JPS6445117A - Impurity introduction into semiconductor - Google Patents
Impurity introduction into semiconductorInfo
- Publication number
- JPS6445117A JPS6445117A JP20222287A JP20222287A JPS6445117A JP S6445117 A JPS6445117 A JP S6445117A JP 20222287 A JP20222287 A JP 20222287A JP 20222287 A JP20222287 A JP 20222287A JP S6445117 A JPS6445117 A JP S6445117A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- impurities
- atmosphere
- plasma
- helium gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make it possible to introduce impurities into a semiconductor at a high activity degree in one step, by using a helium gas atmosphere as an atmosphere for yielding plasma. CONSTITUTION:A semiconductor wafer 10 is kept at a specified temperature of 400 deg.C or less in a tightly closed container 1 provided with a pair of discharge electrodes 2. The container is filled with helium gas atmosphere, which includes specified impurities that is introduced into the semiconductor 10. Under the state the semiconductor 10 is kept at an electrode potential, plasma is yielded in the atmosphere by the discharge of the electrode pair 2. The atmosphere, in which the plasma is yielded, is made to be the helium gas atmosphere. Thus the activity degree of the impurities, which are introduced into the semiconductor, is improved. Thus the practical semiconductor layer can be utilized under the state the impurities are introduced even if the activating treatment of the impurities is not performed otherwise.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20222287A JPS6445117A (en) | 1987-08-13 | 1987-08-13 | Impurity introduction into semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20222287A JPS6445117A (en) | 1987-08-13 | 1987-08-13 | Impurity introduction into semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6445117A true JPS6445117A (en) | 1989-02-17 |
Family
ID=16453986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20222287A Pending JPS6445117A (en) | 1987-08-13 | 1987-08-13 | Impurity introduction into semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6445117A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59218728A (en) * | 1983-05-26 | 1984-12-10 | Fuji Electric Corp Res & Dev Ltd | Impurity introduction into semiconductor substrate |
-
1987
- 1987-08-13 JP JP20222287A patent/JPS6445117A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59218728A (en) * | 1983-05-26 | 1984-12-10 | Fuji Electric Corp Res & Dev Ltd | Impurity introduction into semiconductor substrate |
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