JPS6448416A - Transfer method of photoelectron image - Google Patents

Transfer method of photoelectron image

Info

Publication number
JPS6448416A
JPS6448416A JP20540387A JP20540387A JPS6448416A JP S6448416 A JPS6448416 A JP S6448416A JP 20540387 A JP20540387 A JP 20540387A JP 20540387 A JP20540387 A JP 20540387A JP S6448416 A JPS6448416 A JP S6448416A
Authority
JP
Japan
Prior art keywords
photoelectron
film
emission
photoelectrons
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20540387A
Other languages
Japanese (ja)
Inventor
Hiroshi Yasuda
Juichi Sakamoto
Akio Yamada
Jinko Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20540387A priority Critical patent/JPS6448416A/en
Publication of JPS6448416A publication Critical patent/JPS6448416A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To emit photoelectrons stably by using a mask in which a photoelectron emission region forms a pattern by the photoelectron emission region, in which a first conductive film, a nonconductive film and a second conductive film are laminated in the order, and a photoelectron non-emission region, in which a photoelectron interrupting film is shaped at a specific position. CONSTITUTION:With a mask 7, a first conductive film 7b is formed onto a transparent substrate 7a, a nonconductive film 7c is shaped onto the surface of the film 7b, photoelectron interrupting films 7d patterned in conformity with photoelectron non-emission regions are formed onto the film 7c, a second conductive film 7e is shaped onto the whole surface on the films 7d, the second conductive film 7e side is used as the surface, regions in which there are no photoelectron interrupting film 7d are employed as patterned photoelectron emission regions. The mask 7 increases the energy of photoelectrons at the time of reaching the emission of photoelectrons when photoelectrons generated through optical pumping are accelerated by bias voltage. Consequently, the second conductive film as the surface of the photoelectron emission region does not inhibit the emission of photoelectrons even when it is contaminated minutely. Accordingly, the emission of photoelectrons at the time of exposure is stabilized, and exposure can be performed stably.
JP20540387A 1987-08-19 1987-08-19 Transfer method of photoelectron image Pending JPS6448416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20540387A JPS6448416A (en) 1987-08-19 1987-08-19 Transfer method of photoelectron image

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20540387A JPS6448416A (en) 1987-08-19 1987-08-19 Transfer method of photoelectron image

Publications (1)

Publication Number Publication Date
JPS6448416A true JPS6448416A (en) 1989-02-22

Family

ID=16506258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20540387A Pending JPS6448416A (en) 1987-08-19 1987-08-19 Transfer method of photoelectron image

Country Status (1)

Country Link
JP (1) JPS6448416A (en)

Similar Documents

Publication Publication Date Title
JPS5711351A (en) Electrostatic copying machine
DK0528322T3 (en) A shaped field radiation electron source using a diamond coating, as well as a method for making it
DE69532690D1 (en) Method for producing an electron-emitting device and an electron source and an image-forming device with such electron-emitting devices
ATE179276T1 (en) METHOD OF PRODUCING AN ELECTRON EMITTING DEVICE
JPS6448416A (en) Transfer method of photoelectron image
JPS52120782A (en) Manufacture of semiconductor device
JPS53110379A (en) Optical filter and its manufacture
JPS56156840A (en) Electrostatic light recording method
JPS5713762A (en) Light energized semiconductor device
JPS5421272A (en) Metal photo mask
JPS5492527A (en) Manufacture of metal foil having apertures
JPS5742043A (en) Photosensitive material
JPS54107289A (en) Semiconductor light emitting element
JPS56138848A (en) Photoelectric surface mask
JPS57192088A (en) Manufacture of light emitting diode
JPS5550627A (en) Mask for lithography
JPS6417064A (en) Photosensitive body
JPS55158635A (en) Mask
JPS5360177A (en) Photo mask
JPS5762010A (en) Color separation filter for image pickup tube
JPS5558531A (en) Fine processing
JPS57122438A (en) Photomask for projection exposure
JPS5572086A (en) Production of semiconductor device
JPS5254388A (en) Light emitting diode
JPS5313828A (en) Pick up tube