JPS644162B2 - - Google Patents
Info
- Publication number
- JPS644162B2 JPS644162B2 JP1944178A JP1944178A JPS644162B2 JP S644162 B2 JPS644162 B2 JP S644162B2 JP 1944178 A JP1944178 A JP 1944178A JP 1944178 A JP1944178 A JP 1944178A JP S644162 B2 JPS644162 B2 JP S644162B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- sio
- film
- manufacturing
- panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- 238000007645 offset printing Methods 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Description
〔産業上の利用分野〕
本発明は主として電界効果型の液晶パネルに用
いるガラス基板の製造方法に関するものである。
〔従来の技術〕
電界効果形液晶表示パネル用セルは、第１図に
示すごとく液晶分子をツイスト配向させ、電界印
加でその分子を電界に対してほぼ平行にならしめ
液晶の光学的変化を生じさせるもので、このセル
の上下に偏光板を合わせることにより表示を可能
ならしめている。この場合、液晶は抵抗が高いた
めに電流はほとんど流れずその結果消費電力も小
さい。また液晶中に流れる電流が少ないために液
晶の劣化がほとんどなくまた透明電極の劣化も抑
えることができ全体的に非常に寿命の長い表示パ
ネルが可能になる。しかし通常の充分に精製され
た液晶中には液晶を入れる容器からまた液晶をセ
ル中に封入する際に不純物の混入がある。更にパ
ネルを長期間駆動していくうち透明電極中の不純
物がイオンとして溶けこんだりする。このために
液晶の抵抗値が低くなり消費電力の増大、液晶の
劣化等の問題が生じて長寿命化、高信頼性を得る
のが困難となつている。
従来上記した問題に対して第２図に示す様な対
策がなされている。この対策とは予めパター形成
した透明電極の表面をスパツタ蒸着法、真空蒸着
法、CVD法等でSiO2膜をオーバーコートして透
明電極中の不純物がイオンとしと溶出するのを防
止したり、或いは不可避的に流れる電流のための
透明電極の劣化を防止したりしている。しかしス
パツタ蒸着法、真空蒸着法、或いはCVD法とい
つたコーテイング処理方法は量産性が悪く、更ま
た熟練した処理工程管理を必要としたり、或いは
装置入手のための莫大な投資を強いられ、パネル
製造工程への投入は困難となつている。
以上の蒸着法の欠点をさけるために次に示すよ
うな改良された技術も提案されている。即ち、特
開昭52−130344号公報には、有機シリコンを溶質
としエタノールを溶媒とする溶液を塗布焼成され
ることが開示されているが、リンの元素を無機酸
の形で前記リンをSiO2に対して１％〜10％添加
されていないものであつて、単に絶縁膜のはが
れ、クラツクの発生防止ができるものである。ま
た単純なSiO2膜ができるものである。
次に特開昭50−131549号公報には珪素の有機溶
液により絶縁膜を形成する際にＰ、Pb、Cdなど
の金属を有機または無機の化合物の形で加える点
は開示されていますが、その量が定められていな
いばかりか、絶縁膜形成の目的が、こすりによる
電極の配向処理の安定化あるいは長寿命化にある
ものである。他には特開昭50−131548号公報に
は、珪素の有機溶液にＰ、Pb、Clなどの有機ま
たは無機化合物を混入することは開示されていま
すが、その量は示されず、混入の目的は、熱処理
温度を下げるものである。
〔発明が解決しようとする問題点〕
従来から公知となつている技術では、液晶セル
基板から液晶組成物中へ溶出する不純物を押えき
れない問題点があつた。また蒸着技術を用いた絶
縁膜形成法ではコストが大幅に上昇し、工業的に
製造することは困難であつた。
本発明は以上の問題点を解決し、液晶セル基板
から液晶組成物中への不純物溶出を完全に押えら
れ、かつ安価に製造できる製造方法を提供しよう
とするものである。
〔問題点を解決するための手段〕
本発明の液晶パネルの製造方法は、透明電極を
上下対向させて形成したガラスセルに液晶組成物
をツイスト配向させて封入し液晶の電気的光学的
特性を利用して表示を行なう液晶表示パネルの製
造方法において、前記セルの上下対向させたセル
基板の表面を、ケイ素のオーガニツクソリユージ
ヨン｛一般式；Si（OR）4、Ｒ；アルキル基｝に、
リンの元素を無機酸の形で前記リンをSiO2に対
して１％〜10％の割合で添加して調合した処理液
を用いて、SiO2＋添加物含有膜でコートし、該
コートした膜厚が500〜3000Åであつて、前記処
理液の塗布方法として、刷毛塗りスピンナー振り
切り法、スプレー吹付け法、浸漬等引き上げ法、
オフセツト印刷法によることを特徴とするもので
ある。
〔実施例〕
以下本発明の詳細を説明する。
ケイ素のオーガニツクソリユージヨンとはその
化学式を一般的にSi（OR）4（Ｒ＝アルキル基）で
示される、オルソアルコキシシランである。
この物質をアルコール、酢酸メチル、酢酸エチ
ル、アセトン、キシレン、塩酸、硫酸、酢酸、ギ
酢などを溶媒として調合し処理液として、アルカ
り洗浄、酸洗浄、純水洗浄等、洗浄を充分行なつ
たガラス基板に刷毛塗り、スピンナー回転振り切
り法、スプレー吹付け法、浸漬等速引き上げ法、
オフセツト印刷法等のいずれかの方法で塗布し、
150℃〜200℃程度の温度でプレ焼成を施すと若干
強固な膜になる。更に400℃以上の高温で焼成し
て不純物の溶出を防止する効果の高い（以下高質
という）SiO2膜を得る。この処理したガラス基
板で組み立てた液晶表示パネルは従来の処理とほ
ぼ同じレベル或いはそれ以上の品質のものが得ら
れる。また前述した処理方法で得た純粋なSiO2
膜を高質にする為に、前記処理液にリンの元素を
無機酸の形で前記リンを適当な割合で添加して処
理液を調合し、前記諸方法のいずれかの方法を使
つてパネル用ガラス基板に処理液塗布した後、プ
レ焼成、高温焼成して前記物質の添加された
