JPS644736A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS644736A
JPS644736A JP16063087A JP16063087A JPS644736A JP S644736 A JPS644736 A JP S644736A JP 16063087 A JP16063087 A JP 16063087A JP 16063087 A JP16063087 A JP 16063087A JP S644736 A JPS644736 A JP S644736A
Authority
JP
Japan
Prior art keywords
film
photofading
photoresist film
ruggedness
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16063087A
Other languages
Japanese (ja)
Inventor
Shinichi Fukuzawa
Shigeyuki Sugito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16063087A priority Critical patent/JPS644736A/en
Publication of JPS644736A publication Critical patent/JPS644736A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a uniform photofading effect in an exposed pattern part by forming a low-molecular org. film having high flowability onto a positive type photoresist film formed with ruggedness and subjecting the film to a heat treatment to flatten the ruggedness of the positive type photoresist film, then forming a photofading film and exposing the film. CONSTITUTION:The photoresist film 12 is formed on a substrate 10 formed with ruggedness and in succession, the low-molecular org. film 24 which allows the transmission of the light having the exposing wavelength of the photoresist film 12 is formed on the photoresist film 12 to flatten the film. After the film is flattened, the material having the photofading effect to the light having the exposing wavelength of the photoresist film 12 is formed thereon to form the photofading film 22. The photoresist film 12 is then exposed and after the photofading material and the low-molecular org. film 24 are removed, the photoresist film 12 is developed. The photofading effect when the light is projected is thereby uniformized.
JP16063087A 1987-06-26 1987-06-26 Formation of pattern Pending JPS644736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16063087A JPS644736A (en) 1987-06-26 1987-06-26 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16063087A JPS644736A (en) 1987-06-26 1987-06-26 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS644736A true JPS644736A (en) 1989-01-09

Family

ID=15719083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16063087A Pending JPS644736A (en) 1987-06-26 1987-06-26 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS644736A (en)

Similar Documents

Publication Publication Date Title
JPS542720A (en) Forming method of photopolymerized image
TW363146B (en) An anti-reflective layer and a method of forming a photoresist pattern
JPS5421726A (en) Electrostatic printing method and device therefor
JPS644736A (en) Formation of pattern
JPS5226171A (en) Mask creation method
JPS5461931A (en) Forming method of photo resist patterns
JPS649618A (en) Pattern formation
JPS5557233A (en) Method for manufacturing fluorescent screen
JPS5541728A (en) Pattern formation by thick film paste
JPS56144539A (en) Formation of fine pattern
JPS55128832A (en) Method of making minute pattern
JPS5580323A (en) Pattern forming method for photoresist-film
JPS5277671A (en) Method and equipment of masking
JPS53147531A (en) Forming method for thin film pattern
JPS5269270A (en) Coating method of photoresist
JPS5255867A (en) Exposure method
JPS5610930A (en) Manufacture of semiconductor device
JPS5632143A (en) Manufacture of photomask
JPS5578531A (en) Semiconductor substrate
JPS51111056A (en) Diffused layer forming method
JPS55127022A (en) Forming of plastic insulating film
JPS6444935A (en) Pattern forming method
JPS5218320A (en) Image forming method
JPS56102582A (en) Etching process of thin film
JPS55124230A (en) Forming method of pattern