JPS6446968A - Polycrystalline silicon thin film transistor and manufacture thereof - Google Patents
Polycrystalline silicon thin film transistor and manufacture thereofInfo
- Publication number
- JPS6446968A JPS6446968A JP20318587A JP20318587A JPS6446968A JP S6446968 A JPS6446968 A JP S6446968A JP 20318587 A JP20318587 A JP 20318587A JP 20318587 A JP20318587 A JP 20318587A JP S6446968 A JPS6446968 A JP S6446968A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- polycrystalline silicon
- silicon thin
- film transistor
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a polycrystalline silicon thin film transistor with high mutual conductance, by making the density of captured electrons existing in the crystal grain boundary in a channel region equal to or smaller than a specific value. CONSTITUTION:By using a polycrystalline silicon thin film formed by fusing recrystallizing method such as a laser recrystallizing method, the captured electron density in the crystal grain boundary in the channel region of a polycrystalline silicon thin film transistor is decreased to a value less than or equal to 8X10<11>cm<-2>. Therefore, in the state where the electric field intensity in the vertical direction to a gate oxide film and a semiconductor boundary surface is less than or equal to 2X10<5>V/cm, the same transition to the carrier conveying mechanism as the case of a single crystal is enabled. Thereby, even in the case of polycrystalline state, the field-effect mobility of the nearly same degree as single crystal is realized, and a polycrystalline silicon thin film transistor with high mutual conductance can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20318587A JPS6446968A (en) | 1987-08-17 | 1987-08-17 | Polycrystalline silicon thin film transistor and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20318587A JPS6446968A (en) | 1987-08-17 | 1987-08-17 | Polycrystalline silicon thin film transistor and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6446968A true JPS6446968A (en) | 1989-02-21 |
Family
ID=16469867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20318587A Pending JPS6446968A (en) | 1987-08-17 | 1987-08-17 | Polycrystalline silicon thin film transistor and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6446968A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05218430A (en) * | 1992-02-07 | 1993-08-27 | G T C:Kk | Polycrystal silicon film transistor and manufacturing method thereof |
WO2000001016A1 (en) * | 1998-06-30 | 2000-01-06 | Matsushita Electric Industrial Co., Ltd. | Thin-film transistor and method of manufacture thereof |
-
1987
- 1987-08-17 JP JP20318587A patent/JPS6446968A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05218430A (en) * | 1992-02-07 | 1993-08-27 | G T C:Kk | Polycrystal silicon film transistor and manufacturing method thereof |
WO2000001016A1 (en) * | 1998-06-30 | 2000-01-06 | Matsushita Electric Industrial Co., Ltd. | Thin-film transistor and method of manufacture thereof |
US6506669B1 (en) | 1998-06-30 | 2003-01-14 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a thin film transistor |
US6534353B1 (en) | 1998-06-30 | 2003-03-18 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a thin-film transistor |
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