SiO2膜を得る。この処理したガラス基板でパネ
ル用セルを組み立てた液晶表示パネルは純粋な
SiO2膜のオーバーコート処理より寿命の長いパ
ネルが得られる。これはSiO2膜に前記物質を添
加することにより高質の膜が得られたためであ
る。尚添加量の割合はSiO2に対し、１％〜10％
が好ましく、それ以上でも、それ以下でも効果が
うすれる。特に10％を越えれば、逆に前記物質が
液晶組成物中に溶出して配向の乱れを生ずる欠点
がある。１％より少なければ前記物質の添加が少
なすぎて従来の結果に近くなつてしまう。
このように本発明によれば、従来のSiO2コー
テイング方法（例えばスパツタ蒸着法、真空蒸着
法、等々）に比較して、極めせ容易に添加物を加
えることが出来ると共に、添加物の割合も自由に
コントロールすることが可能である。膜厚につい
ては膜の厚い方がよい長寿命を示すが500Å〜
3000Åの範囲が最も良好である。
本発明方法は処理液のガラスの塗布条件を出し
てしまえばプレ焼成、高温焼成を電気炉で施せば
よく、細かな工程管理を必要とせず、また設備と
しては処理液の塗布装置と電気炉或いはベルト炉
があればよく大きな設備投資の必要がなく、また
量産性は従来ある方法と比較にならないほど大き
く、全体的に非常に大きな合理化を可能にした。
次に実施例を記して本発明を具体的に説明す
る。
なお、前述従来のケイ素をオーガニツクソリユ
ージヨンを塗布して焼成ものと、本発明のリンを
添加したものとを特性比較した状態は下表の通り
である。
[Industrial Field of Application] The present invention mainly relates to a method of manufacturing a glass substrate used in a field-effect liquid crystal panel. [Prior art] Field-effect liquid crystal display panel cells twist-align liquid crystal molecules as shown in Figure 1, and apply an electric field to make the molecules nearly parallel to the electric field, causing optical changes in the liquid crystal. Display is made possible by placing polarizing plates above and below this cell. In this case, since the liquid crystal has a high resistance, almost no current flows, resulting in low power consumption. Furthermore, since the current flowing through the liquid crystal is small, there is almost no deterioration of the liquid crystal, and deterioration of the transparent electrodes can also be suppressed, making it possible to create a display panel with a very long life overall. However, impurities may be mixed into ordinary, sufficiently purified liquid crystals from the containers containing the liquid crystals or when the liquid crystals are sealed in cells. Furthermore, as the panel is operated for a long period of time, impurities in the transparent electrode dissolve in the form of ions. For this reason, the resistance value of the liquid crystal decreases, causing problems such as increased power consumption and deterioration of the liquid crystal, making it difficult to achieve long life and high reliability. Conventionally, countermeasures as shown in FIG. 2 have been taken to address the above-mentioned problems. This countermeasure involves overcoating the surface of a transparent electrode that has been patterned in advance with a SiO 2 film using sputter deposition, vacuum deposition, CVD, etc. to prevent impurities in the transparent electrode from eluting as ions. Alternatively, the transparent electrode is prevented from deteriorating due to the unavoidable current flowing therein. However, coating processing methods such as sputter deposition, vacuum evaporation, and CVD are difficult to mass-produce, require skilled process management, or require