelectric conversion device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152163A (en) * 1985-12-25 1987-07-07 Res Dev Corp Of Japan Planar type photoelectric conversion device

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