JPS6448416A - Transfer method of photoelectron image - Google Patents
Transfer method of photoelectron imageInfo
- Publication number
- JPS6448416A JPS6448416A JP20540387A JP20540387A JPS6448416A JP S6448416 A JPS6448416 A JP S6448416A JP 20540387 A JP20540387 A JP 20540387A JP 20540387 A JP20540387 A JP 20540387A JP S6448416 A JPS6448416 A JP S6448416A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectron
- film
- emission
- photoelectrons
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To emit photoelectrons stably by using a mask in which a photoelectron emission region forms a pattern by the photoelectron emission region, in which a first conductive film, a nonconductive film and a second conductive film are laminated in the order, and a photoelectron non-emission region, in which a photoelectron interrupting film is shaped at a specific position. CONSTITUTION:With a mask 7, a first conductive film 7b is formed onto a transparent substrate 7a, a nonconductive film 7c is shaped onto the surface of the film 7b, photoelectron interrupting films 7d patterned in conformity with photoelectron non-emission regions are formed onto the film 7c, a second conductive film 7e is shaped onto the whole surface on the films 7d, the second conductive film 7e side is used as the surface, regions in which there are no photoelectron interrupting film 7d are employed as patterned photoelectron emission regions. The mask 7 increases the energy of photoelectrons at the time of reaching the emission of photoelectrons when photoelectrons generated through optical pumping are accelerated by bias voltage. Consequently, the second conductive film as the surface of the photoelectron emission region does not inhibit the emission of photoelectrons even when it is contaminated minutely. Accordingly, the emission of photoelectrons at the time of exposure is stabilized, and exposure can be performed stably.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20540387A JPS6448416A (en) | 1987-08-19 | 1987-08-19 | Transfer method of photoelectron image |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20540387A JPS6448416A (en) | 1987-08-19 | 1987-08-19 | Transfer method of photoelectron image |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6448416A true JPS6448416A (en) | 1989-02-22 |
Family
ID=16506258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20540387A Pending JPS6448416A (en) | 1987-08-19 | 1987-08-19 | Transfer method of photoelectron image |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6448416A (en) |
-
1987
- 1987-08-19 JP JP20540387A patent/JPS6448416A/en active Pending
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