a huge investment to acquire equipment. Inputting it into the manufacturing process is becoming difficult. In order to avoid the above drawbacks of the vapor deposition method, the following improved techniques have also been proposed. That is, JP-A No. 52-130344 discloses that a solution containing organic silicon as a solute and ethanol as a solvent is applied and fired. It does not contain 1% to 10% of the amount added to 2 , and simply prevents the peeling of the insulating film and the occurrence of cracks. In addition, a simple SiO 2 film can be formed. Next, JP-A-50-131549 discloses that metals such as P, Pb, and Cd are added in the form of organic or inorganic compounds when forming an insulating film using an organic solution of silicon. Not only is the amount not determined, but the purpose of forming the insulating film is to stabilize the electrode alignment process by rubbing or to extend the life of the electrode. In addition, JP-A-50-131548 discloses that organic or inorganic compounds such as P, Pb, and Cl are mixed into an organic solution of silicon, but the amount is not indicated and the purpose of the mixing is is to lower the heat treatment temperature. [Problems to be Solved by the Invention] Conventionally known techniques have had the problem of not being able to suppress impurities eluted from the liquid crystal cell substrate into the liquid crystal composition. Furthermore, the method of forming an insulating film using vapor deposition technology significantly increases the cost, making it difficult to manufacture the film on an industrial scale. The present invention aims to solve the above-mentioned problems and provide a manufacturing method that can completely suppress the elution of impurities from a liquid crystal cell substrate into a liquid crystal composition and can be manufactured at low cost. [Means for Solving the Problems] The method for manufacturing a liquid crystal panel of the present invention is to improve the electrical and optical properties of the liquid crystal by enclosing a liquid crystal composition in a twisted orientation in a glass cell formed by vertically opposing transparent electrodes. In the method of manufacturing a liquid crystal display panel for displaying images, the surfaces of the cell substrates facing each other are coated with organic silicon solution of silicon {general formula: Si(OR) 4 , R: alkyl group},
A SiO 2 + additive-containing film was coated using a treatment solution prepared by adding phosphorus in the form of an inorganic acid at a ratio of 1% to 10% relative to SiO 2 . The film thickness is 500 to 3000 Å, and the method of applying the treatment liquid includes a brush coating spinner shake-off method, a spraying method, a dipping method, etc.
