JPS6449283A - Planar-type heterojunction semiconductor photodetector - Google Patents
Planar-type heterojunction semiconductor photodetectorInfo
- Publication number
- JPS6449283A JPS6449283A JP62206113A JP20611387A JPS6449283A JP S6449283 A JPS6449283 A JP S6449283A JP 62206113 A JP62206113 A JP 62206113A JP 20611387 A JP20611387 A JP 20611387A JP S6449283 A JPS6449283 A JP S6449283A
- Authority
- JP
- Japan
- Prior art keywords
- guard ring
- impurity
- layer
- curvature
- forbidden
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To form a guard ring whose curvature is relaxed by a method wherein a forbidden-band width in an avalanche multiplication layer is increased at an arbitrary grade as the layer becomes more distant from a light-absorbing layer so that an impurity can be diffused deeply. CONSTITUTION:A guard ring 5' completely covers the curvature at an edge part of a stepped-shape p<+>-n junction, and relaxes the curvature at an edge part of the guard ring 5' to a certain extent; a break-down voltage of the guard ring 5' itself is increased. Therefore, a forbidden-band width in an avalanche multiplication layer 4 is increased at an arbitrary grade as the layer becomes more distant from a light-absorbing layer 3. That is, when a p-type impurity is diffused into an n-type conductive region or an ion is implanted, the coupling energy between atoms constituting a semiconductor becomes strong as the forbidden-band width in the n-type conductive region becomes large. Accordingly, the probability to substitute the atoms constituting the semiconductor for the impurity is lowered; the impurity is diffused deeply; the guard ring 5' whose curvature has been relaxed can be formed.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206113A JP2680817B2 (en) | 1987-08-19 | 1987-08-19 | Method for manufacturing planar heterojunction semiconductor photodetector |
| DE3855924T DE3855924T2 (en) | 1987-08-19 | 1988-08-18 | Planar avalanche photodiode with heterostructure |
| EP88113417A EP0304048B1 (en) | 1987-08-19 | 1988-08-18 | A planar type heterostructure avalanche photodiode |
| US07/234,059 US4974061A (en) | 1987-08-19 | 1988-08-19 | Planar type heterostructure avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206113A JP2680817B2 (en) | 1987-08-19 | 1987-08-19 | Method for manufacturing planar heterojunction semiconductor photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6449283A true JPS6449283A (en) | 1989-02-23 |
| JP2680817B2 JP2680817B2 (en) | 1997-11-19 |
Family
ID=16518013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62206113A Expired - Lifetime JP2680817B2 (en) | 1987-08-19 | 1987-08-19 | Method for manufacturing planar heterojunction semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2680817B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616820A (en) * | 1984-06-21 | 1986-01-13 | Matsushita Electric Ind Co Ltd | Manufacture of compound semiconductor device |
| JPS61267375A (en) * | 1985-05-21 | 1986-11-26 | Nec Corp | Planar type hetero junction semiconductor photodetector |
-
1987
- 1987-08-19 JP JP62206113A patent/JP2680817B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS616820A (en) * | 1984-06-21 | 1986-01-13 | Matsushita Electric Ind Co Ltd | Manufacture of compound semiconductor device |
| JPS61267375A (en) * | 1985-05-21 | 1986-11-26 | Nec Corp | Planar type hetero junction semiconductor photodetector |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2680817B2 (en) | 1997-11-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070801 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080801 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080801 Year of fee payment: 11 |