JPS6445117A - Impurity introduction into semiconductor - Google Patents

Impurity introduction into semiconductor

Info

Publication number
JPS6445117A
JPS6445117A JP20222287A JP20222287A JPS6445117A JP S6445117 A JPS6445117 A JP S6445117A JP 20222287 A JP20222287 A JP 20222287A JP 20222287 A JP20222287 A JP 20222287A JP S6445117 A JPS6445117 A JP S6445117A
Authority
JP
Japan
Prior art keywords
semiconductor
impurities
atmosphere
plasma
helium gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20222287A
Other languages
Japanese (ja)
Inventor
Yasukazu Seki
Noritada Sato
Osamu Ishiwatari
Kazuo Matsuzaki
Yoshiaki Ito
Sueshige Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP20222287A priority Critical patent/JPS6445117A/en
Publication of JPS6445117A publication Critical patent/JPS6445117A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to introduce impurities into a semiconductor at a high activity degree in one step, by using a helium gas atmosphere as an atmosphere for yielding plasma. CONSTITUTION:A semiconductor wafer 10 is kept at a specified temperature of 400 deg.C or less in a tightly closed container 1 provided with a pair of discharge electrodes 2. The container is filled with helium gas atmosphere, which includes specified impurities that is introduced into the semiconductor 10. Under the state the semiconductor 10 is kept at an electrode potential, plasma is yielded in the atmosphere by the discharge of the electrode pair 2. The atmosphere, in which the plasma is yielded, is made to be the helium gas atmosphere. Thus the activity degree of the impurities, which are introduced into the semiconductor, is improved. Thus the practical semiconductor layer can be utilized under the state the impurities are introduced even if the activating treatment of the impurities is not performed otherwise.
JP20222287A 1987-08-13 1987-08-13 Impurity introduction into semiconductor Pending JPS6445117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20222287A JPS6445117A (en) 1987-08-13 1987-08-13 Impurity introduction into semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20222287A JPS6445117A (en) 1987-08-13 1987-08-13 Impurity introduction into semiconductor

Publications (1)

Publication Number Publication Date
JPS6445117A true JPS6445117A (en) 1989-02-17

Family

ID=16453986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20222287A Pending JPS6445117A (en) 1987-08-13 1987-08-13 Impurity introduction into semiconductor

Country Status (1)

Country Link
JP (1) JPS6445117A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218728A (en) * 1983-05-26 1984-12-10 Fuji Electric Corp Res & Dev Ltd Impurity introduction into semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218728A (en) * 1983-05-26 1984-12-10 Fuji Electric Corp Res & Dev Ltd Impurity introduction into semiconductor substrate

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