It is characterized by being based on an offset printing method. [Example] The details of the present invention will be explained below. Silicon organic solution is an orthoalkoxysilane whose chemical formula is generally represented by Si(OR) 4 (R=alkyl group). This substance is mixed with alcohol, methyl acetate, ethyl acetate, acetone, xylene, hydrochloric acid, sulfuric acid, acetic acid, formic vinegar, etc. as a solvent, and used as a treatment solution for thorough cleaning such as alkaline cleaning, acid cleaning, and pure water cleaning. Brush coating on a glass substrate, spinner rotation method, spray spray method, immersion constant speed pulling method,
Apply by any method such as offset printing method,
Pre-baking at a temperature of about 150°C to 200°C will result in a slightly stronger film. Further, the film is fired at a high temperature of 400°C or higher to obtain a highly effective (hereinafter referred to as high quality) SiO 2 film for preventing the elution of impurities. A liquid crystal display panel assembled using a glass substrate treated with this process can have a quality that is almost the same as or higher than that of a conventionally treated glass substrate. In addition, pure SiO 2 obtained by the treatment method described above
In order to improve the quality of the film, a treatment solution is prepared by adding elemental phosphorus in the form of an inorganic acid in an appropriate proportion to the treatment solution, and then the panel is formed using one of the methods described above. After applying the treatment solution to a glass substrate for use in the manufacturing process, pre-baking and high-temperature baking are performed to remove the added substances.
Obtain a SiO2 film. The liquid crystal display panel whose panel cells are assembled using this treated glass substrate is a pure liquid crystal display panel.
A panel with a longer lifespan can be obtained than with SiO 2 film overcoat treatment. This is because a high quality film was obtained by adding the above substance to the SiO 2 film. The amount added is 1% to 10% relative to SiO 2 .
is preferable; if it is more or less than that, the effect will be diminished. In particular, if the content exceeds 10%, there is a disadvantage that the substance dissolves into the liquid crystal composition, causing alignment disorder. If it is less than 1%, the amount of the substance added will be too small and the results will be similar to conventional results. As described above, according to the present invention, additives can be added extremely easily compared to conventional SiO 2 coating methods (e.g., sputter deposition method, vacuum deposition method, etc.), and the ratio of additives can also be reduced. It can be controlled freely. Regarding the film thickness, the thicker the film, the better the long life, but from 500Å.
A range of 3000 Å is best. In the method of the present invention, once the conditions for applying the glass treatment liquid are determined, pre-firing and high-temperature firing can be performed in an electric furnace, and detailed process control is not required. Alternatively, a belt furnace would suffice, eliminating the need for large capital investment, and mass production being incomparably greater than conventional methods, making it possible to greatly streamline the process overall. Next, the present invention will be specifically explained with reference to Examples. The table below shows a comparison of the characteristics of the conventional silicon resin coated with organic solution and fired and the phosphorus-added silicon resin of the present invention.
本発明の、ケイ素のオーガニツクソリユージヨ
ンに、リンの元素を無機酸の形でSiO2に対して
１％〜10％の割合で添加して調合した処理液を用
いてSiO2＋添加物含有膜でコートし、膜厚が500
〜3000Åであつて、前記処理液の塗布方法として
削毛塗りスピンナー振り切り法、スプレー吹付
法、浸漬等引き上げ法、オフセツト印刷法によつ
たため、極めて良質のかつ均一な膜が形成できた
ため、従来の方法では全く得られなかつた、液晶
パネル基板から液晶組成物への不純物の溶出が完
全に押えられ、極めて長寿命で信頼性の高い液晶
パネルを安価に製造することができる格別な効果
を奏することができた。
Using a treatment solution prepared by adding phosphorus element in the form of an inorganic acid to the silicon organic solution of the present invention at a ratio of 1% to 10% relative to SiO 2 , SiO 2 + additives are added. Coated with film, film thickness is 500
~3000 Å, and the application method of the treatment liquid was the hair-shaving spinner shake-off method, spray spraying method, dipping method, etc., and offset printing method, which made it possible to form an extremely high-quality and uniform film, which was different from conventional methods. The elution of impurities from the liquid crystal panel substrate into the liquid crystal composition is completely suppressed, which could not be achieved with the method described above, and an exceptional effect is achieved in that a liquid crystal panel with an extremely long life and high reliability can be manufactured at a low cost. I was able to do that.
第１図は従来の液晶表示パネル断面図を示す。
第２図はSiO2膜によるオーバーコート処理した
液晶表示パネル断面図を示す。
１……ガラス基板、２……ネサ（透明電極）、
３……液晶組成物、４……SiO2にリンの添加さ
れた膜、５……偏光子、６……反射板。
FIG. 1 shows a sectional view of a conventional liquid crystal display panel.
FIG. 2 shows a cross-sectional view of a liquid crystal display panel overcoated with a SiO 2 film. 1...Glass substrate, 2...NESA (transparent electrode),
3...Liquid crystal composition, 4...SiO 2 film with phosphorus added, 5...Polarizer, 6...Reflector.
Claims (1)
ルに液晶組成物をツイスト配向させて封入し液晶
の電気的光学的特性を利用して表示を行なう液晶
表示パネルの製造方法において、前記セルの上下
対向させたセル基板の表面を、ケイ素のオーガニ
ツクソリユージヨン｛一般式；Si（OR）4、Ｒ；ア
ルキル基｝に、リンの元素を無機酸の形で前記リ
ンをSiO2に対して１％〜10％の割合で添加して
調合した処理液を用いて、SiO2＋添加物含有膜
でコートし、該コートした膜厚が500〜3000Åで
あつて、前記処理液の塗布方法として、刷毛塗り
スピンナー振り切り法、スプレー吹付け法、浸漬
等速引き上げ法、オフセツト印刷法によることを
特徴とする液晶パネルの製造方法。1. In a method for manufacturing a liquid crystal display panel, in which a liquid crystal composition is sealed in a twisted orientation in a glass cell formed by vertically facing transparent electrodes, and display is performed using the electro-optical characteristics of the liquid crystal, the vertically facing cells are The surface of the cell substrate was treated with silicon organic solution {general formula: Si(OR) 4 , R: alkyl group}, and the phosphorus element was added in the form of an inorganic acid at 1% based on SiO 2 . Using a treatment liquid prepared by adding ~10%, a SiO 2 + additive-containing film is coated, and the coated film thickness is 500 to 3000 Å, and the treatment liquid is applied using a brush. A method for manufacturing a liquid crystal panel, characterized by using a coating spinner swing-off method, a spraying method, a dipping constant velocity pulling method, and an offset printing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1944178A JPS54112658A (en) | 1978-02-22 | 1978-02-22 | Liquid crystal display panel and production of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1944178A JPS54112658A (en) | 1978-02-22 | 1978-02-22 | Liquid crystal display panel and production of the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28238089A Division JPH02181117A (en) | 1989-10-30 | 1989-10-30 | Production of liquid crystal panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54112658A JPS54112658A (en) | 1979-09-03 |
| JPS644162B2 true JPS644162B2 (en) | 1989-01-24 |
Family
ID=11999379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1944178A Granted JPS54112658A (en) | 1978-02-22 | 1978-02-22 | Liquid crystal display panel and production of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54112658A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3001125A1 (en) * | 1980-01-14 | 1981-07-16 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING A LIQUID CRYSTAL DISPLAY |
| JPS5738413A (en) * | 1980-08-20 | 1982-03-03 | Seiko Epson Corp | Substrate for liquid crystal panel |
| JPS57191219A (en) * | 1981-05-20 | 1982-11-25 | Tokyo Denshi Kagaku Kabushiki | Formation of silica coating pattern |
| JPH0612384B2 (en) * | 1982-05-17 | 1994-02-16 | アルプス電気株式会社 | Liquid crystal display element manufacturing method |
| US4643531A (en) * | 1984-02-15 | 1987-02-17 | Canon Kabushiki Kaisha | Liquid crystal panel having an organic indium and/or organic zirconium orientation film |
| DE4325124C2 (en) * | 1993-07-27 | 1996-06-13 | Bayerische Motoren Werke Ag | Mirrors, in particular vehicle rear view mirrors |
-
1978
- 1978-02-22 JP JP1944178A patent/JPS54112658A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54112658A (en) | 1979-09-03 |
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